JPS5655038A - Diffusing method for impurity into semiconductor wafer - Google Patents

Diffusing method for impurity into semiconductor wafer

Info

Publication number
JPS5655038A
JPS5655038A JP13003879A JP13003879A JPS5655038A JP S5655038 A JPS5655038 A JP S5655038A JP 13003879 A JP13003879 A JP 13003879A JP 13003879 A JP13003879 A JP 13003879A JP S5655038 A JPS5655038 A JP S5655038A
Authority
JP
Japan
Prior art keywords
boron nitride
impurity concentration
semiconductor wafer
density
solid boron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13003879A
Other languages
Japanese (ja)
Other versions
JPS6054773B2 (en
Inventor
Kenji Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13003879A priority Critical patent/JPS6054773B2/en
Publication of JPS5655038A publication Critical patent/JPS5655038A/en
Publication of JPS6054773B2 publication Critical patent/JPS6054773B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain the desired impurity concentration without changing other conditions in the case the impurities are diffused into the semiconductor wafer with solid boron nitride as a source, by varying the density of said boron nitride. CONSTITUTION:The relationship between the density of solid boron nitride and the concentration of impurities on the surface of the semiconductor wafer is shown in Figure A, in the case other conditions such as the temperature, the time, the atmosphere, and the like are constant. If the density of said solid boron nitride as a source is suitably set, the desired impurity concentration can be obtained without changing the other conditions. The impurity concentration can be controlled by heat-treating said solid boron nitride and oxidizing the surface thereof. If the relationship between the density and the amount of the surface oxidation of said solid boron nitride and the impurity concentration is obtained beforehand, the desired impurity concentration with good reproducibility can be obtained.
JP13003879A 1979-10-11 1979-10-11 Impurity diffusion method into semiconductor wafers Expired JPS6054773B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13003879A JPS6054773B2 (en) 1979-10-11 1979-10-11 Impurity diffusion method into semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13003879A JPS6054773B2 (en) 1979-10-11 1979-10-11 Impurity diffusion method into semiconductor wafers

Publications (2)

Publication Number Publication Date
JPS5655038A true JPS5655038A (en) 1981-05-15
JPS6054773B2 JPS6054773B2 (en) 1985-12-02

Family

ID=15024593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13003879A Expired JPS6054773B2 (en) 1979-10-11 1979-10-11 Impurity diffusion method into semiconductor wafers

Country Status (1)

Country Link
JP (1) JPS6054773B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6293927A (en) * 1985-10-08 1987-04-30 バリアン・アソシエイツ・インコ−ポレイテツド Doping of semiconductor wafer by quick heat treatment of solid flat diffusion source
JPH02222136A (en) * 1989-02-23 1990-09-04 Shin Etsu Chem Co Ltd Boron diffusing agent

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6293927A (en) * 1985-10-08 1987-04-30 バリアン・アソシエイツ・インコ−ポレイテツド Doping of semiconductor wafer by quick heat treatment of solid flat diffusion source
JPH02222136A (en) * 1989-02-23 1990-09-04 Shin Etsu Chem Co Ltd Boron diffusing agent

Also Published As

Publication number Publication date
JPS6054773B2 (en) 1985-12-02

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