JPS5732650A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5732650A
JPS5732650A JP10734880A JP10734880A JPS5732650A JP S5732650 A JPS5732650 A JP S5732650A JP 10734880 A JP10734880 A JP 10734880A JP 10734880 A JP10734880 A JP 10734880A JP S5732650 A JPS5732650 A JP S5732650A
Authority
JP
Japan
Prior art keywords
layer
type
epitaxial growth
diffusion layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10734880A
Other languages
Japanese (ja)
Other versions
JPH0241174B2 (en
Inventor
Tsunenori Yamauchi
Yutaka Tabata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10734880A priority Critical patent/JPS5732650A/en
Publication of JPS5732650A publication Critical patent/JPS5732650A/en
Publication of JPH0241174B2 publication Critical patent/JPH0241174B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To control the auto-doping of impurities into an epitaxial growth layer easily by forming a plane of a buried layer buried between a semiconductor substrate and the epitaxial growth layer in a netty or plural insular shape. CONSTITUTION:B is introduced selectively into the P type Si substrate 1, the impurity diffusion layer 12 with a netty pattern or an insular pattern is formed, the N type Si epitaxial growth layer 3 is shaped, and the whole is thermally treated. Consequently, B in the impurity diffusion layer 12 is diffused into the epitaxial layer 3, a P type diffusion layer 14 is molded, and a P type diffusion layer 5 for forming an element is shaped so as to join with the layer 14. Accordingly, the concentration of B in the N type epitaxial growth layer through auto-doping can easily be controlled because the amount of impurities introduced into the substrate can be decreased.
JP10734880A 1980-08-05 1980-08-05 Semiconductor device Granted JPS5732650A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10734880A JPS5732650A (en) 1980-08-05 1980-08-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10734880A JPS5732650A (en) 1980-08-05 1980-08-05 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5732650A true JPS5732650A (en) 1982-02-22
JPH0241174B2 JPH0241174B2 (en) 1990-09-14

Family

ID=14456770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10734880A Granted JPS5732650A (en) 1980-08-05 1980-08-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5732650A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03159151A (en) * 1989-11-16 1991-07-09 Sanyo Electric Co Ltd Manufacture of semiconductor device
JP2006345949A (en) * 2005-06-13 2006-12-28 Staff:Kk Assembling jungle gym

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03159151A (en) * 1989-11-16 1991-07-09 Sanyo Electric Co Ltd Manufacture of semiconductor device
JP2006345949A (en) * 2005-06-13 2006-12-28 Staff:Kk Assembling jungle gym

Also Published As

Publication number Publication date
JPH0241174B2 (en) 1990-09-14

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