JPS6430266A - Manufacture of bipolar transistor - Google Patents
Manufacture of bipolar transistorInfo
- Publication number
- JPS6430266A JPS6430266A JP18617487A JP18617487A JPS6430266A JP S6430266 A JPS6430266 A JP S6430266A JP 18617487 A JP18617487 A JP 18617487A JP 18617487 A JP18617487 A JP 18617487A JP S6430266 A JPS6430266 A JP S6430266A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type impurity
- collector
- electrode
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To get rid of the stray capacitance just under an outer base region by a method wherein a collector electrode is led out in the same or the opposite direction of a lead-out of an emitter electrode. CONSTITUTION:An collector layer 62 containing high concentrated n-type impurity and a collector layer 63 containing n-type impurity are successively formed on a semi-insulating gallium arsenide substrate 61 through the film growth, oxygen ions are implanted into the peripheral region of them so as to reach the semi-insulating gallium arsenide substrate 61 for the formation of an oxygen ion implanted layer 72. Next, a base layer 64 including high concentrated p-type impurity, an emitter 65 containing n-type impurity, and an emitter contact layer 66 containing high concentrated n-type impurity are successively formed through the film growth, oxygen ions are implanted into the peripheral region so as to reach the oxygen implanted layer 72 for the formation of an oxygen ion implanted layer 71. Then, an emitter electrode 86 is formed so as to overlap the collector layer 63, a collector electrode 62 is formed on the opposite side of the direction in which the emitter electrode 86 is led out, and then a base electrode 84 is formed. By these processes, a transistor is rid of the stray capacitance just under an outer base region and the capacitance between a base and a collector can be made to be the least in this structure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62186174A JPH0824124B2 (en) | 1987-07-24 | 1987-07-24 | Method for manufacturing bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62186174A JPH0824124B2 (en) | 1987-07-24 | 1987-07-24 | Method for manufacturing bipolar transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6430266A true JPS6430266A (en) | 1989-02-01 |
JPH0824124B2 JPH0824124B2 (en) | 1996-03-06 |
Family
ID=16183685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62186174A Expired - Lifetime JPH0824124B2 (en) | 1987-07-24 | 1987-07-24 | Method for manufacturing bipolar transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0824124B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0353792U (en) * | 1989-09-27 | 1991-05-24 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59210669A (en) * | 1982-09-17 | 1984-11-29 | フランス国 | Hetero junction bipolar semiconductor device and method of producing same |
JPS6095969A (en) * | 1983-10-31 | 1985-05-29 | Matsushita Electronics Corp | Manufacture of semiconductor integrated circuit |
JPS6247158A (en) * | 1985-08-26 | 1987-02-28 | Matsushita Electric Ind Co Ltd | Hetero junction bipolar transistor and manufacture thereof |
JPS6249662A (en) * | 1985-08-29 | 1987-03-04 | Matsushita Electric Ind Co Ltd | Heterojunction bipolar transistor and manufacture thereof |
-
1987
- 1987-07-24 JP JP62186174A patent/JPH0824124B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59210669A (en) * | 1982-09-17 | 1984-11-29 | フランス国 | Hetero junction bipolar semiconductor device and method of producing same |
JPS6095969A (en) * | 1983-10-31 | 1985-05-29 | Matsushita Electronics Corp | Manufacture of semiconductor integrated circuit |
JPS6247158A (en) * | 1985-08-26 | 1987-02-28 | Matsushita Electric Ind Co Ltd | Hetero junction bipolar transistor and manufacture thereof |
JPS6249662A (en) * | 1985-08-29 | 1987-03-04 | Matsushita Electric Ind Co Ltd | Heterojunction bipolar transistor and manufacture thereof |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0353792U (en) * | 1989-09-27 | 1991-05-24 |
Also Published As
Publication number | Publication date |
---|---|
JPH0824124B2 (en) | 1996-03-06 |
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