JPS5480283A - Growing apparatus for silicon ribbon crystal - Google Patents
Growing apparatus for silicon ribbon crystalInfo
- Publication number
- JPS5480283A JPS5480283A JP14815977A JP14815977A JPS5480283A JP S5480283 A JPS5480283 A JP S5480283A JP 14815977 A JP14815977 A JP 14815977A JP 14815977 A JP14815977 A JP 14815977A JP S5480283 A JPS5480283 A JP S5480283A
- Authority
- JP
- Japan
- Prior art keywords
- die
- ribbon crystal
- liq
- pulling
- cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To grow thin ribbon crystal of constant shape at high speed, by installing a die made of carbon having many capillary slits for feeding Si molten liq. at the upper end surface made by cutting the die obliquely at an acute angle to pulling up direction for the ribbon crystal.
CONSTITUTION: Many capillary slits 5 are made in parallel with the thickness direction on the upper end surface of a die 2 made of carbon, the surface which is made by cutting the die obliquely at an acute angle to the pulling up direction. Si molten liq. 4, in the same way with the conventional FEG process, rises to the upper end surface of the die 2 by the capillarity of the slits 5, and wets whole surface made by cutting the die obliquely. Pulling up of ribbon crystal 1 from the molten liq. 4 yields a crystal of constant thickness depending on the shape of the die 2, in addn., at high rate because of large area of solid-liq. interface.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14815977A JPS5480283A (en) | 1977-12-12 | 1977-12-12 | Growing apparatus for silicon ribbon crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14815977A JPS5480283A (en) | 1977-12-12 | 1977-12-12 | Growing apparatus for silicon ribbon crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5480283A true JPS5480283A (en) | 1979-06-26 |
JPS5617316B2 JPS5617316B2 (en) | 1981-04-21 |
Family
ID=15446568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14815977A Granted JPS5480283A (en) | 1977-12-12 | 1977-12-12 | Growing apparatus for silicon ribbon crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5480283A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3217686A1 (en) * | 1982-05-11 | 1983-11-17 | Siemens AG, 1000 Berlin und 8000 München | Apparatus for producing large-area strip-type silicon bodies for solar cells |
-
1977
- 1977-12-12 JP JP14815977A patent/JPS5480283A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3217686A1 (en) * | 1982-05-11 | 1983-11-17 | Siemens AG, 1000 Berlin und 8000 München | Apparatus for producing large-area strip-type silicon bodies for solar cells |
Also Published As
Publication number | Publication date |
---|---|
JPS5617316B2 (en) | 1981-04-21 |
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