JPS5361577A - Growing method for horizontally pulled ribbon crystal - Google Patents
Growing method for horizontally pulled ribbon crystalInfo
- Publication number
- JPS5361577A JPS5361577A JP13636376A JP13636376A JPS5361577A JP S5361577 A JPS5361577 A JP S5361577A JP 13636376 A JP13636376 A JP 13636376A JP 13636376 A JP13636376 A JP 13636376A JP S5361577 A JPS5361577 A JP S5361577A
- Authority
- JP
- Japan
- Prior art keywords
- growing method
- ribbon crystal
- horizontally pulled
- growth
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To grow the ribbon-shaped crystal with a higher speed and more thinly than usual, by cooling the crystal in the neighborhood of the end part of the boundary surface of growth in the growing direction of the ribbon (the pointed end of growth) and the surface part of the molten substance particularly intensely compared with the remaining part of the boundary surface of growth.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13636376A JPS5361577A (en) | 1976-11-15 | 1976-11-15 | Growing method for horizontally pulled ribbon crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13636376A JPS5361577A (en) | 1976-11-15 | 1976-11-15 | Growing method for horizontally pulled ribbon crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5361577A true JPS5361577A (en) | 1978-06-02 |
JPS5336839B2 JPS5336839B2 (en) | 1978-10-05 |
Family
ID=15173411
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13636376A Granted JPS5361577A (en) | 1976-11-15 | 1976-11-15 | Growing method for horizontally pulled ribbon crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5361577A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015163584A (en) * | 2008-03-14 | 2015-09-10 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | Production device of floating sheet and method |
CN109923246A (en) * | 2016-09-16 | 2019-06-21 | 瓦里安半导体设备公司 | Form the device and method of crystalline wafer |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5671801U (en) * | 1979-11-06 | 1981-06-13 | ||
JPS5886880U (en) * | 1981-12-07 | 1983-06-13 | ナショナル住宅産業株式会社 | eave structure |
JPS5980075U (en) * | 1982-11-20 | 1984-05-30 | アルナ工機株式会社 | unit window frame |
-
1976
- 1976-11-15 JP JP13636376A patent/JPS5361577A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015163584A (en) * | 2008-03-14 | 2015-09-10 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | Production device of floating sheet and method |
CN109923246A (en) * | 2016-09-16 | 2019-06-21 | 瓦里安半导体设备公司 | Form the device and method of crystalline wafer |
EP3512989A4 (en) * | 2016-09-16 | 2020-05-13 | Leading Edge Crystal Technologies, Inc. | Apparatus and method for crystalline sheet growth related applications |
CN109923246B (en) * | 2016-09-16 | 2022-02-18 | 瓦里安半导体设备公司 | Apparatus and method for forming crystalline sheet |
Also Published As
Publication number | Publication date |
---|---|
JPS5336839B2 (en) | 1978-10-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5320767A (en) | X-ray mask supporting underlayer and its production | |
JPS5361577A (en) | Growing method for horizontally pulled ribbon crystal | |
JPS5276277A (en) | Producing long and narrow crystal | |
JPS53105371A (en) | Crystal growing method for potassium arsenide | |
JPS52155189A (en) | Multiple layer crystal growth | |
JPS549171A (en) | Single crystal pulling method | |
JPS52106673A (en) | Crystal growing method and device thereof | |
JPS5215485A (en) | Process for growth of ribbon crystals by lateral pulling | |
JPS5413477A (en) | Continuous growing apparatus for single crystal | |
JPS52120763A (en) | Silicon epitaxial growth method | |
JPS53139970A (en) | Liquid phase epitaxial growth method of gaas crystal | |
JPS52149273A (en) | Production of plate-shaped crystal | |
JPS53144887A (en) | Production of ribbon-shaped silicon crystal | |
JPS5435899A (en) | Production of rare earth element gallium garnet single crystal | |
JPS524782A (en) | Liquid phase epitaxial growth method | |
JPS5423467A (en) | Singlecrystal growing method for binary semiconductor | |
JPS5371689A (en) | Manufacturing apparatus for band type silicon crystal | |
JPS5285080A (en) | Growing of laterally drawn ribbon single crystal | |
JPS5224165A (en) | Process for growth of ribbon crystal by horizontal drawing | |
JPS51142499A (en) | Crystal growing method | |
JPS5286058A (en) | Liquid phase epitaxial growth | |
JPS5289599A (en) | Liquid phase eptaxial growth | |
JPS5337184A (en) | Epitaxially growing method in liquid phase | |
JPS52114268A (en) | Selective liquid growing method | |
JPS53119790A (en) | Growing method for crystal |