JPS5443689A - Production of semiconductor integrated circuit unit - Google Patents
Production of semiconductor integrated circuit unitInfo
- Publication number
- JPS5443689A JPS5443689A JP10988377A JP10988377A JPS5443689A JP S5443689 A JPS5443689 A JP S5443689A JP 10988377 A JP10988377 A JP 10988377A JP 10988377 A JP10988377 A JP 10988377A JP S5443689 A JPS5443689 A JP S5443689A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- jfet
- substrate
- leading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To form a bi-polar transistor and a JFET on he same substrate.
CONSTITUTION: An n+ type buried layer is formed on a p type Si substrate, and n- type epi-layer 4 is overlapped to form selectively P+ type ion injection layer 6. Layer 6 is stretched out by heat treatment, and p- type inversion layer 7 is formed while standing out from the substrate. Continuously, n type ions are injected to layer 7, and layer 7 is stretched out to form channel 9. Next, p- type isolation layer 10 is formed in n- type layer 3 in the upper part of the buried layer while surrounding p+ type base 10 and layer 9. Next, p+ type gate layer 17 is formed in layer 9, and an n+ type collector leading-out layer, emitter layer 14, source leading-out part 15 and drain leading-out part 16 are formed in layers 3 and 10. Finally, the Al electrode is added. Thus, an IC of the bi-polar. n channel JFET incorporating a JFET can be formed.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10988377A JPS5443689A (en) | 1977-09-14 | 1977-09-14 | Production of semiconductor integrated circuit unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10988377A JPS5443689A (en) | 1977-09-14 | 1977-09-14 | Production of semiconductor integrated circuit unit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5443689A true JPS5443689A (en) | 1979-04-06 |
JPS6138616B2 JPS6138616B2 (en) | 1986-08-30 |
Family
ID=14521569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10988377A Granted JPS5443689A (en) | 1977-09-14 | 1977-09-14 | Production of semiconductor integrated circuit unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5443689A (en) |
-
1977
- 1977-09-14 JP JP10988377A patent/JPS5443689A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6138616B2 (en) | 1986-08-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5638867A (en) | Insulated gate type field effect transistor | |
JPS56100461A (en) | Semiconductor ic device | |
JPS5443689A (en) | Production of semiconductor integrated circuit unit | |
JPS5248475A (en) | Semiconductor device | |
JPS54131887A (en) | Manufacture of bipolar cmos-type integrated circuit | |
JPS5214388A (en) | Process for complementary insulated gate semiconductor integrated circuit device | |
JPS56108255A (en) | Semiconductor integrated circuit | |
JPS56125875A (en) | Semiconductor integrated circuit device | |
JPS57118663A (en) | Manufacture of semiconductor integrated circuit device | |
JPS55108773A (en) | Insulating gate type field effect transistor | |
JPS5516480A (en) | Insulating gate electrostatic effect transistor and semiconductor integrated circuit device | |
JPS5261976A (en) | Semiconductor integrated circuit device and its production | |
JPS5643769A (en) | Semiconductor ic circuit device and method of producing the same | |
JPS54113269A (en) | Production of junction-type electronic field effect transistor | |
JPS54101290A (en) | Semiconductor integtated circuit unit and its manufacture | |
JPS5591858A (en) | Manufacture of semiconductor device | |
JPS5732664A (en) | Semiconductor integrated circuit device | |
JPS6448464A (en) | Semiconductor device | |
JPS51116685A (en) | Semiconductor device | |
JPS5591857A (en) | Manufacture of semiconductor device | |
JPS5736863A (en) | Manufacture of semiconductor device | |
JPS56162863A (en) | Semiconductor device | |
JPS6417475A (en) | Manufacture of mos semiconductor device | |
JPS56104470A (en) | Semiconductor device and manufacture thereof | |
JPS572579A (en) | Manufacture of junction type field effect transistor |