JPS6477960A - Manufacture of light-electron integrated circuit - Google Patents
Manufacture of light-electron integrated circuitInfo
- Publication number
- JPS6477960A JPS6477960A JP62235515A JP23551587A JPS6477960A JP S6477960 A JPS6477960 A JP S6477960A JP 62235515 A JP62235515 A JP 62235515A JP 23551587 A JP23551587 A JP 23551587A JP S6477960 A JPS6477960 A JP S6477960A
- Authority
- JP
- Japan
- Prior art keywords
- recessed part
- layer
- etching
- sides
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Junction Field-Effect Transistors (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To make a process of removing an epitaxial layer outside an element formation region needless and to reduce the etching treatment time, by forming a recessed part on a semi-insulating InP substrate, performing selective etching by anisotropic liquid phase etching and filling a groove by anisotropic epitaxial growth of a Ga1-xInxAs layer. CONSTITUTION:The surface of a semiconductor insulating InP substrate 10 is coated with an SiO2 mask 21 and a window having the long side in the direction of <011> is opened so as to perform selective etching. A recessed part 22 having the base (100) and the sides (-11-1) and (-1-11) is formed. Ion implantation is performed thereinto in order to lead n-type impurities of high concentration into the base and the sides of the recessed part. A Ga0.47In0.53As layer 13 is made to epitaxially grow. The Ga0.47In0.53As layer 12 is piled up so as to bury the recessed part 22.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62235515A JPS6477960A (en) | 1987-09-18 | 1987-09-18 | Manufacture of light-electron integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62235515A JPS6477960A (en) | 1987-09-18 | 1987-09-18 | Manufacture of light-electron integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6477960A true JPS6477960A (en) | 1989-03-23 |
Family
ID=16987129
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62235515A Pending JPS6477960A (en) | 1987-09-18 | 1987-09-18 | Manufacture of light-electron integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6477960A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103681701A (en) * | 2012-09-24 | 2014-03-26 | 上海天马微电子有限公司 | Photoelectric conversion element, X-ray flat plate detection device and manufacturing method of X-ray flat plate detection device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61171176A (en) * | 1985-01-25 | 1986-08-01 | Nec Corp | Manufacture of photoconductive semiconductor light receiving element |
JPS61226952A (en) * | 1985-03-31 | 1986-10-08 | Nec Corp | Monolithic integrated light-receiving element |
-
1987
- 1987-09-18 JP JP62235515A patent/JPS6477960A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61171176A (en) * | 1985-01-25 | 1986-08-01 | Nec Corp | Manufacture of photoconductive semiconductor light receiving element |
JPS61226952A (en) * | 1985-03-31 | 1986-10-08 | Nec Corp | Monolithic integrated light-receiving element |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103681701A (en) * | 2012-09-24 | 2014-03-26 | 上海天马微电子有限公司 | Photoelectric conversion element, X-ray flat plate detection device and manufacturing method of X-ray flat plate detection device |
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