JPS6430268A - Bipolar transistor and manufacture thereof - Google Patents

Bipolar transistor and manufacture thereof

Info

Publication number
JPS6430268A
JPS6430268A JP18618187A JP18618187A JPS6430268A JP S6430268 A JPS6430268 A JP S6430268A JP 18618187 A JP18618187 A JP 18618187A JP 18618187 A JP18618187 A JP 18618187A JP S6430268 A JPS6430268 A JP S6430268A
Authority
JP
Japan
Prior art keywords
layer
implanted
collector
emitter
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18618187A
Other languages
Japanese (ja)
Other versions
JPH0824126B2 (en
Inventor
Toshimichi Ota
Masaki Inada
Manabu Yanagihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62186181A priority Critical patent/JPH0824126B2/en
Priority to EP88306729A priority patent/EP0300803B1/en
Priority to DE3850309T priority patent/DE3850309T2/en
Publication of JPS6430268A publication Critical patent/JPS6430268A/en
Priority to US07/570,958 priority patent/US5147775A/en
Publication of JPH0824126B2 publication Critical patent/JPH0824126B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To get rid of the stray capacitance in an outer base region by a method wherein ions are implanted just under an outer base region of a lead-out section of a base electrode adjacent to both sides of an emitter layer so as to penetrate from a collector layer through a collector contact layer thereunder and further reach a semi-insulating substrate. CONSTITUTION:A collector layer 32, a collector layer 33, a base layer 34, an emitter layer 35, and an emitter contact layer 36 are successively formed on a semi-insulating gallium arsenide substrate 31 through the film growth, and oxygen ions are implanted into the peripheral region so as to reach the collector layer 33 for the formation of an implanted layer 71. Next, a dummy emitter 75 is formed into a narrow and long form to bestride the implanted layer 71 through the use of a silicon oxide film, oxygen ions are deeply implanted to penetrate through the base layer 34 and reach to the substrate 31 from the collector layer 33 for the formation of an oxygen ion implanted layer 72. Then, a pattern formation of a region where a collector electrode is formed is performed. In addition, a hydrogen ion implanted layer 73 is formed to isolate the element for the formation of a base electrode 84.
JP62186181A 1987-07-24 1987-07-24 Bipolar transistor and manufacturing method thereof Expired - Fee Related JPH0824126B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP62186181A JPH0824126B2 (en) 1987-07-24 1987-07-24 Bipolar transistor and manufacturing method thereof
EP88306729A EP0300803B1 (en) 1987-07-24 1988-07-22 High-frequency bipolar transistor and its fabrication method
DE3850309T DE3850309T2 (en) 1987-07-24 1988-07-22 High-frequency bipolar transistor and its manufacturing process.
US07/570,958 US5147775A (en) 1987-07-24 1990-08-21 Method of fabricating a high-frequency bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62186181A JPH0824126B2 (en) 1987-07-24 1987-07-24 Bipolar transistor and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPS6430268A true JPS6430268A (en) 1989-02-01
JPH0824126B2 JPH0824126B2 (en) 1996-03-06

Family

ID=16183807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62186181A Expired - Fee Related JPH0824126B2 (en) 1987-07-24 1987-07-24 Bipolar transistor and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JPH0824126B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523894A (en) * 1991-04-09 1996-06-04 Kabushiki Kaisha Matsuyama Seisakusho Mirror holder support structure for automobile rearview mirror assembly

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59210669A (en) * 1982-09-17 1984-11-29 フランス国 Hetero junction bipolar semiconductor device and method of producing same
JPS6095969A (en) * 1983-10-31 1985-05-29 Matsushita Electronics Corp Manufacture of semiconductor integrated circuit
JPS6249662A (en) * 1985-08-29 1987-03-04 Matsushita Electric Ind Co Ltd Heterojunction bipolar transistor and manufacture thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59210669A (en) * 1982-09-17 1984-11-29 フランス国 Hetero junction bipolar semiconductor device and method of producing same
JPS6095969A (en) * 1983-10-31 1985-05-29 Matsushita Electronics Corp Manufacture of semiconductor integrated circuit
JPS6249662A (en) * 1985-08-29 1987-03-04 Matsushita Electric Ind Co Ltd Heterojunction bipolar transistor and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523894A (en) * 1991-04-09 1996-06-04 Kabushiki Kaisha Matsuyama Seisakusho Mirror holder support structure for automobile rearview mirror assembly

Also Published As

Publication number Publication date
JPH0824126B2 (en) 1996-03-06

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees