JPS56112722A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56112722A JPS56112722A JP1456480A JP1456480A JPS56112722A JP S56112722 A JPS56112722 A JP S56112722A JP 1456480 A JP1456480 A JP 1456480A JP 1456480 A JP1456480 A JP 1456480A JP S56112722 A JPS56112722 A JP S56112722A
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- diffusing
- layer
- heating
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000001257 hydrogen Substances 0.000 abstract 5
- 229910052739 hydrogen Inorganic materials 0.000 abstract 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 150000002431 hydrogen Chemical class 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 abstract 2
- 239000012159 carrier gas Substances 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
PURPOSE:To obtain a preferably uniform impurity diffusing layer in the semiconductor device by firstly heating an atmosphere containing hydrogen, then introducing an impurity diffusing source in the state that hydrogen is suppressed to conduct the diffusion, then introducing hydrogen, and secondly heating it. CONSTITUTION:Nitrogen, oxygen and hydrogen as reducing gas are introduced at the initial stage of heating treatment. Then, a semiconductor substrate is introduced, heated, boron trichloride as a P type diffusing source, oxygen and nitrogen as carrier gas are introduced at the middle stage, and diffusing treatment is conducted. Hydrogen is further introduced at the final stage so as to prevent the decomposition of the residual boron trichloride, and the semiconductor substrate is heated. Thus, the layer resistance of the P type impurity diffusing layer can become uniform, and the controllability of the layer resistance can be increased.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1456480A JPS56112722A (en) | 1980-02-08 | 1980-02-08 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1456480A JPS56112722A (en) | 1980-02-08 | 1980-02-08 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56112722A true JPS56112722A (en) | 1981-09-05 |
| JPS6249981B2 JPS6249981B2 (en) | 1987-10-22 |
Family
ID=11864643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1456480A Granted JPS56112722A (en) | 1980-02-08 | 1980-02-08 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56112722A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6432830B1 (en) * | 1998-05-15 | 2002-08-13 | Applied Materials, Inc. | Semiconductor fabrication process |
| US7772097B2 (en) | 2007-11-05 | 2010-08-10 | Asm America, Inc. | Methods of selectively depositing silicon-containing films |
| JP2013232529A (en) * | 2012-04-27 | 2013-11-14 | Tokyo Electron Ltd | Method for diffusing impurity, substrate processing device, and method for manufacturing semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5016151A (en) * | 1973-06-15 | 1975-02-20 |
-
1980
- 1980-02-08 JP JP1456480A patent/JPS56112722A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5016151A (en) * | 1973-06-15 | 1975-02-20 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6432830B1 (en) * | 1998-05-15 | 2002-08-13 | Applied Materials, Inc. | Semiconductor fabrication process |
| US7772097B2 (en) | 2007-11-05 | 2010-08-10 | Asm America, Inc. | Methods of selectively depositing silicon-containing films |
| JP2013232529A (en) * | 2012-04-27 | 2013-11-14 | Tokyo Electron Ltd | Method for diffusing impurity, substrate processing device, and method for manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6249981B2 (en) | 1987-10-22 |
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