GB1514697A - Testing semiconductor wafers - Google Patents

Testing semiconductor wafers

Info

Publication number
GB1514697A
GB1514697A GB782177A GB782177A GB1514697A GB 1514697 A GB1514697 A GB 1514697A GB 782177 A GB782177 A GB 782177A GB 782177 A GB782177 A GB 782177A GB 1514697 A GB1514697 A GB 1514697A
Authority
GB
United Kingdom
Prior art keywords
wafer
semi
defects
acid
pits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB782177A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1514697A publication Critical patent/GB1514697A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2637—Circuits therefor for testing other individual devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Weting (AREA)

Abstract

1514697 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 24 Feb 1977 [15 March 1976] 07821/77 Heading H1K An intermediate step during the manufacture of semi-conductor devices comprises testing a semi-conductor wafer 1 including a surfaceadjacent N-type region 15, for defects, by contacting the region 15 with a weak H.F. acid solution 6 and applying a potential between the acid 6 and the wafer 1 to form a depletion region below the surface of the wafer 1, within which defects 16 lead to the formation of etched pits 17 in the surface and without the surface as a whole being etched, and the pits 17 being examined optically to determine whether their location and density is such as to justify proceeding with subsequent manufacturing steps. The concentration of the acid in the solution is less than 15% by volume. The wafer 1 may be Si and it may include bipolar transistors. The applied potential is sufficiently low that the depletion region extends only to the base-collector junction so that defects below that junction, which are inconsequential, do not give rise to etched pits.
GB782177A 1976-03-15 1977-02-24 Testing semiconductor wafers Expired GB1514697A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US66723276A 1976-03-15 1976-03-15

Publications (1)

Publication Number Publication Date
GB1514697A true GB1514697A (en) 1978-06-21

Family

ID=24677379

Family Applications (1)

Application Number Title Priority Date Filing Date
GB782177A Expired GB1514697A (en) 1976-03-15 1977-02-24 Testing semiconductor wafers

Country Status (6)

Country Link
JP (1) JPS52111373A (en)
CA (1) CA1069221A (en)
DE (1) DE2707372C2 (en)
FR (1) FR2344847A1 (en)
GB (1) GB1514697A (en)
IT (1) IT1118013B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5010294A (en) * 1989-05-31 1991-04-23 Siemens Aktiengesellschaft Method for topically-resolved determination of the diffusion length of minority charge carriers in a semiconductor crystal body with the assistance of an electrolytic cell
US5130643A (en) * 1989-05-31 1992-07-14 Siemens Aktiengesellschaft Method for determining the recombination rate of minority carriers at boundary surfaces between semiconductors and other substances
US5209833A (en) * 1989-05-31 1993-05-11 Siemens Aktiengesellschaft Method and apparatus for large-area electrical contacting of a semiconductor crystal body with the assistance of electrolytes
DE4328083A1 (en) * 1993-08-20 1994-03-31 Ignaz Eisele Microscopic measuring of surface topography and potential distribution - laterally displacing field effect structure relative to scanned surface

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2532760A1 (en) * 1982-09-08 1984-03-09 Comp Generale Electricite METHOD AND DEVICE FOR OBTAINING PHYSICAL CHARACTERISTICS OF A SEMICONDUCTOR MATERIAL
JPS6066920A (en) * 1983-09-22 1985-04-17 北興化工機株式会社 Conveyable silage vessel
JP4916249B2 (en) * 2006-08-10 2012-04-11 新電元工業株式会社 Inspection method of semiconductor substrate

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3655540A (en) * 1970-06-22 1972-04-11 Bell Telephone Labor Inc Method of making semiconductor device components
US3902979A (en) * 1974-06-24 1975-09-02 Westinghouse Electric Corp Insulator substrate with a thin mono-crystalline semiconductive layer and method of fabrication

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5010294A (en) * 1989-05-31 1991-04-23 Siemens Aktiengesellschaft Method for topically-resolved determination of the diffusion length of minority charge carriers in a semiconductor crystal body with the assistance of an electrolytic cell
US5130643A (en) * 1989-05-31 1992-07-14 Siemens Aktiengesellschaft Method for determining the recombination rate of minority carriers at boundary surfaces between semiconductors and other substances
US5209833A (en) * 1989-05-31 1993-05-11 Siemens Aktiengesellschaft Method and apparatus for large-area electrical contacting of a semiconductor crystal body with the assistance of electrolytes
DE4328083A1 (en) * 1993-08-20 1994-03-31 Ignaz Eisele Microscopic measuring of surface topography and potential distribution - laterally displacing field effect structure relative to scanned surface

Also Published As

Publication number Publication date
FR2344847A1 (en) 1977-10-14
DE2707372C2 (en) 1985-08-22
JPS52111373A (en) 1977-09-19
IT1118013B (en) 1986-02-24
FR2344847B1 (en) 1979-09-28
CA1069221A (en) 1980-01-01
DE2707372A1 (en) 1977-09-22
JPS5320380B2 (en) 1978-06-26

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee