JPS6469017A - Formation of oxynitride film - Google Patents

Formation of oxynitride film

Info

Publication number
JPS6469017A
JPS6469017A JP22789787A JP22789787A JPS6469017A JP S6469017 A JPS6469017 A JP S6469017A JP 22789787 A JP22789787 A JP 22789787A JP 22789787 A JP22789787 A JP 22789787A JP S6469017 A JPS6469017 A JP S6469017A
Authority
JP
Japan
Prior art keywords
gas
proportion
ammonia
oxygen
lamp annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22789787A
Other languages
Japanese (ja)
Inventor
Yoshimi Shiotani
Kenichi Hizuya
Yoshihiro Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22789787A priority Critical patent/JPS6469017A/en
Publication of JPS6469017A publication Critical patent/JPS6469017A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make it possible to form a film having precise and uniform thickness on a silicon substrate by means of a lamp annealing apparatus, by employing ammonia and oxygen as reaction gases and substituting these gases with each other while continuously changing proportions of flow rates thereof. CONSTITUTION:A silicon substrate 1 is introduced in a lamp annealing apparatus and disposed on pins 4a of a carrying base 4. Nitrogen gas is then introduced into the lamp annealing apparatus and the temperature within the apparatus is increased to a lamp annealing temperature, With the lapse of treating time, proportion of the nitrogen gas in the introduced gas is decreased gradually while proportion of ammnonia is increased by that much, until all of the introduced gas is occupied by ammonia. Treatment is performed under such conditions so that a silicon nitride film 2 is formed on the surface of the substrate 1. After that, the proportion of ammonia is decreased while the proportion of oxygen gas is increased by that much until all of the introduced gas is occupied by oxygen gas. Treatment is performed within the atmosphere of oxygen so that the silicon nitride film 2 formed with ammonia is converted into an oxynitride film 3. The oxygen gas is then substituted with nitrogen gas and the silicon substrate 1 is taken out of the apparatus.
JP22789787A 1987-09-10 1987-09-10 Formation of oxynitride film Pending JPS6469017A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22789787A JPS6469017A (en) 1987-09-10 1987-09-10 Formation of oxynitride film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22789787A JPS6469017A (en) 1987-09-10 1987-09-10 Formation of oxynitride film

Publications (1)

Publication Number Publication Date
JPS6469017A true JPS6469017A (en) 1989-03-15

Family

ID=16868023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22789787A Pending JPS6469017A (en) 1987-09-10 1987-09-10 Formation of oxynitride film

Country Status (1)

Country Link
JP (1) JPS6469017A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05304146A (en) * 1992-04-28 1993-11-16 Oki Electric Ind Co Ltd Deposition of insulation film
KR100563748B1 (en) * 1997-08-05 2006-08-30 프리스케일 세미컨덕터, 인크. Manufacturing method of semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6260226A (en) * 1985-09-10 1987-03-16 Seiko Epson Corp High speed optical oxidation and nitrification device
JPS63182825A (en) * 1987-01-26 1988-07-28 Hitachi Ltd Formation of insulating film
JPS63237568A (en) * 1987-03-26 1988-10-04 Seiko Instr & Electronics Ltd Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6260226A (en) * 1985-09-10 1987-03-16 Seiko Epson Corp High speed optical oxidation and nitrification device
JPS63182825A (en) * 1987-01-26 1988-07-28 Hitachi Ltd Formation of insulating film
JPS63237568A (en) * 1987-03-26 1988-10-04 Seiko Instr & Electronics Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05304146A (en) * 1992-04-28 1993-11-16 Oki Electric Ind Co Ltd Deposition of insulation film
KR100563748B1 (en) * 1997-08-05 2006-08-30 프리스케일 세미컨덕터, 인크. Manufacturing method of semiconductor device

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