JPS53110484A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS53110484A
JPS53110484A JP2620577A JP2620577A JPS53110484A JP S53110484 A JPS53110484 A JP S53110484A JP 2620577 A JP2620577 A JP 2620577A JP 2620577 A JP2620577 A JP 2620577A JP S53110484 A JPS53110484 A JP S53110484A
Authority
JP
Japan
Prior art keywords
semiconductor device
production
controlling
impurity
depth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2620577A
Other languages
Japanese (ja)
Inventor
Kohei Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2620577A priority Critical patent/JPS53110484A/en
Publication of JPS53110484A publication Critical patent/JPS53110484A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66363—Thyristors
    • H01L29/66393—Lateral or planar thyristors

Abstract

PURPOSE:To produce a semiconductor device by controlling the impurity concentration of Si substrate surface by impurity deposition temperatures and controlling the depth of diffused layers by surface concentrations.
JP2620577A 1977-03-09 1977-03-09 Production of semiconductor device Pending JPS53110484A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2620577A JPS53110484A (en) 1977-03-09 1977-03-09 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2620577A JPS53110484A (en) 1977-03-09 1977-03-09 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS53110484A true JPS53110484A (en) 1978-09-27

Family

ID=12186952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2620577A Pending JPS53110484A (en) 1977-03-09 1977-03-09 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53110484A (en)

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