ES393040A1 - Semiconductor integrated devices - Google Patents
Semiconductor integrated devicesInfo
- Publication number
- ES393040A1 ES393040A1 ES393040A ES393040A ES393040A1 ES 393040 A1 ES393040 A1 ES 393040A1 ES 393040 A ES393040 A ES 393040A ES 393040 A ES393040 A ES 393040A ES 393040 A1 ES393040 A1 ES 393040A1
- Authority
- ES
- Spain
- Prior art keywords
- adjacent
- layer
- design
- main surface
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 238000000926 separation method Methods 0.000 abstract 2
- 239000011810 insulating material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
Abstract
A semiconductor device comprising a semiconductor body with a transistor, a design of an insulating material that is inserted into the semiconductor body and extends from a main surface of the semiconductor body, in said body, at least part of its thickness, having the semiconductor body a first layer-like part that is adjacent to the main surface and that, along its entire circumference and throughout its thickness, is adjacent to a first part of the design inserted in said layer-like part, the base zone of the transistor is adjacent to the main surface and, along its entire circumference, is adjacent to the first part of the design, the emitter zone of the transistor being arranged in the base zone next to the main surface, and the collector zone comprising a part that is present below the base zone, characterized in that the semiconductor body comprises a second layer-like part located on the lad or from and separated from the first part as a layer, said second part being as a layer adjacent to the main surface and adjacent, along at least part of its circumference and throughout its thickness, to a second part of the design that is formed, simultaneously with the first part of the design, said second part as a layer comprising a part of the collector area called the connection part of the collector area, adjacent to the main surface, the connection part of which is separated of the first part as a layer only on one part, called the separation part, which belongs to at least one of said two parts of the design, said connection part being interconnected and the part of the collector area that is under the base zone, by an interconnection part of the collector zone present, at least partially, under the separation part. (Machine-translation by Google Translate, not legally binding)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7010208A NL7010208A (en) | 1966-10-05 | 1970-07-10 | |
NLAANVRAGE7010204,A NL170902C (en) | 1970-07-10 | 1970-07-10 | SEMICONDUCTOR DEVICE, IN PARTICULAR MONOLITHICALLY INTEGRATED SEMICONDUCTOR CIRCUIT. |
NLAANVRAGE7010205,A NL169936C (en) | 1970-07-10 | 1970-07-10 | SEMI-CONDUCTOR DEVICE CONTAINING A SEMI-CONDUCTOR BODY WITH AN OXYDE PATTERN SATURATED AT LEAST IN PART IN THE SEMI-CONDUCTOR BODY. |
Publications (1)
Publication Number | Publication Date |
---|---|
ES393040A1 true ES393040A1 (en) | 1974-05-16 |
Family
ID=27351584
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES393040A Expired ES393040A1 (en) | 1970-07-10 | 1971-07-08 | Semiconductor integrated devices |
ES393041A Expired ES393041A1 (en) | 1970-07-10 | 1971-07-08 | Semiconductor integrated devices |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES393041A Expired ES393041A1 (en) | 1970-07-10 | 1971-07-08 | Semiconductor integrated devices |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS517550B1 (en) |
BE (1) | BE769735A (en) |
CA (1) | CA1102012A (en) |
CH (1) | CH533364A (en) |
DE (1) | DE2133982C2 (en) |
ES (2) | ES393040A1 (en) |
GB (1) | GB1353997A (en) |
HK (1) | HK58576A (en) |
SE (1) | SE368480B (en) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1095413A (en) * | 1964-12-24 |
-
1971
- 1971-07-07 CA CA117,581A patent/CA1102012A/en not_active Expired
- 1971-07-07 GB GB3184571A patent/GB1353997A/en not_active Expired
- 1971-07-07 CH CH1000771A patent/CH533364A/en not_active IP Right Cessation
- 1971-07-07 SE SE880571A patent/SE368480B/xx unknown
- 1971-07-08 ES ES393040A patent/ES393040A1/en not_active Expired
- 1971-07-08 BE BE769735A patent/BE769735A/en unknown
- 1971-07-08 ES ES393041A patent/ES393041A1/en not_active Expired
- 1971-07-08 DE DE19712133982 patent/DE2133982C2/en not_active Expired
- 1971-07-10 JP JP5073171A patent/JPS517550B1/ja active Pending
-
1976
- 1976-09-23 HK HK58576A patent/HK58576A/en unknown
Also Published As
Publication number | Publication date |
---|---|
BE769735A (en) | 1972-01-10 |
CH533364A (en) | 1973-01-31 |
JPS517550B1 (en) | 1976-03-09 |
ES393041A1 (en) | 1975-05-16 |
SE368480B (en) | 1974-07-01 |
DE2133982C2 (en) | 1984-12-13 |
DE2133982A1 (en) | 1972-01-13 |
HK58576A (en) | 1976-10-01 |
CA1102012A (en) | 1981-05-26 |
GB1353997A (en) | 1974-05-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NL188608B (en) | INTEGRATED SEMICONDUCTOR CIRCUIT. | |
IL39277A (en) | Mos integrated circuit with selectively formed resistivity regions | |
CH534430A (en) | Monolithic semiconductor device comprising at least two electroluminescent elements | |
ES397739A1 (en) | Junction isolated integrated circuit resistor with crystal damage near isolation junction | |
ES328172A1 (en) | A composite semiconductor device. (Machine-translation by Google Translate, not legally binding) | |
ES421881A1 (en) | Semiconductor devices | |
ES438593A1 (en) | Semiconductor device having complementary transistors and method of manufacturing same | |
ES323139A1 (en) | A solid state semiconductor device. (Machine-translation by Google Translate, not legally binding) | |
ES329618A1 (en) | A method of manufacturing a transistor. (Machine-translation by Google Translate, not legally binding) | |
NL160433B (en) | PROCEDURE FOR THE MANUFACTURE OF AN INTEGRATED SEMI-CONDUCTOR CIRCUIT EQUIPPED WITH AT LEAST ONE FIRST AND A SECOND TRANSISTOR OF THE SAME TYPE, WHERE THE FIRST TRANSISTOR HAS A LARGE AMPLIFYING FACTOR. | |
ES402165A1 (en) | Monolithic semiconductor device | |
ES393040A1 (en) | Semiconductor integrated devices | |
ES374056A1 (en) | Barrier layer devices and methods for their manufacture | |
NL177636C (en) | INTEGRATED SEMICONDUCTOR MEMORY CIRCUIT WITH SCHOTTKY DIODS. | |
GB1228238A (en) | ||
ES352147A1 (en) | Integrated circuit having matched complementary transistors | |
ATA593771A (en) | SEMI-CONDUCTOR ARRANGEMENT, IN PARTICULAR MONOLITHIC INTEGRATED CIRCUIT, WITH SEMI-CONDUCTOR ISLANDS ISOLATED FROM EACH OTHER | |
ES392398A1 (en) | Semiconductor devices | |
ES401687A1 (en) | Semiconductor device manufacture | |
ES329228A1 (en) | A transistor device. (Machine-translation by Google Translate, not legally binding) | |
ES368826A1 (en) | Epitaxial transistor with limited area buried layer and lifetimekillers | |
ES433346A1 (en) | Semiconductor device. (Machine-translation by Google Translate, not legally binding) | |
ES392400A1 (en) | A semiconductor device. (Machine-translation by Google Translate, not legally binding) | |
ES377824A1 (en) | A semiconductor device. (Machine-translation by Google Translate, not legally binding) | |
ES135634U (en) | Interviews for cuellos and similar. (Machine-translation by Google Translate, not legally binding) |