JPS5633844A - Semiconductor device and manufacture therefor - Google Patents

Semiconductor device and manufacture therefor

Info

Publication number
JPS5633844A
JPS5633844A JP10995879A JP10995879A JPS5633844A JP S5633844 A JPS5633844 A JP S5633844A JP 10995879 A JP10995879 A JP 10995879A JP 10995879 A JP10995879 A JP 10995879A JP S5633844 A JPS5633844 A JP S5633844A
Authority
JP
Japan
Prior art keywords
oxide film
vapor growth
semiconductor device
dampproofness
9mol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10995879A
Other languages
Japanese (ja)
Other versions
JPS6344293B2 (en
Inventor
Seiichiro Takabayashi
Masanori Sakata
Yoshiaki Yadoiwa
Hitoshi Hoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10995879A priority Critical patent/JPS5633844A/en
Publication of JPS5633844A publication Critical patent/JPS5633844A/en
Publication of JPS6344293B2 publication Critical patent/JPS6344293B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve the dampproofness of the semiconductor device and to extend life by using an oxide film containing specific high density P2O5 as an insulator forming a wiring layer on the oxide film. CONSTITUTION:A high density phosphorus glass layer 6 is formed on a field oxide film, a gate oxide film and a gate electrode which are provided on a silicon substrate 1. After making holes for contact on the layer 6, a vapor growth oxide film 7 (Especially, SiO2) containing P2O5 with 0.4-9mol% is formed. And heat treatment is made at 900-1,000 deg.C to minute the oxide film. After making holes for contact, an aluminum wiring 8 is formed by aluminum evaporation. Finally, the parts except a bonding pad section are covered with a vapor growth oxide film 9 containing P2O5 with 0.4-9mol%. In this way, the dampproofness of a device will be improved and life will also be extended. Especially, P2O5 of the vapor growth oxide film with 1-7mol% density permits full fruit.
JP10995879A 1979-08-28 1979-08-28 Semiconductor device and manufacture therefor Granted JPS5633844A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10995879A JPS5633844A (en) 1979-08-28 1979-08-28 Semiconductor device and manufacture therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10995879A JPS5633844A (en) 1979-08-28 1979-08-28 Semiconductor device and manufacture therefor

Publications (2)

Publication Number Publication Date
JPS5633844A true JPS5633844A (en) 1981-04-04
JPS6344293B2 JPS6344293B2 (en) 1988-09-05

Family

ID=14523440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10995879A Granted JPS5633844A (en) 1979-08-28 1979-08-28 Semiconductor device and manufacture therefor

Country Status (1)

Country Link
JP (1) JPS5633844A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119611A (en) * 1982-01-07 1983-07-16 Mitsubishi Electric Corp Superconducting coil

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5214367A (en) * 1975-07-25 1977-02-03 Hitachi Ltd Semiconductor device on which the phosphosilicate glass layer is formed
JPS52131484A (en) * 1976-04-28 1977-11-04 Hitachi Ltd Semiconductor device
JPS5460558A (en) * 1977-10-24 1979-05-16 Hitachi Ltd Electrode forming method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5214367A (en) * 1975-07-25 1977-02-03 Hitachi Ltd Semiconductor device on which the phosphosilicate glass layer is formed
JPS52131484A (en) * 1976-04-28 1977-11-04 Hitachi Ltd Semiconductor device
JPS5460558A (en) * 1977-10-24 1979-05-16 Hitachi Ltd Electrode forming method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119611A (en) * 1982-01-07 1983-07-16 Mitsubishi Electric Corp Superconducting coil

Also Published As

Publication number Publication date
JPS6344293B2 (en) 1988-09-05

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