JPS53108765A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS53108765A
JPS53108765A JP2362977A JP2362977A JPS53108765A JP S53108765 A JPS53108765 A JP S53108765A JP 2362977 A JP2362977 A JP 2362977A JP 2362977 A JP2362977 A JP 2362977A JP S53108765 A JPS53108765 A JP S53108765A
Authority
JP
Japan
Prior art keywords
layers
diffusion
production
semiconductor device
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2362977A
Other languages
Japanese (ja)
Inventor
Gunji Mihashi
Haruki Horikiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2362977A priority Critical patent/JPS53108765A/en
Publication of JPS53108765A publication Critical patent/JPS53108765A/en
Pending legal-status Critical Current

Links

Landscapes

  • Weting (AREA)

Abstract

PURPOSE: To obtain diffused layers of a small surface impurity concentration with good accuracy by forming extremely shallow diffusion layers by phosphorus stoms in a Si substrate, oxidizing the layers by the water having heated the substrate surface, thereafter applying one or several times of etching to chip off the surface to provide diffusion sources and performing drive-in diffusion by using this.
COPYRIGHT: (C)1978,JPO&Japio
JP2362977A 1977-03-04 1977-03-04 Production of semiconductor device Pending JPS53108765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2362977A JPS53108765A (en) 1977-03-04 1977-03-04 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2362977A JPS53108765A (en) 1977-03-04 1977-03-04 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS53108765A true JPS53108765A (en) 1978-09-21

Family

ID=12115872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2362977A Pending JPS53108765A (en) 1977-03-04 1977-03-04 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53108765A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5952475B1 (en) * 2015-08-11 2016-07-13 直江津電子工業株式会社 Diffusion wafer and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5952475B1 (en) * 2015-08-11 2016-07-13 直江津電子工業株式会社 Diffusion wafer and manufacturing method thereof

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