DE3068008D1 - Process for the characterization of the oxygen content of silicon rods drawn by the czochralski method - Google Patents

Process for the characterization of the oxygen content of silicon rods drawn by the czochralski method

Info

Publication number
DE3068008D1
DE3068008D1 DE8080102649T DE3068008T DE3068008D1 DE 3068008 D1 DE3068008 D1 DE 3068008D1 DE 8080102649 T DE8080102649 T DE 8080102649T DE 3068008 T DE3068008 T DE 3068008T DE 3068008 D1 DE3068008 D1 DE 3068008D1
Authority
DE
Germany
Prior art keywords
characterization
oxygen content
czochralski method
silicon rods
rods drawn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080102649T
Other languages
German (de)
Inventor
Victor Cazcarra
Andre Schwab
Patrick Zunino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3068008D1 publication Critical patent/DE3068008D1/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/041—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/024—Defect control-gettering and annealing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Electrochemistry (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
DE8080102649T 1979-06-29 1980-05-13 Process for the characterization of the oxygen content of silicon rods drawn by the czochralski method Expired DE3068008D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7917302A FR2460479A1 (en) 1979-06-29 1979-06-29 PROCESS FOR CHARACTERIZING THE OXYGEN CONTENT OF SILICON BARS DRAWN ACCORDING TO THE CZOCHRALSKI METHOD

Publications (1)

Publication Number Publication Date
DE3068008D1 true DE3068008D1 (en) 1984-07-05

Family

ID=9227471

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080102649T Expired DE3068008D1 (en) 1979-06-29 1980-05-13 Process for the characterization of the oxygen content of silicon rods drawn by the czochralski method

Country Status (7)

Country Link
US (1) US4344815A (en)
EP (1) EP0020993B1 (en)
JP (1) JPS5830279B2 (en)
CA (1) CA1138674A (en)
DE (1) DE3068008D1 (en)
FR (1) FR2460479A1 (en)
IT (1) IT1174671B (en)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5618575A (en) * 1979-07-24 1981-02-21 Kadoman Nagahamatani Shoten:Kk Processed sea tangle and processing of the same
EP0042901B1 (en) * 1980-06-26 1984-10-31 International Business Machines Corporation Process for controlling the oxygen content of silicon ingots pulled by the czochralski method
US4342616A (en) * 1981-02-17 1982-08-03 International Business Machines Corporation Technique for predicting oxygen precipitation in semiconductor wafers
NL8102101A (en) * 1981-04-29 1982-11-16 Philips Nv METHOD FOR PULLING UP A SILICON BAR AND SEMICONDUCTOR DEVICE MADE FROM THE SILICON BAR
JPS5814538A (en) * 1981-07-17 1983-01-27 Fujitsu Ltd Manufacture of semiconductor device
US4459159A (en) * 1982-09-29 1984-07-10 Mara William C O Method for making semi-insulating substrate by post-process heating of oxygenated and doped silicon
JPS59120076A (en) * 1982-12-27 1984-07-11 Takeyoshi Maeda Method and apparatus for preparation of tidbit using seaweed as main raw material
JPS59187765A (en) * 1983-04-07 1984-10-24 Maruka:Kk Preparation of tidbit
US4505759A (en) * 1983-12-19 1985-03-19 Mara William C O Method for making a conductive silicon substrate by heat treatment of oxygenated and lightly doped silicon single crystals
JPS60190288U (en) * 1984-05-23 1985-12-17 朝日　七郎 Tororo kelp processing equipment
DE3473971D1 (en) * 1984-06-20 1988-10-13 Ibm Method of standardization and stabilization of semiconductor wafers
JPS6156889U (en) * 1984-09-19 1986-04-16
US4859938A (en) * 1986-05-05 1989-08-22 Intel Corporation Novel technique to detect oxydonor generation in IC fabrication
JPH0787187B2 (en) * 1987-08-13 1995-09-20 古河電気工業株式会社 Method for manufacturing GaAs compound semiconductor substrate
JPH02263793A (en) * 1989-04-05 1990-10-26 Nippon Steel Corp Silicon single crystal difficult in generation of defect in lamination layer inducing oxidation and its production
US5096839A (en) * 1989-09-20 1992-03-17 Kabushiki Kaisha Toshiba Silicon wafer with defined interstitial oxygen concentration
JPH0750713B2 (en) * 1990-09-21 1995-05-31 コマツ電子金属株式会社 Heat treatment method for semiconductor wafers
JP2719851B2 (en) * 1991-01-29 1998-02-25 信越半導体株式会社 Evaluation method of silicon single crystal rod
JP2572512B2 (en) * 1992-09-24 1997-01-16 信越半導体株式会社 Manufacturing method of diffusion type silicon element substrate
GB2279586A (en) * 1993-01-06 1995-01-11 Nippon Steel Corp Method and apparatus for predicting crystal quality of single-crystal semiconductor
US5485803A (en) * 1993-01-06 1996-01-23 Nippon Steel Corporation Method of predicting crystal quality of semiconductor single crystal and apparatus thereof
US5795381A (en) * 1996-09-09 1998-08-18 Memc Electrical Materials, Inc. SIO probe for real-time monitoring and control of oxygen during czochralski growth of single crystal silicon
KR100240023B1 (en) * 1996-11-29 2000-01-15 윤종용 Method of annealing semiconductor wafer and semiconductor wafer using the same
KR100252214B1 (en) * 1997-04-23 2000-04-15 윤종용 Analysing method of bare wafer
US6635587B1 (en) * 1999-09-23 2003-10-21 Memc Electronic Materials, Inc. Method for producing czochralski silicon free of agglomerated self-interstitial defects
KR101045309B1 (en) * 2004-02-03 2011-06-29 신에쯔 한도타이 가부시키가이샤 Method for Manufacturing Semiconductor Wafer and System for Determining Cut Position of Semiconductor Ingot
FR2964459B1 (en) * 2010-09-02 2012-09-28 Commissariat Energie Atomique METHOD FOR MAPPING THE OXYGEN CONCENTRATION
FR2974180B1 (en) * 2011-04-15 2013-04-26 Commissariat Energie Atomique METHOD FOR DETERMINING THE INTERSTITIAL OXYGEN CONCENTRATION
FR2989168B1 (en) * 2012-04-06 2014-03-28 Commissariat Energie Atomique DETERMINATION OF INTERSTITIAL OXYGEN CONCENTRATION IN A SEMICONDUCTOR SAMPLE
FR3027676B1 (en) 2014-10-22 2016-12-09 Commissariat Energie Atomique PROCESS FOR CHARACTERIZING THE INTERSTITILE OXYGEN CONCENTRATION IN A SEMICONDUCTOR INGOT
FR3027675B1 (en) 2014-10-22 2017-11-24 Commissariat Energie Atomique PROCESS FOR CHARACTERIZING THE INTERSTITILE OXYGEN CONCENTRATION IN A SEMICONDUCTOR INGOT
JP7067267B2 (en) * 2018-05-23 2022-05-16 信越半導体株式会社 Method for measuring resistivity of raw material crystal and method for manufacturing FZ silicon single crystal
JP7240827B2 (en) * 2018-07-02 2023-03-16 信越半導体株式会社 Method for measuring resistivity of raw material crystal and method for producing FZ silicon single crystal

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3725148A (en) * 1970-08-31 1973-04-03 D Kendall Individual device tuning using localized solid-state reactions
US4140570A (en) * 1973-11-19 1979-02-20 Texas Instruments Incorporated Method of growing single crystal silicon by the Czochralski method which eliminates the need for post growth annealing for resistivity stabilization
FR2435818A1 (en) * 1978-09-08 1980-04-04 Ibm France PROCESS FOR INCREASING THE INTERNAL TRAPPING EFFECT OF SEMICONDUCTOR BODIES

Also Published As

Publication number Publication date
US4344815A (en) 1982-08-17
CA1138674A (en) 1983-01-04
JPS569300A (en) 1981-01-30
EP0020993B1 (en) 1984-05-30
EP0020993A1 (en) 1981-01-07
FR2460479A1 (en) 1981-01-23
IT1174671B (en) 1987-07-01
IT8022603A0 (en) 1980-06-06
JPS5830279B2 (en) 1983-06-28

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Legal Events

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8339 Ceased/non-payment of the annual fee