JPS5488768A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5488768A
JPS5488768A JP15693677A JP15693677A JPS5488768A JP S5488768 A JPS5488768 A JP S5488768A JP 15693677 A JP15693677 A JP 15693677A JP 15693677 A JP15693677 A JP 15693677A JP S5488768 A JPS5488768 A JP S5488768A
Authority
JP
Japan
Prior art keywords
diffusion
manufacture
semiconductor device
elements
high surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15693677A
Other languages
Japanese (ja)
Inventor
Masahide Miyagi
Noritada Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP15693677A priority Critical patent/JPS5488768A/en
Publication of JPS5488768A publication Critical patent/JPS5488768A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To achieve deep diffusion in high concentration, by diffusing Ga and B to Si semiconductor.
CONSTITUTION: Since Ga has greater atom diameter than Si and B has smaller one, then when the both elements are together diffused, the lattice distortion of Si can be decreased. Since Ga has greater diffusion coefficient, deep diffusion is possible, and B can give high surface concentration. Since the character which is very contrastive, is given, then the diffusion by the both elements can give high surface concentration and deep diffusion depth. It is effective to diffuse Ga first and B next.
COPYRIGHT: (C)1979,JPO&Japio
JP15693677A 1977-12-26 1977-12-26 Manufacture for semiconductor device Pending JPS5488768A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15693677A JPS5488768A (en) 1977-12-26 1977-12-26 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15693677A JPS5488768A (en) 1977-12-26 1977-12-26 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5488768A true JPS5488768A (en) 1979-07-14

Family

ID=15638579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15693677A Pending JPS5488768A (en) 1977-12-26 1977-12-26 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5488768A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961963A (en) * 1982-10-01 1984-04-09 Meidensha Electric Mfg Co Ltd Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS492786A (en) * 1972-04-26 1974-01-11
JPS5028977A (en) * 1973-07-16 1975-03-24

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS492786A (en) * 1972-04-26 1974-01-11
JPS5028977A (en) * 1973-07-16 1975-03-24

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961963A (en) * 1982-10-01 1984-04-09 Meidensha Electric Mfg Co Ltd Manufacture of semiconductor device

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