Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP14669275ApriorityCriticalpatent/JPS5270757A/en
Publication of JPS5270757ApublicationCriticalpatent/JPS5270757A/en
PURPOSE: The diffusion source is formed selectively on substrate, and shallow diffusion is carried out through main diffusion under low temperature to clean exposed substrate surface. After this, main diffusion is performed, so that inversion layer formation is avoided, thus obtaining stabilized PN junction.
COPYRIGHT: (C)1977,JPO&Japio
JP14669275A1975-12-091975-12-09Manufacture of semiconductor device
PendingJPS5270757A
(en)