JPS57118095A - Manufacturing apparatus for beltlike silicon crystal - Google Patents

Manufacturing apparatus for beltlike silicon crystal

Info

Publication number
JPS57118095A
JPS57118095A JP17781A JP17781A JPS57118095A JP S57118095 A JPS57118095 A JP S57118095A JP 17781 A JP17781 A JP 17781A JP 17781 A JP17781 A JP 17781A JP S57118095 A JPS57118095 A JP S57118095A
Authority
JP
Japan
Prior art keywords
die
beltlike
silicon crystal
crystal
positions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17781A
Other languages
Japanese (ja)
Other versions
JPS5914433B2 (en
Inventor
Masanaru Abe
Kazue Sekikawa
Mitsuo Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP17781A priority Critical patent/JPS5914433B2/en
Publication of JPS57118095A publication Critical patent/JPS57118095A/en
Publication of JPS5914433B2 publication Critical patent/JPS5914433B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To control the width of a beltlike silicon crystal stably and accurately without requiring a large-scale apparatus by making notches in the tip of a capillary die at positions at a prescribed distance from both ends of the die in the longitudinal direction.
CONSTITUTION: A capillary die 31, 32 having a slit is put in a crucible 2 holding molten silicon 1, and a seed crystal is brought into contact with molten silicon 1 rising through the slit to pull up a beltlike silicon crystal 4. In this apparatus notches 51, 52 are made in the tip of the die 31, 32 at positions at a prescribed distance from both ends of the die in the longitudinal direction. When the crystal reaches points C, D corresponding to the positions of the notches 5 of the die 3, it does not grow wide from the points C, D. Thus, the width of a beltlike silicon crystal can be controlled automatically and accurately using such an inexpensive apparatus having a simple structure without requiring special operation for controlling the width.
COPYRIGHT: (C)1982,JPO&Japio
JP17781A 1981-01-06 1981-01-06 Manufacturing equipment for band-shaped silicon crystals Expired JPS5914433B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17781A JPS5914433B2 (en) 1981-01-06 1981-01-06 Manufacturing equipment for band-shaped silicon crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17781A JPS5914433B2 (en) 1981-01-06 1981-01-06 Manufacturing equipment for band-shaped silicon crystals

Publications (2)

Publication Number Publication Date
JPS57118095A true JPS57118095A (en) 1982-07-22
JPS5914433B2 JPS5914433B2 (en) 1984-04-04

Family

ID=11466719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17781A Expired JPS5914433B2 (en) 1981-01-06 1981-01-06 Manufacturing equipment for band-shaped silicon crystals

Country Status (1)

Country Link
JP (1) JPS5914433B2 (en)

Also Published As

Publication number Publication date
JPS5914433B2 (en) 1984-04-04

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