JPS6430266A - Manufacture of bipolar transistor - Google Patents

Manufacture of bipolar transistor

Info

Publication number
JPS6430266A
JPS6430266A JP18617487A JP18617487A JPS6430266A JP S6430266 A JPS6430266 A JP S6430266A JP 18617487 A JP18617487 A JP 18617487A JP 18617487 A JP18617487 A JP 18617487A JP S6430266 A JPS6430266 A JP S6430266A
Authority
JP
Japan
Prior art keywords
layer
type impurity
collector
electrode
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18617487A
Other languages
Japanese (ja)
Other versions
JPH0824124B2 (en
Inventor
Toshimichi Ota
Masaki Inada
Manabu Yanagihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62186174A priority Critical patent/JPH0824124B2/en
Publication of JPS6430266A publication Critical patent/JPS6430266A/en
Publication of JPH0824124B2 publication Critical patent/JPH0824124B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To get rid of the stray capacitance just under an outer base region by a method wherein a collector electrode is led out in the same or the opposite direction of a lead-out of an emitter electrode. CONSTITUTION:An collector layer 62 containing high concentrated n-type impurity and a collector layer 63 containing n-type impurity are successively formed on a semi-insulating gallium arsenide substrate 61 through the film growth, oxygen ions are implanted into the peripheral region of them so as to reach the semi-insulating gallium arsenide substrate 61 for the formation of an oxygen ion implanted layer 72. Next, a base layer 64 including high concentrated p-type impurity, an emitter 65 containing n-type impurity, and an emitter contact layer 66 containing high concentrated n-type impurity are successively formed through the film growth, oxygen ions are implanted into the peripheral region so as to reach the oxygen implanted layer 72 for the formation of an oxygen ion implanted layer 71. Then, an emitter electrode 86 is formed so as to overlap the collector layer 63, a collector electrode 62 is formed on the opposite side of the direction in which the emitter electrode 86 is led out, and then a base electrode 84 is formed. By these processes, a transistor is rid of the stray capacitance just under an outer base region and the capacitance between a base and a collector can be made to be the least in this structure.
JP62186174A 1987-07-24 1987-07-24 Method for manufacturing bipolar transistor Expired - Lifetime JPH0824124B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62186174A JPH0824124B2 (en) 1987-07-24 1987-07-24 Method for manufacturing bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62186174A JPH0824124B2 (en) 1987-07-24 1987-07-24 Method for manufacturing bipolar transistor

Publications (2)

Publication Number Publication Date
JPS6430266A true JPS6430266A (en) 1989-02-01
JPH0824124B2 JPH0824124B2 (en) 1996-03-06

Family

ID=16183685

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62186174A Expired - Lifetime JPH0824124B2 (en) 1987-07-24 1987-07-24 Method for manufacturing bipolar transistor

Country Status (1)

Country Link
JP (1) JPH0824124B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0353792U (en) * 1989-09-27 1991-05-24

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59210669A (en) * 1982-09-17 1984-11-29 フランス国 Hetero junction bipolar semiconductor device and method of producing same
JPS6095969A (en) * 1983-10-31 1985-05-29 Matsushita Electronics Corp Manufacture of semiconductor integrated circuit
JPS6247158A (en) * 1985-08-26 1987-02-28 Matsushita Electric Ind Co Ltd Hetero junction bipolar transistor and manufacture thereof
JPS6249662A (en) * 1985-08-29 1987-03-04 Matsushita Electric Ind Co Ltd Heterojunction bipolar transistor and manufacture thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59210669A (en) * 1982-09-17 1984-11-29 フランス国 Hetero junction bipolar semiconductor device and method of producing same
JPS6095969A (en) * 1983-10-31 1985-05-29 Matsushita Electronics Corp Manufacture of semiconductor integrated circuit
JPS6247158A (en) * 1985-08-26 1987-02-28 Matsushita Electric Ind Co Ltd Hetero junction bipolar transistor and manufacture thereof
JPS6249662A (en) * 1985-08-29 1987-03-04 Matsushita Electric Ind Co Ltd Heterojunction bipolar transistor and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0353792U (en) * 1989-09-27 1991-05-24

Also Published As

Publication number Publication date
JPH0824124B2 (en) 1996-03-06

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