JPS6465834A - Manufacture of compound semiconductor device - Google Patents

Abstract

PURPOSE:To selectively form ion implanted regions and an epitaxial layer on a substrate in simple process by a method wherein the activation of ion implanted regions and the formation of an epitaxial layer are continuously performed in a single epitaxial growing device. CONSTITUTION:A GaInAs layer 2 is formed on the surface of an InP single crystal substrate 1 to form a compound semiconductor substrate 3. Next, p type impurity is ion-implanted in a photodetector forming region 4p while n type impurity is ion-implanted in the same region 4n. Later, these impurity ions are led in the substrate 3 epitaxial growing device to activate the ion implanted regions 4p, 4n by annealing process. Through these procedures, the regions 4p, 4n are changed into a p type active region 4p' and an n type active region 4n'. Successively, an epitaxial layer 5 is selectively formed on the substrate 3 to be a transistor forming region. Through these procedures, the compound semiconductor device selectively formed of the ion implanted regions 4p, 4n and the epitaxial layer 5 can be manufactured in simple process and excellent yield.