JPS6442854A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6442854A JPS6442854A JP62199626A JP19962687A JPS6442854A JP S6442854 A JPS6442854 A JP S6442854A JP 62199626 A JP62199626 A JP 62199626A JP 19962687 A JP19962687 A JP 19962687A JP S6442854 A JPS6442854 A JP S6442854A
- Authority
- JP
- Japan
- Prior art keywords
- regions
- channel
- silicon thin
- thin films
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To make the junction in channel regions shallower for preventing the short channel effect from being exercised by a method wherein silicon thin films are deposited on a substrate by epitaxial growing process instead of the ion implanting process in case of junction-forming the channel regions of a p-channel transistor. CONSTITUTION:The title manufacture is provided with a process to form insulating films 40 for interelement isolation on the surface of a semiconductor substrate 10, another process to selectively epitaxial grow silicon thin films 60 on the substrate regions not covered with the insulating films 40 and the other process to form an MOS type semiconductor element using the epitaxially grown silicon thin films 60 as channel regions. Consequently, the parts to be active regions can be formed by selective epitaxial growing process enabling the concentration and the thickness of impurity to be controlled at the specified value. Through these procedures, the channel regions can be formed in the thickness shallower than that in case of using the ion implanting process enabling the short channel effect to be lessened.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62199626A JPS6442854A (en) | 1987-08-10 | 1987-08-10 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62199626A JPS6442854A (en) | 1987-08-10 | 1987-08-10 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6442854A true JPS6442854A (en) | 1989-02-15 |
Family
ID=16410980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62199626A Pending JPS6442854A (en) | 1987-08-10 | 1987-08-10 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6442854A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5633881A (en) * | 1979-08-29 | 1981-04-04 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS63204651A (en) * | 1987-02-19 | 1988-08-24 | Seiko Instr & Electronics Ltd | Insulated gate field effect transistor |
-
1987
- 1987-08-10 JP JP62199626A patent/JPS6442854A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5633881A (en) * | 1979-08-29 | 1981-04-04 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS63204651A (en) * | 1987-02-19 | 1988-08-24 | Seiko Instr & Electronics Ltd | Insulated gate field effect transistor |
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