JPS5563839A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS5563839A
JPS5563839A JP13732478A JP13732478A JPS5563839A JP S5563839 A JPS5563839 A JP S5563839A JP 13732478 A JP13732478 A JP 13732478A JP 13732478 A JP13732478 A JP 13732478A JP S5563839 A JPS5563839 A JP S5563839A
Authority
JP
Japan
Prior art keywords
epitaxial layer
bipolar transistor
layer
coexistence
polymerized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13732478A
Other languages
Japanese (ja)
Inventor
Minoru Taguchi
Hajime Sasaki
Akihiko Furukawa
Koichi Kanzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13732478A priority Critical patent/JPS5563839A/en
Publication of JPS5563839A publication Critical patent/JPS5563839A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To enable the coexistence of a bipolar transistor and a I<2>L by providing a step on the surface of an epitaxial layer and etching it, thereby improving a current amplification factor. CONSTITUTION:An epitaxial layer 2 is grown on a p-type substrate 1 through an n<+> embedded layer 4, and after forming a pattern of oxide film 12, it is again subjected to epitaxial growth. The growth on the oxide film 12 is turned into a poly crystal Si 14 (a). And then, a layer 14 polymerized with a HF family etching liquid is selectively etched. Since the etching rate in the polymerized Si is fast, a stap is formed during this process (b). After forming a I<2>L on the thinner portion of the epitaxial layer as well as a conventional bipolar transistor on the thick portion thereof (c), electrodes 13 are provided (d). Like these, the thickness of the epitaxial layer of I<2>L can be made thinner and arbitrarily selected, so that the current amplification factor of I<2>L can be greatly improved on one hand, and the high dielectric strength of the bipolar transistor can be maintained on the other hand. Thus, the coexistence of two elements can be allowed.
JP13732478A 1978-11-09 1978-11-09 Manufacture of semiconductor integrated circuit Pending JPS5563839A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13732478A JPS5563839A (en) 1978-11-09 1978-11-09 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13732478A JPS5563839A (en) 1978-11-09 1978-11-09 Manufacture of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5563839A true JPS5563839A (en) 1980-05-14

Family

ID=15196006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13732478A Pending JPS5563839A (en) 1978-11-09 1978-11-09 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5563839A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4882294A (en) * 1988-08-17 1989-11-21 Delco Electronics Corporation Process for forming an epitaxial layer having portions of different thicknesses

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4882294A (en) * 1988-08-17 1989-11-21 Delco Electronics Corporation Process for forming an epitaxial layer having portions of different thicknesses

Similar Documents

Publication Publication Date Title
JPS5269587A (en) Device and manufacture for high voltage resisting semiconductor
JPS6410644A (en) Manufacture of semiconductor device
JPS5563839A (en) Manufacture of semiconductor integrated circuit
JPS54113273A (en) Field effect-type switching element
JPS5473585A (en) Gate turn-off thyristor
JPS5459090A (en) Semiconductor device and its manufacture
JPS572519A (en) Manufacture of semiconductor device
GB1494328A (en) Process for thinning silicon with special application to producing silicon on insulator
JPS57128953A (en) Manufacture of semiconductor integrated circuit
JPS5459084A (en) Manufacture of semiconductor device
JPS54117690A (en) Production of semiconductor device
JPS54116884A (en) Semiconductor device
RU845678C (en) Method of manufacturing hf p- &amp;&amp;&amp; -p transistors
JPS57164560A (en) Manufacture of semiconductor integrated circuit device
JPS5447493A (en) Semiconductor integrated circuit device and production of the same
JPS5712546A (en) Semiconductor device and its manufacture
JPS5728352A (en) Semiconductor integrated circuit and manufacture thereof
JPS56105673A (en) Semiconductor device
JPS5244583A (en) Method of treating semiconductor sustrate
JPS566433A (en) Growth of molybdenum film
JPS6474753A (en) Manufacture of semiconductor device
JPS5572076A (en) Production of double layer polycrystaline silicone construction semiconductor device
JPS6472563A (en) Manufacture of reverse conducting type gto thyristor
JPS5563838A (en) Preparation of semiconductor integrated circuit
JPS5612788A (en) Manufacture of semiconductor element