JPS5732647A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5732647A
JPS5732647A JP10734680A JP10734680A JPS5732647A JP S5732647 A JPS5732647 A JP S5732647A JP 10734680 A JP10734680 A JP 10734680A JP 10734680 A JP10734680 A JP 10734680A JP S5732647 A JPS5732647 A JP S5732647A
Authority
JP
Japan
Prior art keywords
hfe
emitter
wafer
diffused
measured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10734680A
Other languages
Japanese (ja)
Inventor
Kenichiro Kaneko
Masaaki Kobayashi
Mitsuhiko Kanbayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10734680A priority Critical patent/JPS5732647A/en
Publication of JPS5732647A publication Critical patent/JPS5732647A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Abstract

PURPOSE:To evaluate a condition of a currrent amplification factor hFE accurately by a method wherein an emitter is diffused, a wafer is thermally treated in a reducing atmosphere and the current amplification factor hFE is measured in the manufacture of the semiconductor device including a process growing polysilicon after the emitter is diffused. CONSTITUTION:In order to avoid the higher shifting of the hFE II of the completed wafer formed through a polysilicon growth process in a H2 gas than the current amplification factor hFE I measured after the emitter is diffused in the wafer, the hFE is not measured after the emitter is diffused, the sample wafer is further treated thermally in the H2 gas, and the hFE III measured is the same as the hFE II after a wafer process is completed. A condition of emitter diffusion is set on the basis of the hFE. Accordingly, the condition of the current amplification factor of a bipolar type IC is evaluated accurately.
JP10734680A 1980-08-05 1980-08-05 Manufacture of semiconductor device Pending JPS5732647A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10734680A JPS5732647A (en) 1980-08-05 1980-08-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10734680A JPS5732647A (en) 1980-08-05 1980-08-05 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5732647A true JPS5732647A (en) 1982-02-22

Family

ID=14456716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10734680A Pending JPS5732647A (en) 1980-08-05 1980-08-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5732647A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120085271A (en) * 2009-09-30 2012-07-31 다우 글로벌 테크놀로지스 엘엘씨 Acetylated glycerin esters and their blends with epoxidized fatty acid esters
CN103943531A (en) * 2014-04-22 2014-07-23 上海华力微电子有限公司 Method for monitoring auto-doping boron concentration in germanium-silicon process on line

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120085271A (en) * 2009-09-30 2012-07-31 다우 글로벌 테크놀로지스 엘엘씨 Acetylated glycerin esters and their blends with epoxidized fatty acid esters
CN103943531A (en) * 2014-04-22 2014-07-23 上海华力微电子有限公司 Method for monitoring auto-doping boron concentration in germanium-silicon process on line

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