JPS5480283A - Growing apparatus for silicon ribbon crystal - Google Patents

Growing apparatus for silicon ribbon crystal

Info

Publication number
JPS5480283A
JPS5480283A JP14815977A JP14815977A JPS5480283A JP S5480283 A JPS5480283 A JP S5480283A JP 14815977 A JP14815977 A JP 14815977A JP 14815977 A JP14815977 A JP 14815977A JP S5480283 A JPS5480283 A JP S5480283A
Authority
JP
Japan
Prior art keywords
die
ribbon crystal
liq
pulling
cutting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14815977A
Other languages
Japanese (ja)
Other versions
JPS5617316B2 (en
Inventor
Takeshi Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP14815977A priority Critical patent/JPS5480283A/en
Publication of JPS5480283A publication Critical patent/JPS5480283A/en
Publication of JPS5617316B2 publication Critical patent/JPS5617316B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To grow thin ribbon crystal of constant shape at high speed, by installing a die made of carbon having many capillary slits for feeding Si molten liq. at the upper end surface made by cutting the die obliquely at an acute angle to pulling up direction for the ribbon crystal.
CONSTITUTION: Many capillary slits 5 are made in parallel with the thickness direction on the upper end surface of a die 2 made of carbon, the surface which is made by cutting the die obliquely at an acute angle to the pulling up direction. Si molten liq. 4, in the same way with the conventional FEG process, rises to the upper end surface of the die 2 by the capillarity of the slits 5, and wets whole surface made by cutting the die obliquely. Pulling up of ribbon crystal 1 from the molten liq. 4 yields a crystal of constant thickness depending on the shape of the die 2, in addn., at high rate because of large area of solid-liq. interface.
COPYRIGHT: (C)1979,JPO&Japio
JP14815977A 1977-12-12 1977-12-12 Growing apparatus for silicon ribbon crystal Granted JPS5480283A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14815977A JPS5480283A (en) 1977-12-12 1977-12-12 Growing apparatus for silicon ribbon crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14815977A JPS5480283A (en) 1977-12-12 1977-12-12 Growing apparatus for silicon ribbon crystal

Publications (2)

Publication Number Publication Date
JPS5480283A true JPS5480283A (en) 1979-06-26
JPS5617316B2 JPS5617316B2 (en) 1981-04-21

Family

ID=15446568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14815977A Granted JPS5480283A (en) 1977-12-12 1977-12-12 Growing apparatus for silicon ribbon crystal

Country Status (1)

Country Link
JP (1) JPS5480283A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3217686A1 (en) * 1982-05-11 1983-11-17 Siemens AG, 1000 Berlin und 8000 München Apparatus for producing large-area strip-type silicon bodies for solar cells

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3217686A1 (en) * 1982-05-11 1983-11-17 Siemens AG, 1000 Berlin und 8000 München Apparatus for producing large-area strip-type silicon bodies for solar cells

Also Published As

Publication number Publication date
JPS5617316B2 (en) 1981-04-21

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