JPS56103432A - Production of semiconductor - Google Patents

Production of semiconductor

Info

Publication number
JPS56103432A
JPS56103432A JP671680A JP671680A JPS56103432A JP S56103432 A JPS56103432 A JP S56103432A JP 671680 A JP671680 A JP 671680A JP 671680 A JP671680 A JP 671680A JP S56103432 A JPS56103432 A JP S56103432A
Authority
JP
Japan
Prior art keywords
20min
thin film
substrate
vacuum
back electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP671680A
Other languages
Japanese (ja)
Inventor
Mitsuo Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP671680A priority Critical patent/JPS56103432A/en
Publication of JPS56103432A publication Critical patent/JPS56103432A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/83805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To provide a back electrode with a stable Ai-Si eutectic layer at a low cost without use of any heat treatment furnace or the like. CONSTITUTION:A given element region is formed on an N expitaxial layer on an N type si substrate. First the substrate is treated in a fluoric acid liquid and washed with pure water. Then, an Au thin film 2 is vacuum evaporated on the back thereof and treated under vacuum at 380 deg.C for about 20min by infrared rays to form an Au-Si eutectic layer 3. After cooled for about 20min, the Au thin film 2 undergoes a vacuum evaporation again to complete a back electrode. With such an arrangement, evaporation and backing are consistently performed thereby minimizing damage to a wafer. Less use of Au can reduce the raw cost.
JP671680A 1980-01-22 1980-01-22 Production of semiconductor Pending JPS56103432A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP671680A JPS56103432A (en) 1980-01-22 1980-01-22 Production of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP671680A JPS56103432A (en) 1980-01-22 1980-01-22 Production of semiconductor

Publications (1)

Publication Number Publication Date
JPS56103432A true JPS56103432A (en) 1981-08-18

Family

ID=11645981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP671680A Pending JPS56103432A (en) 1980-01-22 1980-01-22 Production of semiconductor

Country Status (1)

Country Link
JP (1) JPS56103432A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4702941A (en) * 1984-03-27 1987-10-27 Motorola Inc. Gold metallization process
EP2693465A1 (en) * 2012-07-31 2014-02-05 Nxp B.V. Electronic device and method of manufacturing such device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4702941A (en) * 1984-03-27 1987-10-27 Motorola Inc. Gold metallization process
EP2693465A1 (en) * 2012-07-31 2014-02-05 Nxp B.V. Electronic device and method of manufacturing such device

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