JPS6461392A - Production of gaas single crystal - Google Patents

Production of gaas single crystal

Info

Publication number
JPS6461392A
JPS6461392A JP21549787A JP21549787A JPS6461392A JP S6461392 A JPS6461392 A JP S6461392A JP 21549787 A JP21549787 A JP 21549787A JP 21549787 A JP21549787 A JP 21549787A JP S6461392 A JPS6461392 A JP S6461392A
Authority
JP
Japan
Prior art keywords
single crystal
carbon
gaas single
crucible
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21549787A
Other languages
Japanese (ja)
Inventor
Kazuhisa Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP21549787A priority Critical patent/JPS6461392A/en
Publication of JPS6461392A publication Critical patent/JPS6461392A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain a GaAs single crystal containing a uniform concentration of carbon contaminant by employing the double crucible method to control the carbon concentration in the liquid separating the outer crucible from the inner one at the start of the crystal growth in the production of GaAs single crystal by the LEC method. CONSTITUTION:In the production of a GaAs single crystal by the LEC method, the crystal source and B2O3 are introduced into the outer crucible to form a melt and the inner crucible is allowed to float on the melt, and to stand for a prescribed time. When the concentration of carbon contaminants n1 of the melt in the inner crucible reaches the ratio to the concentration of carbon contaminants in the outer crucible n2 reaches n1/n2=1/k (k is segregation coefficient of carbon), the crystal growth is started.
JP21549787A 1987-08-31 1987-08-31 Production of gaas single crystal Pending JPS6461392A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21549787A JPS6461392A (en) 1987-08-31 1987-08-31 Production of gaas single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21549787A JPS6461392A (en) 1987-08-31 1987-08-31 Production of gaas single crystal

Publications (1)

Publication Number Publication Date
JPS6461392A true JPS6461392A (en) 1989-03-08

Family

ID=16673369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21549787A Pending JPS6461392A (en) 1987-08-31 1987-08-31 Production of gaas single crystal

Country Status (1)

Country Link
JP (1) JPS6461392A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252175A (en) * 1990-06-29 1993-10-12 The United States Of America As Represented By The Secretary Of The Air Force Capillary pressure relief for magnetic Kyropoulos growth of semiconductor crystals

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252175A (en) * 1990-06-29 1993-10-12 The United States Of America As Represented By The Secretary Of The Air Force Capillary pressure relief for magnetic Kyropoulos growth of semiconductor crystals

Similar Documents

Publication Publication Date Title
DE3068008D1 (en) Process for the characterization of the oxygen content of silicon rods drawn by the czochralski method
MY101038A (en) Method and apparatus for melting and refining glass material
GB1515971A (en) Growing silicon crystals
GB1528897A (en) Method of purifying silicon
MY104476A (en) Apparatus for manufacturing silicon single crystals.
DE3485093D1 (en) BREEDING METHOD AND DEVICE FOR PRODUCING SILICON CRYSTALS WITH A HIGH AND CONTROLLED CARBON CONTENT.
JPS6461392A (en) Production of gaas single crystal
MY104640A (en) Apparatus for manufacturing silicon single crystals.
MY107366A (en) A process for the separation of two liquid immiscible organic components using a fibre bed as coalescence aid.
JPS6437833A (en) Semi-insulating gaas single crystal
ES2006067A6 (en) PROCESS FOR PRODUCING p-XYLOL WITH A PURITY OF AT LEAST 99.5 %
YU102489A (en) Process for removing bismut from lead
JPS5490086A (en) Method of producing single crystal
ES8506608A1 (en) Dialkyl sulphosuccinate composition and process for its preparation.
JPS57175799A (en) Method of producing ggg single crystal
Mogilevskii et al. Influence of the Level of Purification of Inert Gases on the Quality of TiCu Crystals Grown From Their Melt
JPS52104474A (en) Control method for crystal growth
JPS6445799A (en) Production of cadmium telluride based crystal
JPS5228258A (en) Method for growth of crystals from liquid phase
KR940014927A (en) Manganese Zinc Ferrite Single Crystal
JPS55109293A (en) Production of semiconductor crystal of group 3-5 compound
JPS6445796A (en) Apparatus for pulling up si single crystal and method therefor
JPS538375A (en) Method and apparatus for pulling up single crystal
JPS57170894A (en) Manufacture of single crystal of ferrodielectic substance
KR930004510A (en) Method for preparing LiTaOз single crystal