JPS57132358A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57132358A JPS57132358A JP1771381A JP1771381A JPS57132358A JP S57132358 A JPS57132358 A JP S57132358A JP 1771381 A JP1771381 A JP 1771381A JP 1771381 A JP1771381 A JP 1771381A JP S57132358 A JPS57132358 A JP S57132358A
- Authority
- JP
- Japan
- Prior art keywords
- type
- diffusion
- oxygen gas
- emitter region
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 4
- 229910001882 dioxygen Inorganic materials 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 239000007789 gas Substances 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 229910001385 heavy metal Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To suppress the diffusion of an emitter region by a method wherein the oxygen gas concentration in an atmosphere is reduced when a diffusion process is performed on a main conductor substrate made of heavy metal. CONSTITUTION:A P type base region 3 is formed on an N<-> type collector region which was formed on a P type main conductor substrate 1, and a transistor structure is obtained by forming an N<+> type emitter region 4 on the P type base region 3. Then, after gold layer 8 has been formed by evaporation on the reverse side of the P type semiconductor substrate 1, gold is diffused in the semiconductor substrate by performing a heat treatment in the mixed gas atmosphere of oxygen gas and nitride gas. The diffusion of the emitter region 4 which is carried out by the heat treatment is suppressed in proportion to the decrease of percentage of the oxygen gas contained in the mixed gas, and by bringing the oxygen gas concentration below 10%, the diffusion of the emitter region 4 can be suppressed sufficiently.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1771381A JPS57132358A (en) | 1981-02-09 | 1981-02-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1771381A JPS57132358A (en) | 1981-02-09 | 1981-02-09 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57132358A true JPS57132358A (en) | 1982-08-16 |
JPH0241168B2 JPH0241168B2 (en) | 1990-09-14 |
Family
ID=11951388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1771381A Granted JPS57132358A (en) | 1981-02-09 | 1981-02-09 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57132358A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5110070A (en) * | 1974-07-13 | 1976-01-27 | Shizuoka Seiki Co Ltd | JUNKANGATAKOKUMOTSUKANSOKI |
JPS55102266A (en) * | 1979-01-31 | 1980-08-05 | Fujitsu Ltd | Fabricating method of semiconductor device |
JPS55125625A (en) * | 1979-03-23 | 1980-09-27 | Nec Corp | Diffusion of impurity |
-
1981
- 1981-02-09 JP JP1771381A patent/JPS57132358A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5110070A (en) * | 1974-07-13 | 1976-01-27 | Shizuoka Seiki Co Ltd | JUNKANGATAKOKUMOTSUKANSOKI |
JPS55102266A (en) * | 1979-01-31 | 1980-08-05 | Fujitsu Ltd | Fabricating method of semiconductor device |
JPS55125625A (en) * | 1979-03-23 | 1980-09-27 | Nec Corp | Diffusion of impurity |
Also Published As
Publication number | Publication date |
---|---|
JPH0241168B2 (en) | 1990-09-14 |
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