JPS6430268A - Bipolar transistor and manufacture thereof - Google Patents
Bipolar transistor and manufacture thereofInfo
- Publication number
- JPS6430268A JPS6430268A JP18618187A JP18618187A JPS6430268A JP S6430268 A JPS6430268 A JP S6430268A JP 18618187 A JP18618187 A JP 18618187A JP 18618187 A JP18618187 A JP 18618187A JP S6430268 A JPS6430268 A JP S6430268A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- implanted
- collector
- emitter
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To get rid of the stray capacitance in an outer base region by a method wherein ions are implanted just under an outer base region of a lead-out section of a base electrode adjacent to both sides of an emitter layer so as to penetrate from a collector layer through a collector contact layer thereunder and further reach a semi-insulating substrate. CONSTITUTION:A collector layer 32, a collector layer 33, a base layer 34, an emitter layer 35, and an emitter contact layer 36 are successively formed on a semi-insulating gallium arsenide substrate 31 through the film growth, and oxygen ions are implanted into the peripheral region so as to reach the collector layer 33 for the formation of an implanted layer 71. Next, a dummy emitter 75 is formed into a narrow and long form to bestride the implanted layer 71 through the use of a silicon oxide film, oxygen ions are deeply implanted to penetrate through the base layer 34 and reach to the substrate 31 from the collector layer 33 for the formation of an oxygen ion implanted layer 72. Then, a pattern formation of a region where a collector electrode is formed is performed. In addition, a hydrogen ion implanted layer 73 is formed to isolate the element for the formation of a base electrode 84.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62186181A JPH0824126B2 (en) | 1987-07-24 | 1987-07-24 | Bipolar transistor and manufacturing method thereof |
EP88306729A EP0300803B1 (en) | 1987-07-24 | 1988-07-22 | High-frequency bipolar transistor and its fabrication method |
DE3850309T DE3850309T2 (en) | 1987-07-24 | 1988-07-22 | High-frequency bipolar transistor and its manufacturing process. |
US07/570,958 US5147775A (en) | 1987-07-24 | 1990-08-21 | Method of fabricating a high-frequency bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62186181A JPH0824126B2 (en) | 1987-07-24 | 1987-07-24 | Bipolar transistor and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6430268A true JPS6430268A (en) | 1989-02-01 |
JPH0824126B2 JPH0824126B2 (en) | 1996-03-06 |
Family
ID=16183807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62186181A Expired - Fee Related JPH0824126B2 (en) | 1987-07-24 | 1987-07-24 | Bipolar transistor and manufacturing method thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0824126B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5523894A (en) * | 1991-04-09 | 1996-06-04 | Kabushiki Kaisha Matsuyama Seisakusho | Mirror holder support structure for automobile rearview mirror assembly |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59210669A (en) * | 1982-09-17 | 1984-11-29 | フランス国 | Hetero junction bipolar semiconductor device and method of producing same |
JPS6095969A (en) * | 1983-10-31 | 1985-05-29 | Matsushita Electronics Corp | Manufacture of semiconductor integrated circuit |
JPS6249662A (en) * | 1985-08-29 | 1987-03-04 | Matsushita Electric Ind Co Ltd | Heterojunction bipolar transistor and manufacture thereof |
-
1987
- 1987-07-24 JP JP62186181A patent/JPH0824126B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59210669A (en) * | 1982-09-17 | 1984-11-29 | フランス国 | Hetero junction bipolar semiconductor device and method of producing same |
JPS6095969A (en) * | 1983-10-31 | 1985-05-29 | Matsushita Electronics Corp | Manufacture of semiconductor integrated circuit |
JPS6249662A (en) * | 1985-08-29 | 1987-03-04 | Matsushita Electric Ind Co Ltd | Heterojunction bipolar transistor and manufacture thereof |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5523894A (en) * | 1991-04-09 | 1996-06-04 | Kabushiki Kaisha Matsuyama Seisakusho | Mirror holder support structure for automobile rearview mirror assembly |
Also Published As
Publication number | Publication date |
---|---|
JPH0824126B2 (en) | 1996-03-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5758356A (en) | Manufacture of semiconductor device | |
JPS56131954A (en) | Semiconductor device | |
JPS6430268A (en) | Bipolar transistor and manufacture thereof | |
JPS6430267A (en) | Bipolar transistor and manufacture thereof | |
JPS6430269A (en) | Manufacture of bipolar transistor | |
JPS6430266A (en) | Manufacture of bipolar transistor | |
JPS6430265A (en) | Manufacture of bipolar transistor | |
JPS5788769A (en) | Semiconductor device | |
JPS554973A (en) | Lateral injection type transistor | |
JPS5752162A (en) | Semiconductor device | |
JPS54151379A (en) | Manufactue for semiconductor device | |
JPS6446974A (en) | Manufacture of semiconductor device | |
JPS5784169A (en) | Lateral transistor | |
JPS5556643A (en) | Manufacture of semiconductor device | |
JPS53123673A (en) | Manufacture of semiconductor device | |
JPS5693315A (en) | Manufacture of semiconductor device | |
JPS57162460A (en) | Manufacture of semiconductor device | |
JPS57173956A (en) | Manufacture of semiconductor device | |
JPS5610959A (en) | Manufacture of semiconductor device | |
JPS5710964A (en) | Manufacture of semiconductor device | |
JPS5443689A (en) | Production of semiconductor integrated circuit unit | |
JPS5633844A (en) | Semiconductor device and manufacture therefor | |
JPS5737882A (en) | Compound semiconductor device and production thereof | |
JPS56157054A (en) | Manufacture of semiconductor ic | |
JPS5754366A (en) | Manufacture of semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |