JPS55109293A - Production of semiconductor crystal of group 3-5 compound - Google Patents

Production of semiconductor crystal of group 3-5 compound

Info

Publication number
JPS55109293A
JPS55109293A JP1530279A JP1530279A JPS55109293A JP S55109293 A JPS55109293 A JP S55109293A JP 1530279 A JP1530279 A JP 1530279A JP 1530279 A JP1530279 A JP 1530279A JP S55109293 A JPS55109293 A JP S55109293A
Authority
JP
Japan
Prior art keywords
melt
group iii
crucible
group
purified
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1530279A
Other languages
Japanese (ja)
Other versions
JPS5750760B2 (en
Inventor
Akiyuu Yamamoto
Zeio Kamimura
Shunichi Tono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1530279A priority Critical patent/JPS55109293A/en
Publication of JPS55109293A publication Critical patent/JPS55109293A/en
Publication of JPS5750760B2 publication Critical patent/JPS5750760B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a semiconductor single crystal of a group III-V compound having fully satisfactory quality, by diffusing a group V element into a group III element melt purified by a filter method or a reduction method with H2 bubbles.
CONSTITUTION: A group V element material 2, e.g., red phosphorus, is placed at the bottom of an ampule 2 pending from a main chamber 1. Directly below a crucible 4 an empty crucible 22 for receiving a melt purified by a known filter method is put. Then, a group III element material 23, e.g., In, is placed in the crucible 4, and the chamber 1 is evacuated to a predetermined degree of vacuum by operating vacuum equipment 8. The material 23 is molten by energizing an electric furnace 9. The melt is passed through a small hole provided at the bottom of the crucible 4 to the crucible 22, yielding a group III element melt 24 thus purified by a socalled filter method. An H2 gas is introduced to the chamber 1 and a pipe 14 for H2 gas bubbling is moved in a position to bubble the melt 24 with the gas, yielding group III element melt A thus purified by a socalled reduction method. Next, into the melt A, a vaporized material 21 is diffused, thereby a semiconductor single crystal of a group III-V compound, e.g., InP, is obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP1530279A 1979-02-13 1979-02-13 Production of semiconductor crystal of group 3-5 compound Granted JPS55109293A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1530279A JPS55109293A (en) 1979-02-13 1979-02-13 Production of semiconductor crystal of group 3-5 compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1530279A JPS55109293A (en) 1979-02-13 1979-02-13 Production of semiconductor crystal of group 3-5 compound

Publications (2)

Publication Number Publication Date
JPS55109293A true JPS55109293A (en) 1980-08-22
JPS5750760B2 JPS5750760B2 (en) 1982-10-28

Family

ID=11885005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1530279A Granted JPS55109293A (en) 1979-02-13 1979-02-13 Production of semiconductor crystal of group 3-5 compound

Country Status (1)

Country Link
JP (1) JPS55109293A (en)

Also Published As

Publication number Publication date
JPS5750760B2 (en) 1982-10-28

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