ES438593A1 - Semiconductor device having complementary transistors and method of manufacturing same - Google Patents

Semiconductor device having complementary transistors and method of manufacturing same

Info

Publication number
ES438593A1
ES438593A1 ES438593A ES438593A ES438593A1 ES 438593 A1 ES438593 A1 ES 438593A1 ES 438593 A ES438593 A ES 438593A ES 438593 A ES438593 A ES 438593A ES 438593 A1 ES438593 A1 ES 438593A1
Authority
ES
Spain
Prior art keywords
conductivity
type
epitaxial layer
epitaxial
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES438593A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES438593A1 publication Critical patent/ES438593A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material

Abstract

Improvements introduced into a semiconductor device having a body comprising at least a first epitaxial semiconductor layer of a first type of conductivity and a second epitaxial semiconductor layer of the second type of conductivity, which is present therein and which is adjacent to a body surface, and comprising at least two complementary bipolar transistor structures electrically isolated from each other, the base area of the first transistor structure being formed by at least a part of the first epitaxial layer and being formed the base area of the second transistor structure by at least a part of the second epitaxial layer, characterized by the fact that both transistor structures are provided with islands that are adjacent to the same substantially flat surface of the body and that are separated of the remaining part of the body by a barrier layer, WHY the area d The collector of the second transistor structure is formed by at least a part of the first epitaxial layer and in that the first transistor structure comprises a semiconductor region adjacent to the surface, of the second type of conductivity, that surrounds substantially completely a region adjacent to the surface, consisting of parts of the first and second epitaxial layers within the body and constituting the collector zone, at least one connection zone of the first type of conductivity extending from the surface to the present being present below, up to the first epitaxial layer, said connection zone being separated from the said semiconductor region of the second type of conductivity, being more highly activated than the first epitaxial layer and completely surrounding a part of the second epitaxial layer that constitutes the zone of transmitter. (Machine-translation by Google Translate, not legally binding)
ES438593A 1974-06-18 1975-06-16 Semiconductor device having complementary transistors and method of manufacturing same Expired ES438593A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7408110A NL7408110A (en) 1974-06-18 1974-06-18 SEMICONDUCTOR DEVICE WITH COMPLEMENTARY TRANSISTOR STRUCTURES AND METHOD FOR MANUFACTURE THEREOF.

Publications (1)

Publication Number Publication Date
ES438593A1 true ES438593A1 (en) 1977-01-16

Family

ID=19821569

Family Applications (1)

Application Number Title Priority Date Filing Date
ES438593A Expired ES438593A1 (en) 1974-06-18 1975-06-16 Semiconductor device having complementary transistors and method of manufacturing same

Country Status (13)

Country Link
JP (1) JPS5112778A (en)
AU (1) AU499052B2 (en)
BE (1) BE830286A (en)
BR (1) BR7503777A (en)
CA (1) CA1029134A (en)
CH (1) CH588166A5 (en)
DE (1) DE2525529B2 (en)
ES (1) ES438593A1 (en)
FR (1) FR2275884A1 (en)
GB (1) GB1505103A (en)
IT (1) IT1046053B (en)
NL (1) NL7408110A (en)
SE (1) SE407996B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7710164A (en) * 1977-09-16 1979-03-20 Philips Nv METHOD OF TREATING A SINGLE CRYSTAL LINE BODY.
US4159915A (en) * 1977-10-25 1979-07-03 International Business Machines Corporation Method for fabrication vertical NPN and PNP structures utilizing ion-implantation
US4232328A (en) * 1978-12-20 1980-11-04 Bell Telephone Laboratories, Incorporated Dielectrically-isolated integrated circuit complementary transistors for high voltage use
GB2060252B (en) * 1979-09-17 1984-02-22 Nippon Telegraph & Telephone Mutually isolated complementary semiconductor elements
JPS57204898A (en) * 1981-06-02 1982-12-15 Saito Masayasu Pump for vessel for dividing liquid little by little
JP2531824Y2 (en) * 1987-02-13 1997-04-09 株式会社 神崎高級工機製作所 Hydraulic clutch type transmission
JPS63142451U (en) * 1987-03-12 1988-09-20
US5070382A (en) * 1989-08-18 1991-12-03 Motorola, Inc. Semiconductor structure for high power integrated circuits
US7076124B2 (en) * 2002-12-20 2006-07-11 Avago Technologies, Ltd. Integrated multichannel laser driver and photodetector receiver

Also Published As

Publication number Publication date
DE2525529A1 (en) 1976-01-08
FR2275884A1 (en) 1976-01-16
JPS5247319B2 (en) 1977-12-01
CA1029134A (en) 1978-04-04
SE7506878L (en) 1975-12-19
CH588166A5 (en) 1977-05-31
IT1046053B (en) 1980-06-30
FR2275884B1 (en) 1980-10-24
NL7408110A (en) 1975-12-22
BR7503777A (en) 1976-07-06
JPS5112778A (en) 1976-01-31
AU8214975A (en) 1976-12-23
SE407996B (en) 1979-04-30
AU499052B2 (en) 1979-04-05
DE2525529B2 (en) 1977-08-04
GB1505103A (en) 1978-03-22
BE830286A (en) 1975-12-16

Similar Documents

Publication Publication Date Title
EP0272453A3 (en) Merged bipolar/cmos technology using electrically active trench
ES438593A1 (en) Semiconductor device having complementary transistors and method of manufacturing same
EP0386413A3 (en) Complementary transistor structure and method for manufacture
SE7714902L (en) POWER TRANSISTOR
GB1533156A (en) Semiconductor integrated circuits
GB1334745A (en) Semiconductor devices
KR850003478A (en) Lateral bipolar transistors formed in insulating substrate silicon
JPS6467972A (en) Power mosfet
GB1531811A (en) Complementary transistors and their manufacture
ES460687A1 (en) Planar semiconductor device
GB1496306A (en) Semiconductor integrated circuit including an epitaxial base type vertical transistor
GB1362852A (en) High frequency planar transistor employing highly resistive guard ring
KR860001488A (en) Semiconductor Devices with Bipolar Transistors and IIL
GB1429696A (en)
KR890008993A (en) Semiconductor device
JPS56157042A (en) Manufacture of semiconductor device
GB1252097A (en)
ES368826A1 (en) Epitaxial transistor with limited area buried layer and lifetimekillers
JPS5732664A (en) Semiconductor integrated circuit device
JPS5371572A (en) Manufacture of lateral pnp transistor
ES352147A1 (en) Integrated circuit having matched complementary transistors
JPS5263080A (en) Production of semiconductor integrated circuit device
ES392398A1 (en) Semiconductor devices
ES393040A1 (en) Semiconductor integrated devices
JPS5326580A (en) Semiconductor unit