GB1494328A - Process for thinning silicon with special application to producing silicon on insulator - Google Patents
Process for thinning silicon with special application to producing silicon on insulatorInfo
- Publication number
- GB1494328A GB1494328A GB5246774A GB5246774A GB1494328A GB 1494328 A GB1494328 A GB 1494328A GB 5246774 A GB5246774 A GB 5246774A GB 5246774 A GB5246774 A GB 5246774A GB 1494328 A GB1494328 A GB 1494328A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- forming
- silicon
- etching
- dec
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- 239000012212 insulator Substances 0.000 title 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000001419 dependent effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Element Separation (AREA)
- Weting (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
1494328 Integrated circuit manufacture TEXAS INSTRUMENTS Inc 4 Dec 1974 [28 Dec 1973] 52467/74 Heading H1K An integrated circuit structure is made from a preferably (100) orientated silicon wafer comprising a first layer, 21, in Fig. 2c, of one conductivity type and a second e.g. epitaxial layer 23 of the opposite type of at least ten times the resistivity of the first layer by the steps of forming an oxide layer 25 over the second layer and forming apertures in it so dimensioned that when next treated in an orientation dependent etch etching stops above or at the junction with the first layer, covering the etched surface with an oxide layer 29, forming a layer 31 of polycrystalline silicon over the oxide layers, etching the first layer away using a mixture of 1 part by weight HF, 3 parts HNO 3 and 8 to 12 parts acetic acid, and then forming device structures in the surface of the second layer thus exposed. To prevent etching of the second layer by the above solution its doping is selected to be less than 1À5 x 10<SP>19</SP> or 7 x 10<SP>18</SP> atoms/c.c. according to whether it is of P or N type.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US42922873A | 1973-12-28 | 1973-12-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1494328A true GB1494328A (en) | 1977-12-07 |
Family
ID=23702356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5246774A Expired GB1494328A (en) | 1973-12-28 | 1974-12-04 | Process for thinning silicon with special application to producing silicon on insulator |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5828731B2 (en) |
DE (1) | DE2460653C2 (en) |
FR (1) | FR2256537B1 (en) |
GB (1) | GB1494328A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54110783A (en) * | 1978-02-20 | 1979-08-30 | Hitachi Ltd | Semiconductor substrate and its manufacture |
DE3300400A1 (en) | 1982-01-06 | 1983-07-14 | Canon K.K., Tokyo | SEMICONDUCTOR COMPONENT |
JPS6066825A (en) * | 1983-09-22 | 1985-04-17 | Toshiba Corp | Manufacture of semiconductor device |
US5416354A (en) * | 1989-01-06 | 1995-05-16 | Unitrode Corporation | Inverted epitaxial process semiconductor devices |
DE3922671A1 (en) * | 1989-07-10 | 1991-01-24 | Siemens Ag | Acousto-electronic device with surface wave arrangement - and IC on support, with layer structure with semiconductor crystal layer on another part of support |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4936792B1 (en) * | 1970-10-15 | 1974-10-03 |
-
1974
- 1974-09-04 JP JP49101792A patent/JPS5828731B2/en not_active Expired
- 1974-12-04 GB GB5246774A patent/GB1494328A/en not_active Expired
- 1974-12-04 FR FR7439711A patent/FR2256537B1/fr not_active Expired
- 1974-12-20 DE DE19742460653 patent/DE2460653C2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5099272A (en) | 1975-08-06 |
DE2460653A1 (en) | 1975-07-10 |
FR2256537B1 (en) | 1979-03-16 |
JPS5828731B2 (en) | 1983-06-17 |
FR2256537A1 (en) | 1975-07-25 |
DE2460653C2 (en) | 1986-02-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PE20 | Patent expired after termination of 20 years |
Effective date: 19941203 |