JPS57132358A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57132358A
JPS57132358A JP1771381A JP1771381A JPS57132358A JP S57132358 A JPS57132358 A JP S57132358A JP 1771381 A JP1771381 A JP 1771381A JP 1771381 A JP1771381 A JP 1771381A JP S57132358 A JPS57132358 A JP S57132358A
Authority
JP
Japan
Prior art keywords
type
diffusion
oxygen gas
emitter region
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1771381A
Other languages
Japanese (ja)
Other versions
JPH0241168B2 (en
Inventor
Kenichiro Kaneko
Mitsuhiko Kanbayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1771381A priority Critical patent/JPS57132358A/en
Publication of JPS57132358A publication Critical patent/JPS57132358A/en
Publication of JPH0241168B2 publication Critical patent/JPH0241168B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To suppress the diffusion of an emitter region by a method wherein the oxygen gas concentration in an atmosphere is reduced when a diffusion process is performed on a main conductor substrate made of heavy metal. CONSTITUTION:A P type base region 3 is formed on an N<-> type collector region which was formed on a P type main conductor substrate 1, and a transistor structure is obtained by forming an N<+> type emitter region 4 on the P type base region 3. Then, after gold layer 8 has been formed by evaporation on the reverse side of the P type semiconductor substrate 1, gold is diffused in the semiconductor substrate by performing a heat treatment in the mixed gas atmosphere of oxygen gas and nitride gas. The diffusion of the emitter region 4 which is carried out by the heat treatment is suppressed in proportion to the decrease of percentage of the oxygen gas contained in the mixed gas, and by bringing the oxygen gas concentration below 10%, the diffusion of the emitter region 4 can be suppressed sufficiently.
JP1771381A 1981-02-09 1981-02-09 Manufacture of semiconductor device Granted JPS57132358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1771381A JPS57132358A (en) 1981-02-09 1981-02-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1771381A JPS57132358A (en) 1981-02-09 1981-02-09 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57132358A true JPS57132358A (en) 1982-08-16
JPH0241168B2 JPH0241168B2 (en) 1990-09-14

Family

ID=11951388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1771381A Granted JPS57132358A (en) 1981-02-09 1981-02-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57132358A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5110070A (en) * 1974-07-13 1976-01-27 Shizuoka Seiki Co Ltd JUNKANGATAKOKUMOTSUKANSOKI
JPS55102266A (en) * 1979-01-31 1980-08-05 Fujitsu Ltd Fabricating method of semiconductor device
JPS55125625A (en) * 1979-03-23 1980-09-27 Nec Corp Diffusion of impurity

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5110070A (en) * 1974-07-13 1976-01-27 Shizuoka Seiki Co Ltd JUNKANGATAKOKUMOTSUKANSOKI
JPS55102266A (en) * 1979-01-31 1980-08-05 Fujitsu Ltd Fabricating method of semiconductor device
JPS55125625A (en) * 1979-03-23 1980-09-27 Nec Corp Diffusion of impurity

Also Published As

Publication number Publication date
JPH0241168B2 (en) 1990-09-14

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