JPS6461392A - Production of gaas single crystal - Google Patents
Production of gaas single crystalInfo
- Publication number
- JPS6461392A JPS6461392A JP21549787A JP21549787A JPS6461392A JP S6461392 A JPS6461392 A JP S6461392A JP 21549787 A JP21549787 A JP 21549787A JP 21549787 A JP21549787 A JP 21549787A JP S6461392 A JPS6461392 A JP S6461392A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- carbon
- gaas single
- crucible
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To obtain a GaAs single crystal containing a uniform concentration of carbon contaminant by employing the double crucible method to control the carbon concentration in the liquid separating the outer crucible from the inner one at the start of the crystal growth in the production of GaAs single crystal by the LEC method. CONSTITUTION:In the production of a GaAs single crystal by the LEC method, the crystal source and B2O3 are introduced into the outer crucible to form a melt and the inner crucible is allowed to float on the melt, and to stand for a prescribed time. When the concentration of carbon contaminants n1 of the melt in the inner crucible reaches the ratio to the concentration of carbon contaminants in the outer crucible n2 reaches n1/n2=1/k (k is segregation coefficient of carbon), the crystal growth is started.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21549787A JPS6461392A (en) | 1987-08-31 | 1987-08-31 | Production of gaas single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21549787A JPS6461392A (en) | 1987-08-31 | 1987-08-31 | Production of gaas single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6461392A true JPS6461392A (en) | 1989-03-08 |
Family
ID=16673369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21549787A Pending JPS6461392A (en) | 1987-08-31 | 1987-08-31 | Production of gaas single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6461392A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5252175A (en) * | 1990-06-29 | 1993-10-12 | The United States Of America As Represented By The Secretary Of The Air Force | Capillary pressure relief for magnetic Kyropoulos growth of semiconductor crystals |
-
1987
- 1987-08-31 JP JP21549787A patent/JPS6461392A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5252175A (en) * | 1990-06-29 | 1993-10-12 | The United States Of America As Represented By The Secretary Of The Air Force | Capillary pressure relief for magnetic Kyropoulos growth of semiconductor crystals |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3068008D1 (en) | Process for the characterization of the oxygen content of silicon rods drawn by the czochralski method | |
MY101038A (en) | Method and apparatus for melting and refining glass material | |
GB1515971A (en) | Growing silicon crystals | |
GB1528897A (en) | Method of purifying silicon | |
MY104476A (en) | Apparatus for manufacturing silicon single crystals. | |
DE3485093D1 (en) | BREEDING METHOD AND DEVICE FOR PRODUCING SILICON CRYSTALS WITH A HIGH AND CONTROLLED CARBON CONTENT. | |
JPS6461392A (en) | Production of gaas single crystal | |
MY104640A (en) | Apparatus for manufacturing silicon single crystals. | |
MY107366A (en) | A process for the separation of two liquid immiscible organic components using a fibre bed as coalescence aid. | |
JPS6437833A (en) | Semi-insulating gaas single crystal | |
ES2006067A6 (en) | PROCESS FOR PRODUCING p-XYLOL WITH A PURITY OF AT LEAST 99.5 % | |
YU102489A (en) | Process for removing bismut from lead | |
JPS5490086A (en) | Method of producing single crystal | |
ES8506608A1 (en) | Dialkyl sulphosuccinate composition and process for its preparation. | |
JPS57175799A (en) | Method of producing ggg single crystal | |
Mogilevskii et al. | Influence of the Level of Purification of Inert Gases on the Quality of TiCu Crystals Grown From Their Melt | |
JPS52104474A (en) | Control method for crystal growth | |
JPS6445799A (en) | Production of cadmium telluride based crystal | |
JPS5228258A (en) | Method for growth of crystals from liquid phase | |
KR940014927A (en) | Manganese Zinc Ferrite Single Crystal | |
JPS55109293A (en) | Production of semiconductor crystal of group 3-5 compound | |
JPS6445796A (en) | Apparatus for pulling up si single crystal and method therefor | |
JPS538375A (en) | Method and apparatus for pulling up single crystal | |
JPS57170894A (en) | Manufacture of single crystal of ferrodielectic substance | |
KR930004510A (en) | Method for preparing LiTaOз single crystal |