JPS5497368A - Thermal oxidizing unit - Google Patents

Thermal oxidizing unit

Info

Publication number
JPS5497368A
JPS5497368A JP492078A JP492078A JPS5497368A JP S5497368 A JPS5497368 A JP S5497368A JP 492078 A JP492078 A JP 492078A JP 492078 A JP492078 A JP 492078A JP S5497368 A JPS5497368 A JP S5497368A
Authority
JP
Japan
Prior art keywords
hydrogen
furnace
tube
variance
oxidized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP492078A
Other languages
Japanese (ja)
Inventor
Sokichi Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP492078A priority Critical patent/JPS5497368A/en
Publication of JPS5497368A publication Critical patent/JPS5497368A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the variance in oxidized-film thickness by removing the influence of heat of reaction between oxgyen and hydrogen, by uniforming temperature distribution inside of an oxidation oven, and by increasing the number of processed sheets by providing a firing method for hydrogen outside of the oxidation furnace.
CONSTITUTION: Gas inflow terminal 4b of furnace-core tube 3b is made away from oxidation furnace 7, heater 13 covered with quarz tube 12 is placed near the tip of hydrogen inflow tube 6, and heater 13 is put to work by power supply 14. As a result, hydrogen 2 and oxygen 1 flowing in react each other inside of the furnace away from wafer 11. Therefore, the unevenness of temperature distribution due to the influence of the heat of burning of hydrogen and oxygen is nearly eliminated and the number of oxidizable sheets can be increased. Further, the distance is sufficient from where vapor is produced until the wafer and the vapor is therefore dispersed, so that the variance of the oxidized-film thickness can be reduced greatly.
COPYRIGHT: (C)1979,JPO&Japio
JP492078A 1978-01-19 1978-01-19 Thermal oxidizing unit Pending JPS5497368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP492078A JPS5497368A (en) 1978-01-19 1978-01-19 Thermal oxidizing unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP492078A JPS5497368A (en) 1978-01-19 1978-01-19 Thermal oxidizing unit

Publications (1)

Publication Number Publication Date
JPS5497368A true JPS5497368A (en) 1979-08-01

Family

ID=11597044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP492078A Pending JPS5497368A (en) 1978-01-19 1978-01-19 Thermal oxidizing unit

Country Status (1)

Country Link
JP (1) JPS5497368A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61194728A (en) * 1985-02-25 1986-08-29 Hitachi Ltd Heat treatment apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61194728A (en) * 1985-02-25 1986-08-29 Hitachi Ltd Heat treatment apparatus
JPH06101429B2 (en) * 1985-02-25 1994-12-12 株式会社日立製作所 Heat treatment equipment

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