ES392400A1 - A semiconductor device. (Machine-translation by Google Translate, not legally binding) - Google Patents
A semiconductor device. (Machine-translation by Google Translate, not legally binding)Info
- Publication number
- ES392400A1 ES392400A1 ES392400A ES392400A ES392400A1 ES 392400 A1 ES392400 A1 ES 392400A1 ES 392400 A ES392400 A ES 392400A ES 392400 A ES392400 A ES 392400A ES 392400 A1 ES392400 A1 ES 392400A1
- Authority
- ES
- Spain
- Prior art keywords
- zone
- transistor
- zones
- semiconductor
- translation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Abstract
A semiconductor device comprising a semiconductor body in which the semiconductor zones of at least one first and second transistors, separated from each other by said transistors, are extended by means of an isolation zone; the semiconductor body having an essentially flat surface; both the first transistor and the second comprising at least one group of three successive semiconductor zones of alternating conductivity types, adjacent to said surface; the second zone extending from both groups of three zones, viewed from the surface, down to below the first zone, and extending the third zone to below the second zone; and the corresponding zones of the two groups being of the same type of conductivity; said device characterized in that the second zone of the first transistor comprises, in addition to the present part in intermediate position between the first zone and the third of said transistor, a part in the form of a cup that is joined or linked to said intermediate part, as a consequence of which the second zone mentioned above essentially completely surrounds the third zone of the first transistor in the semiconductor body and forms the isolation zone which, together with the third zone of the second transistor, constitutes an insulating pn junction essentially surrounding the first transistor. (Machine-translation by Google Translate, not legally binding)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7009089A NL7009089A (en) | 1970-06-20 | 1970-06-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES392400A1 true ES392400A1 (en) | 1974-09-01 |
Family
ID=19810385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES392400A Expired ES392400A1 (en) | 1970-06-20 | 1971-06-18 | A semiconductor device. (Machine-translation by Google Translate, not legally binding) |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5124344B1 (en) |
ES (1) | ES392400A1 (en) |
-
1971
- 1971-06-17 JP JP4299971A patent/JPS5124344B1/ja active Pending
- 1971-06-18 ES ES392400A patent/ES392400A1/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5124344B1 (en) | 1976-07-23 |
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