JPS566433A - Growth of molybdenum film - Google Patents
Growth of molybdenum filmInfo
- Publication number
- JPS566433A JPS566433A JP8092979A JP8092979A JPS566433A JP S566433 A JPS566433 A JP S566433A JP 8092979 A JP8092979 A JP 8092979A JP 8092979 A JP8092979 A JP 8092979A JP S566433 A JPS566433 A JP S566433A
- Authority
- JP
- Japan
- Prior art keywords
- molybdenum
- mos
- film
- type transistor
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 title abstract 6
- 229910052750 molybdenum Inorganic materials 0.000 title abstract 6
- 239000011733 molybdenum Substances 0.000 title abstract 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 229910001873 dinitrogen Inorganic materials 0.000 abstract 2
- 150000002751 molybdenum Chemical class 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
- 238000001947 vapour-phase growth Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain a resistor made of a molybdenum layer having the desired high specific resistance by mixing several % of nitrogen gas when pentachlorinated molybdenum is reduced with hydrogen gas to grow the molybdenum film in vapor phase. CONSTITUTION:When the electrode and the resistor of the MOS-type transistor is produced from molybdenum, a field oxide film 2 is provided on the silicone substrate 1 while a gate oxide film 3 on the semiconductor region for forming the MOS-type transistor. Then, the resister 4 made up of the molybdenum film is formed on the field oxide film 2 intended to form the high resistance element thereon. In this case, several % of nitrogen gas is mixed in the reduction of the pentachlorinated molybdenum with hydrogen to perform a vapor phase growth and it is etched leaving necessary portions. Thereafter, a normal molybdenum film low in the resistance is provided on the portions intended for the electrode and the product undergoes the well-known process to obtain the MOS-type transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8092979A JPS566433A (en) | 1979-06-26 | 1979-06-26 | Growth of molybdenum film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8092979A JPS566433A (en) | 1979-06-26 | 1979-06-26 | Growth of molybdenum film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS566433A true JPS566433A (en) | 1981-01-23 |
| JPS6318332B2 JPS6318332B2 (en) | 1988-04-18 |
Family
ID=13732120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8092979A Granted JPS566433A (en) | 1979-06-26 | 1979-06-26 | Growth of molybdenum film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS566433A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS517156A (en) * | 1974-06-10 | 1976-01-21 | Gen Foods Corp |
-
1979
- 1979-06-26 JP JP8092979A patent/JPS566433A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS517156A (en) * | 1974-06-10 | 1976-01-21 | Gen Foods Corp |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6318332B2 (en) | 1988-04-18 |
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