JPS5460558A - Electrode forming method - Google Patents

Electrode forming method

Info

Publication number
JPS5460558A
JPS5460558A JP12684677A JP12684677A JPS5460558A JP S5460558 A JPS5460558 A JP S5460558A JP 12684677 A JP12684677 A JP 12684677A JP 12684677 A JP12684677 A JP 12684677A JP S5460558 A JPS5460558 A JP S5460558A
Authority
JP
Japan
Prior art keywords
electrode
layer
oxide film
substrate
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12684677A
Other languages
Japanese (ja)
Inventor
Tatsu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12684677A priority Critical patent/JPS5460558A/en
Publication of JPS5460558A publication Critical patent/JPS5460558A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To form the electrode while preventing easily the deterioration of the wetproof property at the electrode part through a simple treatment.
CONSTITUTION: The opening is drilled to the oxide film of substrate 1 with which the element formation is through, and PSG7 of about 10mol phosphorus density is laminated. After providing the window selectively to layer 7, the substrate is heated up about 30min at 100W1,100°C to give flowing. Thus, the stage error of the window is smoothed. Then the 60-minute process is given at 1,000°C in the nonoxidizing atmosphere to diffuse the phosphorus outside from the PSG surface, thus forming PSG surface layer 10 featuring a low phosphours density. Then A1 electrode 11 is formed at the connection part. Layer 10 thus formed is a dense oxide film similar to SiO2 and show high moisture proof property.
COPYRIGHT: (C)1979,JPO&Japio
JP12684677A 1977-10-24 1977-10-24 Electrode forming method Pending JPS5460558A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12684677A JPS5460558A (en) 1977-10-24 1977-10-24 Electrode forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12684677A JPS5460558A (en) 1977-10-24 1977-10-24 Electrode forming method

Publications (1)

Publication Number Publication Date
JPS5460558A true JPS5460558A (en) 1979-05-16

Family

ID=14945304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12684677A Pending JPS5460558A (en) 1977-10-24 1977-10-24 Electrode forming method

Country Status (1)

Country Link
JP (1) JPS5460558A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633844A (en) * 1979-08-28 1981-04-04 Nec Corp Semiconductor device and manufacture therefor
JPS5893324A (en) * 1981-11-30 1983-06-03 Nec Corp Semiconductive device
JPS5916346A (en) * 1982-07-19 1984-01-27 Matsushita Electronics Corp Manufacture of semiconductor device
JPS63220547A (en) * 1987-03-09 1988-09-13 Matsushita Electronics Corp Manufacture of semiconductor device
US5077238A (en) * 1988-05-18 1991-12-31 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device with a planar interlayer insulating film

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633844A (en) * 1979-08-28 1981-04-04 Nec Corp Semiconductor device and manufacture therefor
JPS6344293B2 (en) * 1979-08-28 1988-09-05 Nippon Electric Co
JPS5893324A (en) * 1981-11-30 1983-06-03 Nec Corp Semiconductive device
JPS5916346A (en) * 1982-07-19 1984-01-27 Matsushita Electronics Corp Manufacture of semiconductor device
JPS63220547A (en) * 1987-03-09 1988-09-13 Matsushita Electronics Corp Manufacture of semiconductor device
US5077238A (en) * 1988-05-18 1991-12-31 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device with a planar interlayer insulating film

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