JPS5524458A - Manufacture of semiconductor - Google Patents

Manufacture of semiconductor

Info

Publication number
JPS5524458A
JPS5524458A JP9708378A JP9708378A JPS5524458A JP S5524458 A JPS5524458 A JP S5524458A JP 9708378 A JP9708378 A JP 9708378A JP 9708378 A JP9708378 A JP 9708378A JP S5524458 A JPS5524458 A JP S5524458A
Authority
JP
Japan
Prior art keywords
films
8aw8c
7aw7c
heat
protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9708378A
Other languages
Japanese (ja)
Other versions
JPS6130735B2 (en
Inventor
Kazuko Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9708378A priority Critical patent/JPS5524458A/en
Publication of JPS5524458A publication Critical patent/JPS5524458A/en
Publication of JPS6130735B2 publication Critical patent/JPS6130735B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3178—Coating or filling in grooves made in the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To stabilize through the process consisting of esterizing, coating with alcoholic liquid, and heat-treating, the etched surface of protective glass film.
CONSTITUTION: Mesa-grooves 5aW5c and 6aW6c are formed in a semiconductor substrate 1, and protective glass films 7aW7c and 8aW8c in said mesa-grooves 5aW5c and 6aW6c. Next, the whole structures of the heat-oxidized films 9 and 10 formed in preceding process are removed by etching for forming an electrode. Next, said protective films 7aW7c and 8aW8c are esterized by immersing said substrate 1 in ethanol for example. Next, said protective films 7aW7c and 8aW8c are coated with alcoholic liquid such as organic silane and heat-treated for forming oxidized films 11aW11b and 12aW12b at the surface thereof. Thereby, the surface, unstabilized through etching process, of said protective films 7aW7c and 8aW8c can be stabilized. Thus, said surface can be stabilized in characteristic since undesired matters do not attach again thereto after system assembly.
COPYRIGHT: (C)1980,JPO&Japio
JP9708378A 1978-08-08 1978-08-08 Manufacture of semiconductor Granted JPS5524458A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9708378A JPS5524458A (en) 1978-08-08 1978-08-08 Manufacture of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9708378A JPS5524458A (en) 1978-08-08 1978-08-08 Manufacture of semiconductor

Publications (2)

Publication Number Publication Date
JPS5524458A true JPS5524458A (en) 1980-02-21
JPS6130735B2 JPS6130735B2 (en) 1986-07-15

Family

ID=14182736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9708378A Granted JPS5524458A (en) 1978-08-08 1978-08-08 Manufacture of semiconductor

Country Status (1)

Country Link
JP (1) JPS5524458A (en)

Also Published As

Publication number Publication date
JPS6130735B2 (en) 1986-07-15

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