JPS5561021A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5561021A
JPS5561021A JP13414078A JP13414078A JPS5561021A JP S5561021 A JPS5561021 A JP S5561021A JP 13414078 A JP13414078 A JP 13414078A JP 13414078 A JP13414078 A JP 13414078A JP S5561021 A JPS5561021 A JP S5561021A
Authority
JP
Japan
Prior art keywords
wafer
reaction pipe
furnace
uniformly
arrow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13414078A
Other languages
Japanese (ja)
Other versions
JPS584811B2 (en
Inventor
Yoshiyuki Shibamata
Hideo Onodera
Tadashi Kirisako
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP53134140A priority Critical patent/JPS584811B2/en
Priority to DE7979302378T priority patent/DE2965631D1/en
Priority to EP79302378A priority patent/EP0010952B1/en
Publication of JPS5561021A publication Critical patent/JPS5561021A/en
Priority to US06/378,261 priority patent/US4449037A/en
Publication of JPS584811B2 publication Critical patent/JPS584811B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber

Abstract

PURPOSE: To prevent the scattering from occurring in diffusion resistance as well as film thickness by heat-treating a semiconductor wafer while moving a reaction pipe or heating furnace in an axial direction.
CONSTITUTION: A semiconductor wafer 3 mounted on a wafer holder 2 is inserted into a reaction pipe where it is kept uniformly at the specified temperature. After moving a heating furnace 4 in the direction of an arrow to the location of the wafer 3, each wafer is uniformly heated at a sufficiently higher temperature than the initial one on which condition the processes required such as impurity diffusion and film formation, etc are made. After the desired length of time, the furnace 4 is moved again in the direction of an arrow from the location of the reaction pipe 1. The reaction pipe 1 instead of the furnace 4 may be moved in that direction. On doing this, time required for heating the wafer can uniformly be controlled.
COPYRIGHT: (C)1980,JPO&Japio
JP53134140A 1978-10-31 1978-10-31 Manufacturing method of semiconductor device Expired JPS584811B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP53134140A JPS584811B2 (en) 1978-10-31 1978-10-31 Manufacturing method of semiconductor device
DE7979302378T DE2965631D1 (en) 1978-10-31 1979-10-30 Method and apparatus for heating semiconductor wafers
EP79302378A EP0010952B1 (en) 1978-10-31 1979-10-30 Method and apparatus for heating semiconductor wafers
US06/378,261 US4449037A (en) 1978-10-31 1982-05-14 Method and apparatus for heating semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53134140A JPS584811B2 (en) 1978-10-31 1978-10-31 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5561021A true JPS5561021A (en) 1980-05-08
JPS584811B2 JPS584811B2 (en) 1983-01-27

Family

ID=15121400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53134140A Expired JPS584811B2 (en) 1978-10-31 1978-10-31 Manufacturing method of semiconductor device

Country Status (4)

Country Link
US (1) US4449037A (en)
EP (1) EP0010952B1 (en)
JP (1) JPS584811B2 (en)
DE (1) DE2965631D1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62271420A (en) * 1987-01-16 1987-11-25 Sony Corp Treatment equipment for semiconductor substrate

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59193024A (en) * 1983-03-29 1984-11-01 Ushio Inc Flash irradiation device
US4573431A (en) * 1983-11-16 1986-03-04 Btu Engineering Corporation Modular V-CVD diffusion furnace
US4794217A (en) * 1985-04-01 1988-12-27 Qing Hua University Induction system for rapid heat treatment of semiconductor wafers
JPS6255453U (en) * 1985-09-26 1987-04-06
KR880701060A (en) * 1985-11-12 1988-04-22 원본미기재 Apparatus and method for cooling induction heated material
JPS62166624U (en) * 1986-04-14 1987-10-22
US4721836A (en) * 1986-05-14 1988-01-26 The United States Of America As Represented By The Secretary Of The Navy Apparatus for transient annealing of semiconductor samples in a controlled ambient
KR880010481A (en) * 1987-02-21 1988-10-10 강진구 Liquid Thin Film Crystal Growth Method and Apparatus
US5093557A (en) * 1989-05-16 1992-03-03 Microscience, Inc. Substrate heater and heating element
US4982347A (en) * 1989-06-22 1991-01-01 Unisys Corporation Process and apparatus for producing temperature profiles in a workpiece as it passes through a belt furnace
US5064367A (en) * 1989-06-28 1991-11-12 Digital Equipment Corporation Conical gas inlet for thermal processing furnace
JPH04297025A (en) * 1991-01-10 1992-10-21 Nec Corp Semiconductor production device
JP4906018B2 (en) * 2001-03-12 2012-03-28 株式会社半導体エネルギー研究所 Film forming method, light emitting device manufacturing method, and film forming apparatus
US7037376B2 (en) * 2003-04-11 2006-05-02 Applied Materials Inc. Backflush chamber clean
US20130161313A1 (en) * 2010-06-04 2013-06-27 Shin-Etsu Chemical Co., Ltd. Heat-treatment furnace

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4917675A (en) * 1972-04-05 1974-02-16
JPS49126260A (en) * 1973-04-04 1974-12-03

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3031338A (en) * 1959-04-03 1962-04-24 Alloyd Res Corp Metal deposition process and apparatus
US3524776A (en) * 1967-01-30 1970-08-18 Corning Glass Works Process for coating silicon wafers
US3657006A (en) * 1969-11-06 1972-04-18 Peter D Fisher Method and apparatus for depositing doped and undoped glassy chalcogenide films at substantially atmospheric pressure
US3828722A (en) * 1970-05-01 1974-08-13 Cogar Corp Apparatus for producing ion-free insulating layers
JPS4834798A (en) * 1971-09-06 1973-05-22
US4129090A (en) * 1973-02-28 1978-12-12 Hitachi, Ltd. Apparatus for diffusion into semiconductor wafers
US3900597A (en) * 1973-12-19 1975-08-19 Motorola Inc System and process for deposition of polycrystalline silicon with silane in vacuum
JPS5936417B2 (en) * 1975-11-26 1984-09-04 株式会社デンソー Diffusion device using high-frequency induction heating for semiconductor substrates
US4033286A (en) * 1976-07-12 1977-07-05 California Institute Of Technology Chemical vapor deposition reactor
US4275094A (en) * 1977-10-31 1981-06-23 Fujitsu Limited Process for high pressure oxidation of silicon

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4917675A (en) * 1972-04-05 1974-02-16
JPS49126260A (en) * 1973-04-04 1974-12-03

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62271420A (en) * 1987-01-16 1987-11-25 Sony Corp Treatment equipment for semiconductor substrate

Also Published As

Publication number Publication date
JPS584811B2 (en) 1983-01-27
US4449037A (en) 1984-05-15
EP0010952A1 (en) 1980-05-14
DE2965631D1 (en) 1983-07-14
EP0010952B1 (en) 1983-06-08

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