JPS5779623A - Formation of silicate glass film - Google Patents

Formation of silicate glass film

Info

Publication number
JPS5779623A
JPS5779623A JP55155361A JP15536180A JPS5779623A JP S5779623 A JPS5779623 A JP S5779623A JP 55155361 A JP55155361 A JP 55155361A JP 15536180 A JP15536180 A JP 15536180A JP S5779623 A JPS5779623 A JP S5779623A
Authority
JP
Japan
Prior art keywords
gas
flow
silicate glass
tube
reaction tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55155361A
Other languages
Japanese (ja)
Other versions
JPS629214B2 (en
Inventor
Shuichi Miyamoto
Yoshimi Shiotani
Mamoru Maeda
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55155361A priority Critical patent/JPS5779623A/en
Priority to DE8181303829T priority patent/DE3173066D1/en
Priority to EP81303829A priority patent/EP0047112B1/en
Publication of JPS5779623A publication Critical patent/JPS5779623A/en
Priority to US06/518,329 priority patent/US4513026A/en
Publication of JPS629214B2 publication Critical patent/JPS629214B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To make silicate glass films to grow stably on semiconductor substrates by a method wherein hydride gas is made to flow in from a gas feeding fine tube, and oxidizing gas is made to flow in from another gas feeding fine tube. CONSTITUTION:The silicon semiconductor substrates to be treated are arranged at the heat equalizing part in a reaction tube 1, hydride gas being mixed with monosilane and phosphine is made to flow from the gas feeding fine tube 4 into the reaction tube, oxygen gas is made to flow from the gas feeding fine tube 6 into the reaction tube, and moreover oxygen gas is made to flow in from a gas flow-in port 3 of the reaction tube 1, and the silicate glass films are made to grow on the semiconductor substrates. When the silicate glass film manufactured by this way is analyzed with a spectrum analyzer, no Si-H2 is contained therein, containment of phosphorus is uniform, and etching speed is also uniform being in proportion to the contents of phophorus.
JP55155361A 1980-08-29 1980-11-05 Formation of silicate glass film Granted JPS5779623A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP55155361A JPS5779623A (en) 1980-11-05 1980-11-05 Formation of silicate glass film
DE8181303829T DE3173066D1 (en) 1980-08-29 1981-08-21 Method of forming phosphosilicate glass films
EP81303829A EP0047112B1 (en) 1980-08-29 1981-08-21 Method of forming phosphosilicate glass films
US06/518,329 US4513026A (en) 1980-08-29 1983-08-01 Method for coating a semiconductor device with a phosphosilicate glass

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55155361A JPS5779623A (en) 1980-11-05 1980-11-05 Formation of silicate glass film

Publications (2)

Publication Number Publication Date
JPS5779623A true JPS5779623A (en) 1982-05-18
JPS629214B2 JPS629214B2 (en) 1987-02-27

Family

ID=15604225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55155361A Granted JPS5779623A (en) 1980-08-29 1980-11-05 Formation of silicate glass film

Country Status (1)

Country Link
JP (1) JPS5779623A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4098923A (en) * 1976-06-07 1978-07-04 Motorola, Inc. Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4098923A (en) * 1976-06-07 1978-07-04 Motorola, Inc. Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat

Also Published As

Publication number Publication date
JPS629214B2 (en) 1987-02-27

Similar Documents

Publication Publication Date Title
JPS5559729A (en) Forming method of semiconductor surface insulating film
JPS57158370A (en) Formation of metallic thin film
JPS5779623A (en) Formation of silicate glass film
JPS5694751A (en) Vapor growth method
US4279669A (en) Method for epitaxial deposition
JPS5790933A (en) Manufacture of amorphous semiconductor film
JPS5632304A (en) Metal oxide film forming method
IN161171B (en)
JPS5591815A (en) Silicon epitaxial growth
JPS56142642A (en) Manufacture of semiconductor device
JPS5518077A (en) Device for growing film under gas
JPS55109293A (en) Production of semiconductor crystal of group 3-5 compound
JPS6425545A (en) Growing method for boron phosphorus silicate glass film
JPS5799725A (en) Manufacture of amorphous semiconductor film
JPS60227415A (en) Vapor growth apparatus
JPS55121634A (en) Diffusing method for impurity
JPS5745244A (en) Forming method for phosphorous silicate glass film
JPS57103316A (en) Manufacture of compound semiconductor device
JPS56150822A (en) Manufacture of semiconductor device
JPS54121283A (en) Manufacture of silicon single crystal by pulling method and apparatus therefor
JPS56153727A (en) Manufacture of semiconductor device
JPS55110031A (en) Method for vapor growth
JPS56100115A (en) Manufacture of silicon nitride whisker
JPS57188827A (en) Manufacture of semiconductor device
JPS6446917A (en) Chemical vapor growth device