JPS5593230A - Soldering method for semiconductor device - Google Patents

Soldering method for semiconductor device

Info

Publication number
JPS5593230A
JPS5593230A JP150779A JP150779A JPS5593230A JP S5593230 A JPS5593230 A JP S5593230A JP 150779 A JP150779 A JP 150779A JP 150779 A JP150779 A JP 150779A JP S5593230 A JPS5593230 A JP S5593230A
Authority
JP
Japan
Prior art keywords
solder
network
thickness
sink
pellet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP150779A
Other languages
Japanese (ja)
Inventor
Susumu Watanabe
Kisaku Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP150779A priority Critical patent/JPS5593230A/en
Publication of JPS5593230A publication Critical patent/JPS5593230A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE: To make the solder thickness even by a method wherein when soldering a silicon pellet and a heat sink, a solder containing the low wire expansion coefficient metallic network is placed between the silicon pellet and the sink, and only the solder is melted, cooled and hardened.
CONSTITUTION: The silicon peller 1 is fixed to the heat sink by means of solder. Plurality of metallic network 3 such as tungsten are inserted in the solder to be used at this time, the solder is melted and dispersed into meshes of the network 3 to become the soldering part 4. In this constitution, the thickness of solder is made 30W100μm and the wire diameter of the network 3 is made 10W30μm. Furthermore, gold with high wire expansion coefficient is not suitable for the wire material to be used, but tungsten or molybdenum is desirable. In this way, the heat coefficient difference between the pellet 1 and the sink 2 is eased and the junction 4 thickness is made even.
COPYRIGHT: (C)1980,JPO&Japio
JP150779A 1979-01-10 1979-01-10 Soldering method for semiconductor device Pending JPS5593230A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP150779A JPS5593230A (en) 1979-01-10 1979-01-10 Soldering method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP150779A JPS5593230A (en) 1979-01-10 1979-01-10 Soldering method for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5593230A true JPS5593230A (en) 1980-07-15

Family

ID=11503384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP150779A Pending JPS5593230A (en) 1979-01-10 1979-01-10 Soldering method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5593230A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63104778A (en) * 1986-10-21 1988-05-10 Nhk Spring Co Ltd Method for joining silicon monocrystal and metal material
US4894293A (en) * 1988-03-10 1990-01-16 Texas Instruments Incorporated Circuit system, a composite metal material for use therein, and a method for making the material
DE102011002535A1 (en) 2010-03-12 2011-09-15 Mitsubishi Electric Corporation Semiconductor device
JP2012064845A (en) * 2010-09-17 2012-03-29 Mitsubishi Electric Corp Semiconductor device and method for manufacturing the same
US20120080799A1 (en) * 2010-09-30 2012-04-05 Infineon Technologies Ag Semiconductor Module Comprising an Insert and Method for Producing a Semiconductor Module Comprising an Insert
WO2022049878A1 (en) * 2020-09-02 2022-03-10 日本特殊陶業株式会社 Joined body, holding device, and electrostatic chuck
DE102019124953B4 (en) 2019-09-17 2023-09-07 Danfoss Silicon Power Gmbh Process for producing a cohesive connection between a semiconductor and a metal shaped body

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63104778A (en) * 1986-10-21 1988-05-10 Nhk Spring Co Ltd Method for joining silicon monocrystal and metal material
US4894293A (en) * 1988-03-10 1990-01-16 Texas Instruments Incorporated Circuit system, a composite metal material for use therein, and a method for making the material
DE102011002535B4 (en) * 2010-03-12 2016-05-12 Mitsubishi Electric Corporation Semiconductor device with connection part
JP2011192695A (en) * 2010-03-12 2011-09-29 Mitsubishi Electric Corp Semiconductor apparatus
US8933568B2 (en) 2010-03-12 2015-01-13 Mitsubishi Electric Corporation Semiconductor device
DE102011002535A1 (en) 2010-03-12 2011-09-15 Mitsubishi Electric Corporation Semiconductor device
JP2012064845A (en) * 2010-09-17 2012-03-29 Mitsubishi Electric Corp Semiconductor device and method for manufacturing the same
US20120080799A1 (en) * 2010-09-30 2012-04-05 Infineon Technologies Ag Semiconductor Module Comprising an Insert and Method for Producing a Semiconductor Module Comprising an Insert
CN102446880A (en) * 2010-09-30 2012-05-09 英飞凌科技股份有限公司 Semiconductor module comprising insert and method for producing semiconductor module comprising insert
US8587116B2 (en) * 2010-09-30 2013-11-19 Infineon Technologies Ag Semiconductor module comprising an insert
DE102019124953B4 (en) 2019-09-17 2023-09-07 Danfoss Silicon Power Gmbh Process for producing a cohesive connection between a semiconductor and a metal shaped body
WO2022049878A1 (en) * 2020-09-02 2022-03-10 日本特殊陶業株式会社 Joined body, holding device, and electrostatic chuck
JPWO2022049878A1 (en) * 2020-09-02 2022-03-10

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