JPS6472563A - Manufacture of reverse conducting type gto thyristor - Google Patents

Manufacture of reverse conducting type gto thyristor

Info

Publication number
JPS6472563A
JPS6472563A JP22809587A JP22809587A JPS6472563A JP S6472563 A JPS6472563 A JP S6472563A JP 22809587 A JP22809587 A JP 22809587A JP 22809587 A JP22809587 A JP 22809587A JP S6472563 A JPS6472563 A JP S6472563A
Authority
JP
Japan
Prior art keywords
aluminum
isolating
isolating part
section
gto thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22809587A
Other languages
Japanese (ja)
Other versions
JPH0658963B2 (en
Inventor
Yoshikazu Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP62228095A priority Critical patent/JPH0658963B2/en
Publication of JPS6472563A publication Critical patent/JPS6472563A/en
Publication of JPH0658963B2 publication Critical patent/JPH0658963B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain manufacture of an isolating groove structure of the GTO section and a Di section of a reverse conducting type GTO thyristor in which a desired isolating resistance value is easily obtained and steps can be simplified by digging a groove in an isolating part by etching to form a cathode electrode with an aluminum-deposited film as a mask. CONSTITUTION:When an isolating part necessary to electrically isolate the GTO section and the Di section of a reverse conducting type GTO thyristor is manufactured, an aluminum-deposed film provided to form the cathode electrode 12 of the GTO thyristor is employed as a mask, and a group is dug in the isolating part by etching. For example, after aluminum is deposited on one surface of diffused wafer alloyed with Mo or the like in a normal treatment process, the Si of the isolating part is exposed in aluminum photoetching process. Then, the isolating part is etched in a groove etching process. In this case, it is etched while measuring the resistance of the isolating part by a tester or the like to obtain a desired resistance. Thereafter, an aluminum electrode pattern is formed by a normal photoetching process.
JP62228095A 1987-09-11 1987-09-11 Reverse conduction GTO thyristor manufacturing method Expired - Fee Related JPH0658963B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62228095A JPH0658963B2 (en) 1987-09-11 1987-09-11 Reverse conduction GTO thyristor manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62228095A JPH0658963B2 (en) 1987-09-11 1987-09-11 Reverse conduction GTO thyristor manufacturing method

Publications (2)

Publication Number Publication Date
JPS6472563A true JPS6472563A (en) 1989-03-17
JPH0658963B2 JPH0658963B2 (en) 1994-08-03

Family

ID=16871109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62228095A Expired - Fee Related JPH0658963B2 (en) 1987-09-11 1987-09-11 Reverse conduction GTO thyristor manufacturing method

Country Status (1)

Country Link
JP (1) JPH0658963B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5484517A (en) * 1994-03-08 1996-01-16 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of forming multi-element thin hot film sensors on polyimide film

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51134582A (en) * 1975-05-16 1976-11-22 Mitsubishi Electric Corp Semiconductor device
JPS54117684A (en) * 1978-03-06 1979-09-12 Fuji Electric Co Ltd Selective etching method of semiconductor
JPS5530310A (en) * 1978-08-23 1980-03-04 Nissan Motor Co Ltd Positioning method
JPS58127377A (en) * 1982-01-25 1983-07-29 Mitsubishi Electric Corp Thyristor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51134582A (en) * 1975-05-16 1976-11-22 Mitsubishi Electric Corp Semiconductor device
JPS54117684A (en) * 1978-03-06 1979-09-12 Fuji Electric Co Ltd Selective etching method of semiconductor
JPS5530310A (en) * 1978-08-23 1980-03-04 Nissan Motor Co Ltd Positioning method
JPS58127377A (en) * 1982-01-25 1983-07-29 Mitsubishi Electric Corp Thyristor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5484517A (en) * 1994-03-08 1996-01-16 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of forming multi-element thin hot film sensors on polyimide film

Also Published As

Publication number Publication date
JPH0658963B2 (en) 1994-08-03

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