JPS6472563A - Manufacture of reverse conducting type gto thyristor - Google Patents
Manufacture of reverse conducting type gto thyristorInfo
- Publication number
- JPS6472563A JPS6472563A JP22809587A JP22809587A JPS6472563A JP S6472563 A JPS6472563 A JP S6472563A JP 22809587 A JP22809587 A JP 22809587A JP 22809587 A JP22809587 A JP 22809587A JP S6472563 A JPS6472563 A JP S6472563A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- isolating
- isolating part
- section
- gto thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To obtain manufacture of an isolating groove structure of the GTO section and a Di section of a reverse conducting type GTO thyristor in which a desired isolating resistance value is easily obtained and steps can be simplified by digging a groove in an isolating part by etching to form a cathode electrode with an aluminum-deposited film as a mask. CONSTITUTION:When an isolating part necessary to electrically isolate the GTO section and the Di section of a reverse conducting type GTO thyristor is manufactured, an aluminum-deposed film provided to form the cathode electrode 12 of the GTO thyristor is employed as a mask, and a group is dug in the isolating part by etching. For example, after aluminum is deposited on one surface of diffused wafer alloyed with Mo or the like in a normal treatment process, the Si of the isolating part is exposed in aluminum photoetching process. Then, the isolating part is etched in a groove etching process. In this case, it is etched while measuring the resistance of the isolating part by a tester or the like to obtain a desired resistance. Thereafter, an aluminum electrode pattern is formed by a normal photoetching process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62228095A JPH0658963B2 (en) | 1987-09-11 | 1987-09-11 | Reverse conduction GTO thyristor manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62228095A JPH0658963B2 (en) | 1987-09-11 | 1987-09-11 | Reverse conduction GTO thyristor manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6472563A true JPS6472563A (en) | 1989-03-17 |
JPH0658963B2 JPH0658963B2 (en) | 1994-08-03 |
Family
ID=16871109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62228095A Expired - Fee Related JPH0658963B2 (en) | 1987-09-11 | 1987-09-11 | Reverse conduction GTO thyristor manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0658963B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5484517A (en) * | 1994-03-08 | 1996-01-16 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method of forming multi-element thin hot film sensors on polyimide film |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51134582A (en) * | 1975-05-16 | 1976-11-22 | Mitsubishi Electric Corp | Semiconductor device |
JPS54117684A (en) * | 1978-03-06 | 1979-09-12 | Fuji Electric Co Ltd | Selective etching method of semiconductor |
JPS5530310A (en) * | 1978-08-23 | 1980-03-04 | Nissan Motor Co Ltd | Positioning method |
JPS58127377A (en) * | 1982-01-25 | 1983-07-29 | Mitsubishi Electric Corp | Thyristor |
-
1987
- 1987-09-11 JP JP62228095A patent/JPH0658963B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51134582A (en) * | 1975-05-16 | 1976-11-22 | Mitsubishi Electric Corp | Semiconductor device |
JPS54117684A (en) * | 1978-03-06 | 1979-09-12 | Fuji Electric Co Ltd | Selective etching method of semiconductor |
JPS5530310A (en) * | 1978-08-23 | 1980-03-04 | Nissan Motor Co Ltd | Positioning method |
JPS58127377A (en) * | 1982-01-25 | 1983-07-29 | Mitsubishi Electric Corp | Thyristor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5484517A (en) * | 1994-03-08 | 1996-01-16 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method of forming multi-element thin hot film sensors on polyimide film |
Also Published As
Publication number | Publication date |
---|---|
JPH0658963B2 (en) | 1994-08-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57162359A (en) | Semiconductor device | |
JPS6413739A (en) | Manufacture of order-made integrated circuit | |
JPS551103A (en) | Semiconductor resistor | |
JPS5373083A (en) | Method of producing semiconductor | |
JPS5471564A (en) | Production of semiconductor device | |
US3772098A (en) | Method of manufacturing a field effect transistor | |
JPS6472563A (en) | Manufacture of reverse conducting type gto thyristor | |
JPS5728367A (en) | Manufacture of semiconductor device | |
JPS54113273A (en) | Field effect-type switching element | |
EP0353719A3 (en) | Metal contact with overhanging edges and process of fabrication | |
JPS572519A (en) | Manufacture of semiconductor device | |
JPS55151334A (en) | Fabricating method of semiconductor device | |
JPS5661175A (en) | Thin-film solar cell | |
KR930014830A (en) | Product manufacturing method including an etch rate monitor | |
JPS5447493A (en) | Semiconductor integrated circuit device and production of the same | |
JPS6450532A (en) | Manufacture of silicon thin film | |
JPS6473659A (en) | Manufacture of thin-film conductor device | |
JPS5712579A (en) | Buried type semiconductor laser | |
JPS56103466A (en) | Thyristor | |
JPS5563839A (en) | Manufacture of semiconductor integrated circuit | |
JPS5766667A (en) | Semiconductor device | |
JPS57181143A (en) | Manufacture of semiconductor device | |
JPS57173956A (en) | Manufacture of semiconductor device | |
JPS5759379A (en) | Manufacture of semiconductor device | |
JPS559477A (en) | Method of making semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |