CN104550132B - The conforming control method of critical size after superdeep holes plasma etching industrial - Google Patents
The conforming control method of critical size after superdeep holes plasma etching industrial Download PDFInfo
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- CN104550132B CN104550132B CN201310522892.7A CN201310522892A CN104550132B CN 104550132 B CN104550132 B CN 104550132B CN 201310522892 A CN201310522892 A CN 201310522892A CN 104550132 B CN104550132 B CN 104550132B
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- plasma etching
- reaction chamber
- superdeep holes
- critical size
- mixed gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
Abstract
The invention provides the conforming control method of critical size after a kind of superdeep holes plasma etching industrial, after described superdeep holes plasma etching industrial, the conforming control method of critical size includes: be passed through mixed gas in the reaction chamber after superdeep holes plasma etching industrial, and described mixed gas includes: nitrogen, hydrogen and fluoro-gas；The reaction chamber being passed through mixed gas is performed plasma process.By being passed through mixed gas in the reaction chamber after superdeep holes plasma etching industrial, described mixed gas includes: nitrogen, hydrogen and fluoro-gas；The reaction chamber being passed through mixed gas is performed plasma process so that the metal copper layer accumulated in reaction chamber wall is eliminated.Thus the problem avoiding/alleviate the oxide layer etch rate after superdeep holes plasma etching industrial to drift about, improve superdeep holes plasma etching batch production technique critical size concordance, and the concordance of the IC-components formed.
Description
Technical field
The present invention relates to integrated circuit manufacturing equipment technical field, after a kind of superdeep holes plasma etching industrial
The conforming control method of critical size.
Background technology
Along with in semi-conductor industry, the size of integrated circuit constantly reduces, for the plasma etching of IC manufacturing
For technique, the stability of the etching between sheet becomes a main Consideration.And plasma etching equipment reaction chamber
In deposition byproduct of reaction by be the drift to technique (such as: etch rate, the pattern of etching, the selectivity of etching and
The uniformity etc. of etching) produce a factor of extremely important impact.Concrete, along with the etching of wafer can be carved at plasma
The deposition of some byproducts of reaction is formed on erosion equipment reaction chamber wall.The byproduct of reaction of this deposition is follow-up etched
Cheng Zhong, can release and wafer below etches other gases influential, or by reaction consume needed for normally etching anti-
Answering gas, this is the most disadvantageous for the stability of technique.
After existing superdeep holes (UTV) plasma etching industrial, frequently can lead to the instability of subsequent technique, especially
, cause oxide layer etch rate to drift about.But, in existing technique, after superdeep holes (UTV) plasma etching industrial,
Dielectric layer reactant clear operation will be done by article on plasma etching apparatus reaction chamber.Thus, carve at superdeep holes (UTV) plasma
Oxide layer etch rate drifting problem after etching technique has perplexed those skilled in the art.
Summary of the invention
It is an object of the invention to provide the conforming controlling party of critical size after a kind of superdeep holes plasma etching industrial
Method, to solve in prior art, asking of the oxide layer etch rate drift after superdeep holes (UTV) plasma etching industrial
Topic.
For solving above-mentioned technical problem, the present invention provides critical size concordance after a kind of superdeep holes plasma etching industrial
Control method, after described superdeep holes plasma etching industrial, the conforming control method of critical size includes: at superdeep holes etc.
Being passed through mixed gas in reaction chamber after ion etch process, described mixed gas includes: nitrogen, hydrogen and containing fluorine gas
Body；The reaction chamber being passed through mixed gas is performed plasma process.
Optionally, after described superdeep holes plasma etching industrial in the conforming control method of critical size, described
Mixed gas also includes oxygen.
Optionally, after described superdeep holes plasma etching industrial in the conforming control method of critical size, described
Fluoro-gas includes CF4Or CHF3In one or more.
Optionally, after described superdeep holes plasma etching industrial in the conforming control method of critical size, instead
Answer before chamber is passed through mixed gas, the bottom electrode in reaction chamber is placed the wafer of barrier effect together.
Optionally, after described superdeep holes plasma etching industrial in the conforming control method of critical size, to logical
After entering the reaction chamber execution plasma process of mixed gas, described reaction chamber occurs react as follows: nitrogen and hydrogen
Layers of copper on gas reduction reaction chamber wall；The copper ion that fluoro-gas obtains with reduction reacts, and formation carries copper ion
Gas.
Optionally, after described superdeep holes plasma etching industrial in the conforming control method of critical size, carry
The gas having copper ion excludes reaction chamber as waste gas.
Optionally, after described superdeep holes plasma etching industrial in the conforming control method of critical size, described
The process conditions of plasma process are:
Pressure: 20mTorr～200mTorr；
Temperature: 20 DEG C～70 DEG C.
Optionally, after described superdeep holes plasma etching industrial in the conforming control method of critical size, described
The flow of nitrogen is 20sccm～1000sccm；The flow of described hydrogen is 20sccm～1000sccm；Described fluoro-gas
Flow is 20sccm～2000sccm.
Optionally, after described superdeep holes plasma etching industrial in the conforming control method of critical size, to logical
The process time of the reaction chamber execution plasma process entering mixed gas is 30 seconds～10 minutes.
Inventor studies discovery, causes oxide layer etch rate to drift about after superdeep holes (UTV) plasma etching industrial
Reason be: in superdeep holes (UTV) plasma etching industrial, except dielectric layer reactant can be caused to accumulate in reaction chamber
Outside on wall；Superdeep holes (UTV) plasma etching industrial also can take some copper ions out of, causes copper ion to accumulate in reaction chamber
On wall, form a metal copper layer.Therefore, article on plasma etching apparatus reaction chamber is the most only taked to do dielectric layer
Reactant clear operation is inadequate, and it will cause the oxide layer after superdeep holes (UTV) plasma etching industrial to etch
Rate drift.
It is former that inventor causes after have found superdeep holes (UTV) plasma etching industrial that oxide layer etch rate drifts about
Because of afterwards, the conforming control method of critical size after the superdeep holes plasma etching industrial of the present invention is proposed, by ultra-deep
Being passed through mixed gas in reaction chamber after the plasma etching industrial of hole, described mixed gas includes: nitrogen, hydrogen and fluorine-containing
Gas；The reaction chamber being passed through mixed gas is performed plasma process so that accumulate in the metallic copper in reaction chamber wall
Layer is eliminated.Thus avoid/alleviate the oxide layer etch rate after superdeep holes (UTV) plasma etching industrial to drift about
Problem, improves superdeep holes plasma etching batch production technique critical size concordance, and the IC-components formed
Concordance.
Accompanying drawing explanation
Fig. 1 be the embodiment of the present invention superdeep holes plasma etching industrial after the mistake of the conforming control method of critical size
Journey schematic diagram.
Detailed description of the invention
Below in conjunction with critical size after the superdeep holes plasma etching industrial that the present invention is proposed by the drawings and specific embodiments
Conforming control method is described in further detail.According to following explanation and claims, advantages and features of the invention
Will be apparent from.It should be noted that, accompanying drawing all uses the form simplified very much and all uses non-ratio accurately, only in order to convenient,
Aid in illustrating the purpose of the embodiment of the present invention lucidly.
Inventor studies discovery, causes oxide layer etch rate to drift about after superdeep holes (UTV) plasma etching industrial
Reason be: in superdeep holes (UTV) plasma etching industrial, except dielectric layer reactant can be caused to accumulate in reaction chamber
Outside on wall；Superdeep holes (UTV) plasma etching industrial also can take some copper ions out of, causes copper ion to accumulate in reaction chamber
On wall, form a metal copper layer.Therefore, article on plasma etching apparatus reaction chamber is the most only taked to do dielectric layer
Reactant clear operation is inadequate, and it will cause the oxide layer after superdeep holes (UTV) plasma etching industrial to etch
Rate drift.
Therefore, the core concept of the present invention is, by the reaction chamber after superdeep holes plasma etching industrial
Being passed through mixed gas, described mixed gas includes: nitrogen, hydrogen and fluoro-gas；The reaction chamber being passed through mixed gas is held
Row plasma process so that the metal copper layer accumulated in reaction chamber wall is eliminated.Thus avoid/alleviate at superdeep holes
(UTV) problem of the oxide layer etch rate drift after plasma etching industrial, improves superdeep holes plasma etching volume production
Technology key dimensional uniformity, and the concordance of the IC-components formed.
Concrete, after described superdeep holes plasma etching industrial, the conforming control method of critical size includes: in ultra-deep
Being passed through mixed gas in reaction chamber after the plasma etching industrial of hole, described mixed gas includes: nitrogen, hydrogen and fluorine-containing
Gas；The reaction chamber being passed through mixed gas is performed plasma process.
Refer to Fig. 1, its be the embodiment of the present invention superdeep holes plasma etching industrial after the conforming control of critical size
The process schematic of method processed.As it is shown in figure 1, accumulate layer of metal layers of copper in the reaction chamber wall 11 of reaction chamber 10
20.By plasma process, the mixed gas being passed through 30 dozens is to metal copper layer 20, and takes copper ion out of.Concrete, to being passed through
After the reaction chamber 10 of mixed gas 30 performs plasma process, described reaction chamber 10 occurs react as follows: nitrogen
With the layers of copper 20 in hydrogen reducing reaction chamber wall；The copper ion that fluoro-gas obtains with reduction reacts, and formation carries copper
The gas 31 of ion.Then, the gas 31 carrying copper ion can exclude reaction chamber 10 as waste gas.
In the present embodiment, described mixed gas 30 also includes oxygen, the effect phase of described oxygen and described fluoro-gas
Seemingly, the copper ion mainly obtained with reduction reacts, and forms the gas 31 carrying copper ion.Further, described
Fluoro-gas includes CF4Or CHF3In one or more.
Please continue to refer to Fig. 1, in the present embodiment, before reaction chamber 10 is passed through mixed gas 30, at reaction chamber
The wafer (not shown in figure 1) of barrier effect together is placed on bottom electrode 12 in room 10.Here, by reaction chamber 10
Bottom electrode 12 on place the wafer of barrier effect together, described bottom electrode 12 can be protected, prevent being passed through mixed gas 30
When reaction chamber 10 performs plasma process, the plasma the formed injury to bottom electrode 12, also can avoid anti-simultaneously
The accumulation on chamber wall 11 is answered to splash on bottom electrode 12.
In the present embodiment, the process conditions of described plasma process are: pressure: 20mTorr～200mTorr；Temperature
Degree: 20 DEG C～70 DEG C.Such as, pressure be 20mTorr, 30mTorr, 50mTorr, 70mTorr, 85mTorr, 100mTorr,
120mTorr, 135mTorr, 150mTorr, 165mTorr, 180mTorr or 200mTorr etc.；Temperature is 20 DEG C, 25 DEG C, 30
DEG C, 40 DEG C, 50 DEG C, 55 DEG C, 60 DEG C or 70 DEG C etc..Preferably, the size of described pressure and temperature identical with subsequent technique or
Close, thus it is easy to the realization of subsequent technique.
Further, the flow of described nitrogen is 20sccm～1000sccm；The flow of described hydrogen be 20sccm～
1000sccm；The flow of described fluoro-gas is 20sccm～2000sccm.Such as, the flow of nitrogen be 20sccm, 30sccm,
50sccm、70sccm、100sccm、150sccm、200sccm、300sccm、500sccm、650sccm、75sccm、900sccm
Or 1000sccm etc.；The flow of described hydrogen is 20sccm, 30sccm, 50sccm, 70sccm, 100sccm, 150sccm,
200sccm, 300sccm, 500sccm, 650sccm, 75sccm, 900sccm or 1000sccm etc.；The stream of described fluoro-gas
Amount for 20sccm, 50sccm, 70sccm, 100sccm, 150sccm, 200sccm, 300sccm, 500sccm, 650sccm,
75sccm, 900sccm, 1100sccm, 1250sccm, 1400sccm, 1600sccm, 1800sccm or 2000sccm etc..
Under above-mentioned process conditions, the process time that the reaction chamber being passed through mixed gas performs plasma process is excellent
Elect as 30 seconds～10 minutes, thus can either ensure the removal degree to metal copper layer, can avoid process efficiency again as far as possible
Reduction, obtain a relative balance.
In sum, by the reaction chamber after superdeep holes plasma etching industrial is passed through mixed gas, described
Mixed gas includes: nitrogen, hydrogen and fluoro-gas；The reaction chamber being passed through mixed gas is performed plasma process, makes
The metal copper layer that must accumulate in reaction chamber wall is eliminated.Thus avoid/alleviate in superdeep holes (UTV) plasma etching work
The problem of the oxide layer etch rate drift after skill, improves superdeep holes plasma etching batch production technique critical size consistent
Property, and the concordance of the IC-components formed.
Additionally, inventor has also done performs critical size concordance after the superdeep holes plasma etching industrial that the present invention provides
Control method be not carried out the present invention provide superdeep holes plasma etching industrial after the conforming control method of critical size
The contrast test that affects on the drift of subsequent oxidation layer etch rate, result of the test discovery, perform the superdeep holes that the present invention provides
After plasma etching industrial after the conforming control method of critical size subsequent oxidation layer etch rate drift degree compared to
It is not carried out the subsequent oxidation layer of the conforming control method of critical size after the superdeep holes plasma etching industrial that the present invention provides
Etch rate drift degree to alleviate 30%～70%.
Foregoing description is only the description to present pre-ferred embodiments, not any restriction to the scope of the invention, this
Any change that the those of ordinary skill in bright field does according to the disclosure above content, modification, belong to the protection of claims
Scope.
Claims (8)
1. the conforming control method of critical size after a superdeep holes plasma etching industrial, it is characterised in that including: super
Being passed through mixed gas in reaction chamber after deep hole plasma etching technics, described mixed gas includes: nitrogen, hydrogen and contain
Fluorine gas；The reaction chamber being passed through mixed gas is performed plasma process；Wherein, to the reaction chamber being passed through mixed gas
After performing plasma process, described reaction chamber occurs following reaction: on nitrogen and hydrogen reducing reaction chamber wall
Layers of copper；The copper ion that fluoro-gas obtains with reduction reacts, and forms the gas carrying copper ion.
2. the conforming control method of critical size after superdeep holes plasma etching industrial as claimed in claim 1, its feature
Being, described mixed gas also includes oxygen.
3. the conforming control method of critical size after superdeep holes plasma etching industrial as claimed in claim 1, its feature
Being, described fluoro-gas includes CF4Or CHF3In one or more.
4. the conforming control method of critical size after superdeep holes plasma etching industrial as claimed in claim 1, its feature
It is, before being passed through mixed gas in reaction chamber, the bottom electrode in reaction chamber is placed the crystalline substance of barrier effect together
Circle.
5. the conforming control method of critical size after superdeep holes plasma etching industrial as claimed in claim 1, its feature
Being, the gas carrying copper ion excludes reaction chamber as waste gas.
6. the conforming control of critical size after the superdeep holes plasma etching industrial as according to any one of Claims 1 to 4
Method, it is characterised in that the process conditions of described plasma process are:
Pressure: 20mTorr～200mTorr；
Temperature: 20 DEG C～70 DEG C.
7. the conforming control method of critical size after superdeep holes plasma etching industrial as claimed in claim 6, its feature
Being, the flow of described nitrogen is 20sccm～1000sccm；The flow of described hydrogen is 20sccm～1000sccm；Described contain
The flow of fluorine gas is 20sccm～2000sccm.
8. the conforming control method of critical size after superdeep holes plasma etching industrial as claimed in claim 7, its feature
Being, the process time that the reaction chamber being passed through mixed gas performs plasma process is 30 seconds～10 minutes.
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| JPH08319586A (en) * | 1995-05-24 | 1996-12-03 | Nec Yamagata Ltd | Method for cleaning vacuum treating device |
| US6379574B1 (en) * | 1999-05-03 | 2002-04-30 | Applied Materials, Inc. | Integrated post-etch treatment for a dielectric etch process |
| US6362110B1 (en) * | 2000-03-30 | 2002-03-26 | Lam Research Corporation | Enhanced resist strip in a dielectric etcher using downstream plasma |
| US20050258137A1 (en) * | 2004-03-24 | 2005-11-24 | Sawin Herbert H | Remote chamber methods for removing surface deposits |
| CN100392821C (en) * | 2004-11-08 | 2008-06-04 | 联华电子股份有限公司 | Process for removing etching residue polymer |
| KR101536174B1 (en) * | 2014-02-11 | 2015-07-14 | 연세대학교 산학협력단 | Method of manufacturing semiconductor device capable of suppressing oxygen diffusion |
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