JPS5732664A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5732664A
JPS5732664A JP10728880A JP10728880A JPS5732664A JP S5732664 A JPS5732664 A JP S5732664A JP 10728880 A JP10728880 A JP 10728880A JP 10728880 A JP10728880 A JP 10728880A JP S5732664 A JPS5732664 A JP S5732664A
Authority
JP
Japan
Prior art keywords
high concentration
transistor
emitter
region
base region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10728880A
Other languages
Japanese (ja)
Other versions
JPH0222545B2 (en
Inventor
Hiroyuki Wakabayashi
Naosada Tomari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10728880A priority Critical patent/JPS5732664A/en
Publication of JPS5732664A publication Critical patent/JPS5732664A/en
Publication of JPH0222545B2 publication Critical patent/JPH0222545B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L

Abstract

PURPOSE:To improve injection efficiency to an emitter of a reversely operating transistor by forming an emitter region containing impurities with high concentration while adjoining in the lateral direction of a base region of an inverter-transistor. CONSTITUTION:The structure of the transistor in the lateral direction is obtained in such a manner that the emitter region 6 containing N type impurities with high concentration are formed to the surface of a substrate in a shape that is overlapped to one part of the base region 2. Ions are mainly injected directly from said high concentration emitter region 6 without through a high concentration buried layer 14 in this structure. Accordingly, the emitter efficiency of the transistor can be improved without lowering the dielectric resistance of a coexisting bipolar transistor because the high concentration buried layer 14 can be kept away from the base region 2.
JP10728880A 1980-08-05 1980-08-05 Semiconductor integrated circuit device Granted JPS5732664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10728880A JPS5732664A (en) 1980-08-05 1980-08-05 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10728880A JPS5732664A (en) 1980-08-05 1980-08-05 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5732664A true JPS5732664A (en) 1982-02-22
JPH0222545B2 JPH0222545B2 (en) 1990-05-18

Family

ID=14455286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10728880A Granted JPS5732664A (en) 1980-08-05 1980-08-05 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5732664A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5784162A (en) * 1980-11-13 1982-05-26 Toshiba Corp Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH056617U (en) * 1991-06-27 1993-01-29 ナイルス部品株式会社 Vehicle actuator control device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5784162A (en) * 1980-11-13 1982-05-26 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
JPH0222545B2 (en) 1990-05-18

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