JPS56157054A - Manufacture of semiconductor ic - Google Patents
Manufacture of semiconductor icInfo
- Publication number
- JPS56157054A JPS56157054A JP5991780A JP5991780A JPS56157054A JP S56157054 A JPS56157054 A JP S56157054A JP 5991780 A JP5991780 A JP 5991780A JP 5991780 A JP5991780 A JP 5991780A JP S56157054 A JPS56157054 A JP S56157054A
- Authority
- JP
- Japan
- Prior art keywords
- region
- withstand voltage
- diffused
- high withstand
- iil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To increase a backward current mu-factor of IIL element without decreasing a withstand voltage of a high withstand voltage element by a method wherein the base region junction depths of the high withstand voltage element and the IIL element are made different from each other. CONSTITUTION:A buried N<+>-diffused region 22 is formed on the surface of a P type semiconductor substrate 21, and an N<-> layer 23 is grown by a vapor growth method on the region 22. Then, a buried N<->-diffused region 24 is formed and further, an N<-> layer 25 is formed by the vapor growth. A P<+>-isolation diffused region 27 is diffused until reaching the P type semiconductor substrate 1. Subsequently, the base region 30 of the high withstand voltage element is formed by diffusion simultaneously with an injector region 28 and base region 29 of the IIL element by a long time heat treatment and diffused deeply. Then, N<+>-regin 32 for taking out a collector electrode, emitter N<+>-region 31 of the high withstand voltage element, an N<+>-region 34 for taking out earth electrode, and collector N<+>-region 33 of the IIL element are formed by the same diffusion. Thereby, the high withstand voltage analog element and the IIL element are simultaneously formed on the same substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5991780A JPS56157054A (en) | 1980-05-08 | 1980-05-08 | Manufacture of semiconductor ic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5991780A JPS56157054A (en) | 1980-05-08 | 1980-05-08 | Manufacture of semiconductor ic |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56157054A true JPS56157054A (en) | 1981-12-04 |
Family
ID=13126956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5991780A Pending JPS56157054A (en) | 1980-05-08 | 1980-05-08 | Manufacture of semiconductor ic |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56157054A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5161786A (en) * | 1974-11-27 | 1976-05-28 | Hitachi Ltd | |
| JPS5263080A (en) * | 1975-11-18 | 1977-05-25 | Matsushita Electric Ind Co Ltd | Production of semiconductor integrated circuit device |
| JPS52154383A (en) * | 1976-06-18 | 1977-12-22 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPS5343484A (en) * | 1976-10-01 | 1978-04-19 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPS5413279A (en) * | 1977-07-01 | 1979-01-31 | Hitachi Ltd | Manufacture for semiconductor integrated circuit device |
-
1980
- 1980-05-08 JP JP5991780A patent/JPS56157054A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5161786A (en) * | 1974-11-27 | 1976-05-28 | Hitachi Ltd | |
| JPS5263080A (en) * | 1975-11-18 | 1977-05-25 | Matsushita Electric Ind Co Ltd | Production of semiconductor integrated circuit device |
| JPS52154383A (en) * | 1976-06-18 | 1977-12-22 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPS5343484A (en) * | 1976-10-01 | 1978-04-19 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPS5413279A (en) * | 1977-07-01 | 1979-01-31 | Hitachi Ltd | Manufacture for semiconductor integrated circuit device |
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