JPS55109293A - Production of semiconductor crystal of group 3-5 compound - Google Patents
Production of semiconductor crystal of group 3-5 compoundInfo
- Publication number
- JPS55109293A JPS55109293A JP1530279A JP1530279A JPS55109293A JP S55109293 A JPS55109293 A JP S55109293A JP 1530279 A JP1530279 A JP 1530279A JP 1530279 A JP1530279 A JP 1530279A JP S55109293 A JPS55109293 A JP S55109293A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- group iii
- crucible
- group
- purified
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain a semiconductor single crystal of a group III-V compound having fully satisfactory quality, by diffusing a group V element into a group III element melt purified by a filter method or a reduction method with H2 bubbles.
CONSTITUTION: A group V element material 2, e.g., red phosphorus, is placed at the bottom of an ampule 2 pending from a main chamber 1. Directly below a crucible 4 an empty crucible 22 for receiving a melt purified by a known filter method is put. Then, a group III element material 23, e.g., In, is placed in the crucible 4, and the chamber 1 is evacuated to a predetermined degree of vacuum by operating vacuum equipment 8. The material 23 is molten by energizing an electric furnace 9. The melt is passed through a small hole provided at the bottom of the crucible 4 to the crucible 22, yielding a group III element melt 24 thus purified by a socalled filter method. An H2 gas is introduced to the chamber 1 and a pipe 14 for H2 gas bubbling is moved in a position to bubble the melt 24 with the gas, yielding group III element melt A thus purified by a socalled reduction method. Next, into the melt A, a vaporized material 21 is diffused, thereby a semiconductor single crystal of a group III-V compound, e.g., InP, is obtained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1530279A JPS55109293A (en) | 1979-02-13 | 1979-02-13 | Production of semiconductor crystal of group 3-5 compound |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1530279A JPS55109293A (en) | 1979-02-13 | 1979-02-13 | Production of semiconductor crystal of group 3-5 compound |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55109293A true JPS55109293A (en) | 1980-08-22 |
JPS5750760B2 JPS5750760B2 (en) | 1982-10-28 |
Family
ID=11885005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1530279A Granted JPS55109293A (en) | 1979-02-13 | 1979-02-13 | Production of semiconductor crystal of group 3-5 compound |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55109293A (en) |
-
1979
- 1979-02-13 JP JP1530279A patent/JPS55109293A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5750760B2 (en) | 1982-10-28 |
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