JPS551109A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS551109A JPS551109A JP7293078A JP7293078A JPS551109A JP S551109 A JPS551109 A JP S551109A JP 7293078 A JP7293078 A JP 7293078A JP 7293078 A JP7293078 A JP 7293078A JP S551109 A JPS551109 A JP S551109A
- Authority
- JP
- Japan
- Prior art keywords
- terephthalic acid
- film
- insulating film
- wirings
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To raise the voltage proof of an insulating film and reduce the parasitic capacitance between wirings, by coating a required part of a substrate with an insulating substance mixed with terephthalic acid and sublimating the terephthalic acid by heating so that the porous and thick insulating film is produced.
CONSTITUTION: The insulating substance mixed with the terephthalic acid is coated on a prescribed part of a first-layer electrode wiring 22 on the substrate 1. The terephthalic acid is then sublimated in a heat treatment process wherein a second- layer electrode wiring 4 and the insulating film 5 are produced. As a result, the film is made porous and thick. The voltage proof of the film is high. The parasitic capacitance between the wirings is low.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7293078A JPS551109A (en) | 1978-06-16 | 1978-06-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7293078A JPS551109A (en) | 1978-06-16 | 1978-06-16 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS551109A true JPS551109A (en) | 1980-01-07 |
Family
ID=13503561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7293078A Pending JPS551109A (en) | 1978-06-16 | 1978-06-16 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS551109A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01137651A (en) * | 1987-11-25 | 1989-05-30 | Hitachi Ltd | Semiconductor device |
EP0333132A2 (en) * | 1988-03-15 | 1989-09-20 | Nec Corporation | Semiconductor device having multilayered wiring structure with a small parasitic capacitance |
JPH03105923A (en) * | 1989-09-19 | 1991-05-02 | Nec Corp | Multilayer interconnection |
WO1995032604A1 (en) * | 1994-05-23 | 1995-11-30 | General Electric Company | Processing low dielectric constant materials for high speed electronics |
EP0687004A1 (en) * | 1994-06-07 | 1995-12-13 | Texas Instruments Incorporated | Method for fabrication of dielectrics on semiconductor devices |
US5785787A (en) * | 1994-05-23 | 1998-07-28 | General Electric Company | Processing low dielectric constant materials for high speed electronics |
-
1978
- 1978-06-16 JP JP7293078A patent/JPS551109A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01137651A (en) * | 1987-11-25 | 1989-05-30 | Hitachi Ltd | Semiconductor device |
EP0333132A2 (en) * | 1988-03-15 | 1989-09-20 | Nec Corporation | Semiconductor device having multilayered wiring structure with a small parasitic capacitance |
JPH03105923A (en) * | 1989-09-19 | 1991-05-02 | Nec Corp | Multilayer interconnection |
WO1995032604A1 (en) * | 1994-05-23 | 1995-11-30 | General Electric Company | Processing low dielectric constant materials for high speed electronics |
US5554305A (en) * | 1994-05-23 | 1996-09-10 | General Electric Company | Processing low dielectric constant materials for high speed electronics |
US5576517A (en) * | 1994-05-23 | 1996-11-19 | General Electric Company | Low Dielectric constant materials for high speed electronics |
US5785787A (en) * | 1994-05-23 | 1998-07-28 | General Electric Company | Processing low dielectric constant materials for high speed electronics |
US6297459B1 (en) | 1994-05-23 | 2001-10-02 | General Electric Company | Processing low dielectric constant materials for high speed electronics |
EP1484949A3 (en) * | 1994-05-23 | 2004-12-15 | General Electric Company | Processing low dielectric constant materials for high speed electronics |
EP0687004A1 (en) * | 1994-06-07 | 1995-12-13 | Texas Instruments Incorporated | Method for fabrication of dielectrics on semiconductor devices |
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