JPS6473659A - Manufacture of thin-film conductor device - Google Patents

Manufacture of thin-film conductor device

Info

Publication number
JPS6473659A
JPS6473659A JP23012287A JP23012287A JPS6473659A JP S6473659 A JPS6473659 A JP S6473659A JP 23012287 A JP23012287 A JP 23012287A JP 23012287 A JP23012287 A JP 23012287A JP S6473659 A JPS6473659 A JP S6473659A
Authority
JP
Japan
Prior art keywords
thin film
resistor
tungsten silicide
implanted
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23012287A
Other languages
Japanese (ja)
Inventor
Shuichi Kameyama
Kazuhiro Obuse
Tadanaka Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP23012287A priority Critical patent/JPS6473659A/en
Publication of JPS6473659A publication Critical patent/JPS6473659A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Abstract

PURPOSE:To improve uniformity of a resistance value of a resistor and improve quality of a resistor by a method wherein a polycrystalline conductive thin film is deposited on a substrate, an atom is ion-implanted into the conductor thin film, the conductor thin film containing the atom is heat-treated and the conductor thin film is used as the resistor. CONSTITUTION:The surface of an N-type silicon semiconductor substrate 100 is oxidized, and a silicon oxide film 110 is formed to form a substrate. A polycrystalline tungsten silicide thin film 120 is deposited on the oxide film 110; ions of silicon are implanted into this tungsten silicide thin film 120. Then, the tungsten silicide thin film 120 into which the ions of silicon have been implanted is heat-treated in an atmosphere of nitrogen. A resist pattern of a resistor is formed on the heat-treated polycrystalline tungsten silicide thin film 120; the tungsten silicide thin film 120 is etched; after that, the resist is removed to form the resistor 120a. In addition, after a CVD-SiO2 film 130 has been deposited on a whole face, aluminum electrodes 140a, 140b are formed on both ends of the resistor.
JP23012287A 1987-09-14 1987-09-14 Manufacture of thin-film conductor device Pending JPS6473659A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23012287A JPS6473659A (en) 1987-09-14 1987-09-14 Manufacture of thin-film conductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23012287A JPS6473659A (en) 1987-09-14 1987-09-14 Manufacture of thin-film conductor device

Publications (1)

Publication Number Publication Date
JPS6473659A true JPS6473659A (en) 1989-03-17

Family

ID=16902911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23012287A Pending JPS6473659A (en) 1987-09-14 1987-09-14 Manufacture of thin-film conductor device

Country Status (1)

Country Link
JP (1) JPS6473659A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998035385A1 (en) * 1997-02-12 1998-08-13 Harris Corporation Co-patterning thin-film resistors of different compositions with a conductive hard mask and method for same
US6426268B1 (en) * 2000-11-28 2002-07-30 Analog Devices, Inc. Thin film resistor fabrication method
US6441447B1 (en) 1998-02-12 2002-08-27 Intersil Corporation Co-patterning thin-film resistors of different compositions with a conductive hard mask and method for same
US6909146B1 (en) * 1992-02-12 2005-06-21 Intersil Corporation Bonded wafer with metal silicidation

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6909146B1 (en) * 1992-02-12 2005-06-21 Intersil Corporation Bonded wafer with metal silicidation
WO1998035385A1 (en) * 1997-02-12 1998-08-13 Harris Corporation Co-patterning thin-film resistors of different compositions with a conductive hard mask and method for same
US6441447B1 (en) 1998-02-12 2002-08-27 Intersil Corporation Co-patterning thin-film resistors of different compositions with a conductive hard mask and method for same
US6426268B1 (en) * 2000-11-28 2002-07-30 Analog Devices, Inc. Thin film resistor fabrication method

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