JPS5655038A - Diffusing method for impurity into semiconductor wafer - Google Patents
Diffusing method for impurity into semiconductor waferInfo
- Publication number
- JPS5655038A JPS5655038A JP13003879A JP13003879A JPS5655038A JP S5655038 A JPS5655038 A JP S5655038A JP 13003879 A JP13003879 A JP 13003879A JP 13003879 A JP13003879 A JP 13003879A JP S5655038 A JPS5655038 A JP S5655038A
- Authority
- JP
- Japan
- Prior art keywords
- boron nitride
- impurity concentration
- semiconductor wafer
- density
- solid boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 title abstract 8
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 229910052582 BN Inorganic materials 0.000 abstract 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 abstract 6
- 239000007787 solid Substances 0.000 abstract 5
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000010301 surface-oxidation reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To obtain the desired impurity concentration without changing other conditions in the case the impurities are diffused into the semiconductor wafer with solid boron nitride as a source, by varying the density of said boron nitride. CONSTITUTION:The relationship between the density of solid boron nitride and the concentration of impurities on the surface of the semiconductor wafer is shown in Figure A, in the case other conditions such as the temperature, the time, the atmosphere, and the like are constant. If the density of said solid boron nitride as a source is suitably set, the desired impurity concentration can be obtained without changing the other conditions. The impurity concentration can be controlled by heat-treating said solid boron nitride and oxidizing the surface thereof. If the relationship between the density and the amount of the surface oxidation of said solid boron nitride and the impurity concentration is obtained beforehand, the desired impurity concentration with good reproducibility can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13003879A JPS6054773B2 (en) | 1979-10-11 | 1979-10-11 | Impurity diffusion method into semiconductor wafers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13003879A JPS6054773B2 (en) | 1979-10-11 | 1979-10-11 | Impurity diffusion method into semiconductor wafers |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5655038A true JPS5655038A (en) | 1981-05-15 |
JPS6054773B2 JPS6054773B2 (en) | 1985-12-02 |
Family
ID=15024593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13003879A Expired JPS6054773B2 (en) | 1979-10-11 | 1979-10-11 | Impurity diffusion method into semiconductor wafers |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6054773B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6293927A (en) * | 1985-10-08 | 1987-04-30 | バリアン・アソシエイツ・インコ−ポレイテツド | Doping of semiconductor wafer by quick heat treatment of solid flat diffusion source |
JPH02222136A (en) * | 1989-02-23 | 1990-09-04 | Shin Etsu Chem Co Ltd | Boron diffusing agent |
-
1979
- 1979-10-11 JP JP13003879A patent/JPS6054773B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6293927A (en) * | 1985-10-08 | 1987-04-30 | バリアン・アソシエイツ・インコ−ポレイテツド | Doping of semiconductor wafer by quick heat treatment of solid flat diffusion source |
JPH02222136A (en) * | 1989-02-23 | 1990-09-04 | Shin Etsu Chem Co Ltd | Boron diffusing agent |
Also Published As
Publication number | Publication date |
---|---|
JPS6054773B2 (en) | 1985-12-02 |
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