AU2001252928A1 - An enhanced resist strip in a dielectric etcher using downstream plasma - Google Patents

An enhanced resist strip in a dielectric etcher using downstream plasma

Info

Publication number
AU2001252928A1
AU2001252928A1 AU2001252928A AU5292801A AU2001252928A1 AU 2001252928 A1 AU2001252928 A1 AU 2001252928A1 AU 2001252928 A AU2001252928 A AU 2001252928A AU 5292801 A AU5292801 A AU 5292801A AU 2001252928 A1 AU2001252928 A1 AU 2001252928A1
Authority
AU
Australia
Prior art keywords
etch
etch chamber
dielectric
downstream plasma
resist strip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001252928A
Inventor
Jeffrey Marks
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of AU2001252928A1 publication Critical patent/AU2001252928A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3342—Resist stripping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

A method and apparatus for performing a dielectric etch, etch mask stripping, and etch chamber clean. A wafer is placed in an etch chamber. A dielectric etch is performed on the wafer using an in situ plasma generated by an in situ plasma device in the etch chamber. The etch mask is stripped using a remote plasma generated in a remote plasma device connected to the etch chamber. The wafer is removed from the etch chamber and either the in situ plasma or the remote plasma may be used to clean the etch chamber. In etch chambers that do not use confinement rings, a heater may be used to heat the etch chamber wall to provide improved cleaning.
AU2001252928A 2000-03-30 2001-03-16 An enhanced resist strip in a dielectric etcher using downstream plasma Abandoned AU2001252928A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09539294 2000-03-30
US09/539,294 US6362110B1 (en) 2000-03-30 2000-03-30 Enhanced resist strip in a dielectric etcher using downstream plasma
PCT/US2001/008668 WO2001075932A2 (en) 2000-03-30 2001-03-16 An enhanced resist strip in a dielectric etcher using downstream plasma

Publications (1)

Publication Number Publication Date
AU2001252928A1 true AU2001252928A1 (en) 2001-10-15

Family

ID=24150619

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001252928A Abandoned AU2001252928A1 (en) 2000-03-30 2001-03-16 An enhanced resist strip in a dielectric etcher using downstream plasma

Country Status (11)

Country Link
US (2) US6362110B1 (en)
EP (1) EP1269514B1 (en)
JP (1) JP4860087B2 (en)
KR (1) KR100787019B1 (en)
CN (1) CN1282986C (en)
AT (1) ATE362647T1 (en)
AU (1) AU2001252928A1 (en)
DE (1) DE60128460T2 (en)
RU (1) RU2279732C2 (en)
TW (1) TW516069B (en)
WO (1) WO2001075932A2 (en)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6902629B2 (en) * 2002-04-12 2005-06-07 Applied Materials, Inc. Method for cleaning a process chamber
US7588036B2 (en) * 2002-07-01 2009-09-15 Applied Materials, Inc. Chamber clean method using remote and in situ plasma cleaning systems
US20070051471A1 (en) * 2002-10-04 2007-03-08 Applied Materials, Inc. Methods and apparatus for stripping
US7097716B2 (en) * 2002-10-17 2006-08-29 Applied Materials, Inc. Method for performing fluorocarbon chamber cleaning to eliminate fluorine memory effect
KR100542740B1 (en) * 2002-11-11 2006-01-11 삼성전자주식회사 Method and apparatus for generating a gas plasma, gas compostion for generating a plasma and method for semiconductor processing using the same
US6923189B2 (en) * 2003-01-16 2005-08-02 Applied Materials, Inc. Cleaning of CVD chambers using remote source with cxfyoz based chemistry
US7140374B2 (en) * 2003-03-14 2006-11-28 Lam Research Corporation System, method and apparatus for self-cleaning dry etch
US7037376B2 (en) 2003-04-11 2006-05-02 Applied Materials Inc. Backflush chamber clean
US7144521B2 (en) * 2003-08-22 2006-12-05 Lam Research Corporation High aspect ratio etch using modulation of RF powers of various frequencies
US7053994B2 (en) * 2003-10-28 2006-05-30 Lam Research Corporation Method and apparatus for etch endpoint detection
US7211518B2 (en) * 2004-04-19 2007-05-01 Lam Research Corporation Waferless automatic cleaning after barrier removal
US20050279453A1 (en) * 2004-06-17 2005-12-22 Uvtech Systems, Inc. System and methods for surface cleaning
US20050284573A1 (en) * 2004-06-24 2005-12-29 Egley Fred D Bare aluminum baffles for resist stripping chambers
US20060051965A1 (en) * 2004-09-07 2006-03-09 Lam Research Corporation Methods of etching photoresist on substrates
US7430986B2 (en) 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
US20060228889A1 (en) * 2005-03-31 2006-10-12 Edelberg Erik A Methods of removing resist from substrates in resist stripping chambers
US20060266288A1 (en) * 2005-05-27 2006-11-30 Applied Materials, Inc. High plasma utilization for remote plasma clean
US7479457B2 (en) * 2005-09-08 2009-01-20 Lam Research Corporation Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof
US8317929B2 (en) * 2005-09-16 2012-11-27 Asml Netherlands B.V. Lithographic apparatus comprising an electrical discharge generator and method for cleaning an element of a lithographic apparatus
US7695567B2 (en) * 2006-02-10 2010-04-13 Applied Materials, Inc. Water vapor passivation of a wall facing a plasma
US20070254112A1 (en) * 2006-04-26 2007-11-01 Applied Materials, Inc. Apparatus and method for high utilization of process chambers of a cluster system through staggered plasma cleaning
US7605063B2 (en) * 2006-05-10 2009-10-20 Lam Research Corporation Photoresist stripping chamber and methods of etching photoresist on substrates
US20070266946A1 (en) * 2006-05-22 2007-11-22 Byung-Chul Choi Semiconductor device manufacturing apparatus and method of using the same
US7740736B2 (en) * 2006-06-08 2010-06-22 Lam Research Corporation Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber
US7879184B2 (en) * 2006-06-20 2011-02-01 Lam Research Corporation Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts
US7789965B2 (en) * 2006-09-19 2010-09-07 Asm Japan K.K. Method of cleaning UV irradiation chamber
US8043430B2 (en) * 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
US8283255B2 (en) * 2007-05-24 2012-10-09 Lam Research Corporation In-situ photoresist strip during plasma etching of active hard mask
KR101423554B1 (en) 2007-07-31 2014-07-25 (주)소슬 Plasma etching equipment and method of etching a wafer using the same
KR101372356B1 (en) * 2007-07-11 2014-03-12 (주)소슬 Method for plasma-treatment
CN101889329B (en) * 2007-10-31 2012-07-04 朗姆研究公司 High lifetime consumable silicon nitride-silicon dioxide plasma processing components
CN102089848B (en) * 2008-07-09 2013-05-22 欧瑞康太阳能股份公司(特吕巴赫) Remote plasma cleaning method and apparatus for applying said method
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
JP5794988B2 (en) * 2009-08-31 2015-10-14 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ Local plasma confinement and pressure control arrangement and method
JP2010080986A (en) * 2010-01-14 2010-04-08 Canon Anelva Corp Insulation film etching apparatus
CN104550132B (en) * 2013-10-29 2016-12-07 中芯国际集成电路制造(上海)有限公司 The conforming control method of critical size after superdeep holes plasma etching industrial
US9870932B1 (en) * 2016-07-27 2018-01-16 Lam Research Corporation Pressure purge etch method for etching complex 3-D structures
CN111586957B (en) * 2019-02-19 2021-05-04 大连理工大学 Capacitive coupling plasma discharge device

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6240728A (en) * 1985-08-15 1987-02-21 Tokuda Seisakusho Ltd Dry etching device
JP2555062B2 (en) * 1987-04-10 1996-11-20 株式会社日立製作所 Plasma processing device
US4857140A (en) * 1987-07-16 1989-08-15 Texas Instruments Incorporated Method for etching silicon nitride
US4836905A (en) * 1987-07-16 1989-06-06 Texas Instruments Incorporated Processing apparatus
JP2646811B2 (en) * 1990-07-13 1997-08-27 ソニー株式会社 Dry etching method
JPH05243167A (en) * 1992-02-28 1993-09-21 Sony Corp Manufacture of semiconductor device
US5662770A (en) * 1993-04-16 1997-09-02 Micron Technology, Inc. Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks
US5798016A (en) * 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
US5589041A (en) * 1995-06-07 1996-12-31 Sony Corporation Plasma sputter etching system with reduced particle contamination
US5534751A (en) * 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
JPH0936103A (en) * 1995-07-18 1997-02-07 Ulvac Japan Ltd Etching of semiconductor wafer and resist removing method and device
US5788799A (en) * 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
US6170428B1 (en) * 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
US6109206A (en) * 1997-05-29 2000-08-29 Applied Materials, Inc. Remote plasma source for chamber cleaning
US5849639A (en) * 1997-11-26 1998-12-15 Lucent Technologies Inc. Method for removing etching residues and contaminants
JP2002503031A (en) * 1998-02-09 2002-01-29 アプライド マテリアルズ インコーポレイテッド Plasma-assisted processing chamber for individually controlling seed density
JP3218348B2 (en) * 1998-05-21 2001-10-15 株式会社アルバック Plasma ashing method
US6014979A (en) * 1998-06-22 2000-01-18 Applied Materials, Inc. Localizing cleaning plasma for semiconductor processing
US6211092B1 (en) * 1998-07-09 2001-04-03 Applied Materials, Inc. Counterbore dielectric plasma etch process particularly useful for dual damascene
JP2000030896A (en) * 1998-07-10 2000-01-28 Anelva Corp Plasma confining device
US6168726B1 (en) * 1998-11-25 2001-01-02 Applied Materials, Inc. Etching an oxidized organo-silane film

Also Published As

Publication number Publication date
KR20020093869A (en) 2002-12-16
DE60128460D1 (en) 2007-06-28
WO2001075932A2 (en) 2001-10-11
EP1269514B1 (en) 2007-05-16
DE60128460T2 (en) 2008-01-17
US20020052114A1 (en) 2002-05-02
CN1282986C (en) 2006-11-01
RU2002126255A (en) 2004-03-27
JP2003529928A (en) 2003-10-07
KR100787019B1 (en) 2007-12-18
US6362110B1 (en) 2002-03-26
ATE362647T1 (en) 2007-06-15
EP1269514A2 (en) 2003-01-02
RU2279732C2 (en) 2006-07-10
JP4860087B2 (en) 2012-01-25
TW516069B (en) 2003-01-01
CN1432190A (en) 2003-07-23
WO2001075932A3 (en) 2002-03-14

Similar Documents

Publication Publication Date Title
AU2001252928A1 (en) An enhanced resist strip in a dielectric etcher using downstream plasma
TW200625440A (en) Wafer bevel polymer removal
EP0849377A3 (en) Etching titanium nitride in a plasma containing oxygen and flourine
MXPA05010234A (en) Method and system for xenon fluoride etching with enhanced efficiency.
TW370691B (en) Method for removing photoresist and plasma etch residues
WO2002023611A3 (en) Integration of silicon etch and chamber cleaning processes
TW200802603A (en) Method for removing damaged dielectric material
AU2003262408A1 (en) Method for removing photoresist and etch residues
TW200641991A (en) Methods for silicon electrode assembly etch rate and etch uniformity recovery
TW200717647A (en) Process and system for etching doped silicon using SF6-based chemistry
AU2003262407A1 (en) Method for removing photoresist and etch residues
JPS5747876A (en) Plasma etching apparatus and method
TW200723395A (en) Method for forming a semiconductor device including a plasma ashing treatment for removal of photoresist
EP1090413A4 (en) Method of forming high aspect ratio apertures
TW200619873A (en) Method for stripping photoresist from etched wafer
WO2007076280A3 (en) Side-specific treatment of textiles using plasmas
TW200502718A (en) Methods of removing photoresist from substrates
TW200643611A (en) Etch with photoresist mask
DE60042246D1 (en) IN-SITU RENEWAL PROCESS FOR REMOVING PHO
TW343360B (en) Plasma reactor process for high photoresist selectivity and improved polymer adhesion
JP2000357683A5 (en)
JPS5587438A (en) Manufacture of semiconductor device
WO2001047009A3 (en) Method and apparatus for detecting the endpoint of a photoresist stripping process
KR970000198B1 (en) Process for anisotropically etching semiconductor material
DE50104659D1 (en) Method for analyzing the power loss of an electrical circuit