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JPS6489461A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS6489461A
JPS6489461A JP24406387A JP24406387A JPS6489461A JP S6489461 A JPS6489461 A JP S6489461A JP 24406387 A JP24406387 A JP 24406387A JP 24406387 A JP24406387 A JP 24406387A JP S6489461 A JPS6489461 A JP S6489461A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
metal
insulating
low
si
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24406387A
Inventor
Masamizu Konaka
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE:To keep the low value of a substrate current ISUB under the state an electric field is gentle in the vicinity of an interface between a low impurity concentration region and an insulating film even if a device is used for a long time, by selectively growing a metal material to be struck on a part on a low impurity concentration layer in order to reduce the resistance of a gate electrode. CONSTITUTION:After polycrystalline Si film 24 is etched in a previous step, e.g., As ions are implanted into the entire surface. A low impurity concentration layer 26 is formed in a substrate 21. After resist 25 is removed, e.g., a W metal film 27 is deposited on the entire surface. Then, e.g., a resist film 28 is applied on the entire surface of a resist insulating film 28. Thereafter, the insulating film 28 is made to remain on the side wall part of the Si film 24 by RIE. With the insulating film 28 as a mask, the thin W metal film 27 is etched. Then, the insulating film 28 is removed. Under the state the pressure of WF6 gas and H2 gas is reduced, a W metal film 29 is formed only on the Si film 24 and the W metal film 27 by a CVD method. With the Si film 24 and the W metal film 27 and 29 as masks, e.g., As ions are implanted into the substrate, and a high impurity concentration layer 30 is formed. Thereafter, thermal oxidation is performed in an oxidizing atmosphere, and the intended MOSFET is completed.
JP24406387A 1987-09-30 1987-09-30 Semiconductor device and manufacture thereof Pending JPS6489461A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24406387A JPS6489461A (en) 1987-09-30 1987-09-30 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24406387A JPS6489461A (en) 1987-09-30 1987-09-30 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6489461A true true JPS6489461A (en) 1989-04-03

Family

ID=17113180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24406387A Pending JPS6489461A (en) 1987-09-30 1987-09-30 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6489461A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5241203A (en) * 1991-07-10 1993-08-31 International Business Machines Corporation Inverse T-gate FET transistor with lightly doped source and drain region
US5426327A (en) * 1990-10-05 1995-06-20 Nippon Steel Corporation MOS semiconductor with LDD structure having gate electrode and side spacers of polysilicon with different impurity concentrations

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5426327A (en) * 1990-10-05 1995-06-20 Nippon Steel Corporation MOS semiconductor with LDD structure having gate electrode and side spacers of polysilicon with different impurity concentrations
US5241203A (en) * 1991-07-10 1993-08-31 International Business Machines Corporation Inverse T-gate FET transistor with lightly doped source and drain region

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