JPS6465834A - Manufacture of compound semiconductor device - Google Patents
Manufacture of compound semiconductor deviceInfo
- Publication number
- JPS6465834A JPS6465834A JP22337487A JP22337487A JPS6465834A JP S6465834 A JPS6465834 A JP S6465834A JP 22337487 A JP22337487 A JP 22337487A JP 22337487 A JP22337487 A JP 22337487A JP S6465834 A JPS6465834 A JP S6465834A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- ion
- epitaxial layer
- compound semiconductor
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To selectively form ion implanted regions and an epitaxial layer on a substrate in simple process by a method wherein the activation of ion implanted regions and the formation of an epitaxial layer are continuously performed in a single epitaxial growing device. CONSTITUTION:A GaInAs layer 2 is formed on the surface of an InP single crystal substrate 1 to form a compound semiconductor substrate 3. Next, p type impurity is ion-implanted in a photodetector forming region 4p while n type impurity is ion-implanted in the same region 4n. Later, these impurity ions are led in the substrate 3 epitaxial growing device to activate the ion implanted regions 4p, 4n by annealing process. Through these procedures, the regions 4p, 4n are changed into a p type active region 4p' and an n type active region 4n'. Successively, an epitaxial layer 5 is selectively formed on the substrate 3 to be a transistor forming region. Through these procedures, the compound semiconductor device selectively formed of the ion implanted regions 4p, 4n and the epitaxial layer 5 can be manufactured in simple process and excellent yield.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22337487A JPS6465834A (en) | 1987-09-07 | 1987-09-07 | Manufacture of compound semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22337487A JPS6465834A (en) | 1987-09-07 | 1987-09-07 | Manufacture of compound semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6465834A true JPS6465834A (en) | 1989-03-13 |
Family
ID=16797143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22337487A Pending JPS6465834A (en) | 1987-09-07 | 1987-09-07 | Manufacture of compound semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6465834A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120258583A1 (en) * | 2011-04-11 | 2012-10-11 | Varian Semiconductor Equipment Associates, Inc. | Method for epitaxial layer overgrowth |
-
1987
- 1987-09-07 JP JP22337487A patent/JPS6465834A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120258583A1 (en) * | 2011-04-11 | 2012-10-11 | Varian Semiconductor Equipment Associates, Inc. | Method for epitaxial layer overgrowth |
US8969181B2 (en) * | 2011-04-11 | 2015-03-03 | Varian Semiconductor Equipment Associates, Inc. | Method for epitaxial layer overgrowth |
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