JPS6477960A - Manufacture of light-electron integrated circuit - Google Patents

Manufacture of light-electron integrated circuit

Info

Publication number
JPS6477960A
JPS6477960A JP62235515A JP23551587A JPS6477960A JP S6477960 A JPS6477960 A JP S6477960A JP 62235515 A JP62235515 A JP 62235515A JP 23551587 A JP23551587 A JP 23551587A JP S6477960 A JPS6477960 A JP S6477960A
Authority
JP
Japan
Prior art keywords
recessed part
layer
etching
sides
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62235515A
Other languages
Japanese (ja)
Inventor
Shuichi Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62235515A priority Critical patent/JPS6477960A/en
Publication of JPS6477960A publication Critical patent/JPS6477960A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To make a process of removing an epitaxial layer outside an element formation region needless and to reduce the etching treatment time, by forming a recessed part on a semi-insulating InP substrate, performing selective etching by anisotropic liquid phase etching and filling a groove by anisotropic epitaxial growth of a Ga1-xInxAs layer. CONSTITUTION:The surface of a semiconductor insulating InP substrate 10 is coated with an SiO2 mask 21 and a window having the long side in the direction of <011> is opened so as to perform selective etching. A recessed part 22 having the base (100) and the sides (-11-1) and (-1-11) is formed. Ion implantation is performed thereinto in order to lead n-type impurities of high concentration into the base and the sides of the recessed part. A Ga0.47In0.53As layer 13 is made to epitaxially grow. The Ga0.47In0.53As layer 12 is piled up so as to bury the recessed part 22.
JP62235515A 1987-09-18 1987-09-18 Manufacture of light-electron integrated circuit Pending JPS6477960A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62235515A JPS6477960A (en) 1987-09-18 1987-09-18 Manufacture of light-electron integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62235515A JPS6477960A (en) 1987-09-18 1987-09-18 Manufacture of light-electron integrated circuit

Publications (1)

Publication Number Publication Date
JPS6477960A true JPS6477960A (en) 1989-03-23

Family

ID=16987129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62235515A Pending JPS6477960A (en) 1987-09-18 1987-09-18 Manufacture of light-electron integrated circuit

Country Status (1)

Country Link
JP (1) JPS6477960A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681701A (en) * 2012-09-24 2014-03-26 上海天马微电子有限公司 Photoelectric conversion element, X-ray flat plate detection device and manufacturing method of X-ray flat plate detection device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61171176A (en) * 1985-01-25 1986-08-01 Nec Corp Manufacture of photoconductive semiconductor light receiving element
JPS61226952A (en) * 1985-03-31 1986-10-08 Nec Corp Monolithic integrated light-receiving element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61171176A (en) * 1985-01-25 1986-08-01 Nec Corp Manufacture of photoconductive semiconductor light receiving element
JPS61226952A (en) * 1985-03-31 1986-10-08 Nec Corp Monolithic integrated light-receiving element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681701A (en) * 2012-09-24 2014-03-26 上海天马微电子有限公司 Photoelectric conversion element, X-ray flat plate detection device and manufacturing method of X-ray flat plate detection device

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