JPS6469017A - Formation of oxynitride film - Google Patents
Formation of oxynitride filmInfo
- Publication number
- JPS6469017A JPS6469017A JP22789787A JP22789787A JPS6469017A JP S6469017 A JPS6469017 A JP S6469017A JP 22789787 A JP22789787 A JP 22789787A JP 22789787 A JP22789787 A JP 22789787A JP S6469017 A JPS6469017 A JP S6469017A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- proportion
- ammonia
- oxygen
- lamp annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To make it possible to form a film having precise and uniform thickness on a silicon substrate by means of a lamp annealing apparatus, by employing ammonia and oxygen as reaction gases and substituting these gases with each other while continuously changing proportions of flow rates thereof. CONSTITUTION:A silicon substrate 1 is introduced in a lamp annealing apparatus and disposed on pins 4a of a carrying base 4. Nitrogen gas is then introduced into the lamp annealing apparatus and the temperature within the apparatus is increased to a lamp annealing temperature, With the lapse of treating time, proportion of the nitrogen gas in the introduced gas is decreased gradually while proportion of ammnonia is increased by that much, until all of the introduced gas is occupied by ammonia. Treatment is performed under such conditions so that a silicon nitride film 2 is formed on the surface of the substrate 1. After that, the proportion of ammonia is decreased while the proportion of oxygen gas is increased by that much until all of the introduced gas is occupied by oxygen gas. Treatment is performed within the atmosphere of oxygen so that the silicon nitride film 2 formed with ammonia is converted into an oxynitride film 3. The oxygen gas is then substituted with nitrogen gas and the silicon substrate 1 is taken out of the apparatus.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22789787A JPS6469017A (en) | 1987-09-10 | 1987-09-10 | Formation of oxynitride film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22789787A JPS6469017A (en) | 1987-09-10 | 1987-09-10 | Formation of oxynitride film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6469017A true JPS6469017A (en) | 1989-03-15 |
Family
ID=16868023
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22789787A Pending JPS6469017A (en) | 1987-09-10 | 1987-09-10 | Formation of oxynitride film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6469017A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05304146A (en) * | 1992-04-28 | 1993-11-16 | Oki Electric Ind Co Ltd | Deposition of insulation film |
KR100563748B1 (en) * | 1997-08-05 | 2006-08-30 | 프리스케일 세미컨덕터, 인크. | Manufacturing method of semiconductor device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6260226A (en) * | 1985-09-10 | 1987-03-16 | Seiko Epson Corp | High speed optical oxidation and nitrification device |
JPS63182825A (en) * | 1987-01-26 | 1988-07-28 | Hitachi Ltd | Formation of insulating film |
JPS63237568A (en) * | 1987-03-26 | 1988-10-04 | Seiko Instr & Electronics Ltd | Manufacture of semiconductor device |
-
1987
- 1987-09-10 JP JP22789787A patent/JPS6469017A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6260226A (en) * | 1985-09-10 | 1987-03-16 | Seiko Epson Corp | High speed optical oxidation and nitrification device |
JPS63182825A (en) * | 1987-01-26 | 1988-07-28 | Hitachi Ltd | Formation of insulating film |
JPS63237568A (en) * | 1987-03-26 | 1988-10-04 | Seiko Instr & Electronics Ltd | Manufacture of semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05304146A (en) * | 1992-04-28 | 1993-11-16 | Oki Electric Ind Co Ltd | Deposition of insulation film |
KR100563748B1 (en) * | 1997-08-05 | 2006-08-30 | 프리스케일 세미컨덕터, 인크. | Manufacturing method of semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69418059T2 (en) | METHOD AND DEVICE FOR PRODUCING EXCITED GASES | |
JPS5514839A (en) | Treating method for ion nitriding | |
ZA831884B (en) | Surface hardening process for metal parts | |
SE0200918L (en) | Way to form a chrome-rich layer on the surface of a nickel alloy | |
EP0156378A3 (en) | Method and apparatus for carburizing steel with a gas | |
JPS5588323A (en) | Manufacture of semiconductor device | |
JPS6469017A (en) | Formation of oxynitride film | |
JPS5458637A (en) | Ion nitriding method | |
JPS54104770A (en) | Heat treatment method for 3-5 group compound semiconductor | |
JPS6476727A (en) | Manufacture of semiconductor device | |
JPS5240059A (en) | Process for production of semiconductor device | |
JPS5562162A (en) | Vacuum carburizing method | |
JPS5762537A (en) | Forming method for film | |
JPS57118636A (en) | Manufacture of semiconductor device | |
JPS56112722A (en) | Manufacture of semiconductor device | |
JPS57194522A (en) | Thermal treatment of semiconductor wafer | |
JPS5757448A (en) | Production of shadow mask | |
JPS5286404A (en) | Drying and heat up method bricks of cooling chamber in coke dry quench ing equipment | |
JPS6414927A (en) | Forming method of silicon nitride film or silicon oxynitride film | |
JPS647625A (en) | Treating method for semiconductor substrate | |
JPS5339080A (en) | Sample feeding method | |
JPS5691486A (en) | Manufacture of photoconductive film | |
JPS55125227A (en) | Toughening method of small steel member for case hardening | |
Rie et al. | Plasma Carburizing and Plasma Carbonitriding--an Austenitic Thermomechanical Surface Treatment | |
KR870008783A (en) | Manufacturing method of low carbon content silicon nitride |