IT1046053B - SEMICONDUCTOR DEVICE PRESENTING TRANSISTOR STRUCTURES OF A COMPLEMENTARY TYPE AND METHOD OF MANUFACTURING ITSELF - Google Patents
SEMICONDUCTOR DEVICE PRESENTING TRANSISTOR STRUCTURES OF A COMPLEMENTARY TYPE AND METHOD OF MANUFACTURING ITSELFInfo
- Publication number
- IT1046053B IT1046053B IT24362/75A IT2436275A IT1046053B IT 1046053 B IT1046053 B IT 1046053B IT 24362/75 A IT24362/75 A IT 24362/75A IT 2436275 A IT2436275 A IT 2436275A IT 1046053 B IT1046053 B IT 1046053B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor device
- transistor structures
- complementary type
- device presenting
- manufacturing itself
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7408110A NL7408110A (en) | 1974-06-18 | 1974-06-18 | SEMICONDUCTOR DEVICE WITH COMPLEMENTARY TRANSISTOR STRUCTURES AND METHOD FOR MANUFACTURE THEREOF. |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1046053B true IT1046053B (en) | 1980-06-30 |
Family
ID=19821569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT24362/75A IT1046053B (en) | 1974-06-18 | 1975-06-13 | SEMICONDUCTOR DEVICE PRESENTING TRANSISTOR STRUCTURES OF A COMPLEMENTARY TYPE AND METHOD OF MANUFACTURING ITSELF |
Country Status (13)
Country | Link |
---|---|
JP (1) | JPS5112778A (en) |
AU (1) | AU499052B2 (en) |
BE (1) | BE830286A (en) |
BR (1) | BR7503777A (en) |
CA (1) | CA1029134A (en) |
CH (1) | CH588166A5 (en) |
DE (1) | DE2525529B2 (en) |
ES (1) | ES438593A1 (en) |
FR (1) | FR2275884A1 (en) |
GB (1) | GB1505103A (en) |
IT (1) | IT1046053B (en) |
NL (1) | NL7408110A (en) |
SE (1) | SE407996B (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7710164A (en) * | 1977-09-16 | 1979-03-20 | Philips Nv | METHOD OF TREATING A SINGLE CRYSTAL LINE BODY. |
US4159915A (en) * | 1977-10-25 | 1979-07-03 | International Business Machines Corporation | Method for fabrication vertical NPN and PNP structures utilizing ion-implantation |
US4232328A (en) * | 1978-12-20 | 1980-11-04 | Bell Telephone Laboratories, Incorporated | Dielectrically-isolated integrated circuit complementary transistors for high voltage use |
GB2060252B (en) * | 1979-09-17 | 1984-02-22 | Nippon Telegraph & Telephone | Mutually isolated complementary semiconductor elements |
JPS57204898A (en) * | 1981-06-02 | 1982-12-15 | Saito Masayasu | Pump for vessel for dividing liquid little by little |
JP2531824Y2 (en) * | 1987-02-13 | 1997-04-09 | 株式会社 神崎高級工機製作所 | Hydraulic clutch type transmission |
JPS63142451U (en) * | 1987-03-12 | 1988-09-20 | ||
US5070382A (en) * | 1989-08-18 | 1991-12-03 | Motorola, Inc. | Semiconductor structure for high power integrated circuits |
US7076124B2 (en) * | 2002-12-20 | 2006-07-11 | Avago Technologies, Ltd. | Integrated multichannel laser driver and photodetector receiver |
-
1974
- 1974-06-18 NL NL7408110A patent/NL7408110A/en not_active Application Discontinuation
-
1975
- 1975-05-21 GB GB21807/75A patent/GB1505103A/en not_active Expired
- 1975-06-07 DE DE19752525529 patent/DE2525529B2/en not_active Withdrawn
- 1975-06-11 CA CA229,060A patent/CA1029134A/en not_active Expired
- 1975-06-13 CH CH771075A patent/CH588166A5/xx not_active IP Right Cessation
- 1975-06-13 IT IT24362/75A patent/IT1046053B/en active
- 1975-06-16 SE SE7506878A patent/SE407996B/en unknown
- 1975-06-16 ES ES438593A patent/ES438593A1/en not_active Expired
- 1975-06-16 BR BR4859/75A patent/BR7503777A/en unknown
- 1975-06-16 BE BE157368A patent/BE830286A/en unknown
- 1975-06-16 JP JP50072123A patent/JPS5112778A/en active Granted
- 1975-06-17 AU AU82149/75A patent/AU499052B2/en not_active Expired
- 1975-06-18 FR FR7519105A patent/FR2275884A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
DE2525529A1 (en) | 1976-01-08 |
FR2275884A1 (en) | 1976-01-16 |
JPS5247319B2 (en) | 1977-12-01 |
CA1029134A (en) | 1978-04-04 |
SE7506878L (en) | 1975-12-19 |
CH588166A5 (en) | 1977-05-31 |
FR2275884B1 (en) | 1980-10-24 |
NL7408110A (en) | 1975-12-22 |
BR7503777A (en) | 1976-07-06 |
JPS5112778A (en) | 1976-01-31 |
AU8214975A (en) | 1976-12-23 |
ES438593A1 (en) | 1977-01-16 |
SE407996B (en) | 1979-04-30 |
AU499052B2 (en) | 1979-04-05 |
DE2525529B2 (en) | 1977-08-04 |
GB1505103A (en) | 1978-03-22 |
BE830286A (en) | 1975-12-16 |
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