JPS52111373A - Method of testing electrooactive defects in semiconductor substrates - Google Patents

Method of testing electrooactive defects in semiconductor substrates

Info

Publication number
JPS52111373A
JPS52111373A JP1940477A JP1940477A JPS52111373A JP S52111373 A JPS52111373 A JP S52111373A JP 1940477 A JP1940477 A JP 1940477A JP 1940477 A JP1940477 A JP 1940477A JP S52111373 A JPS52111373 A JP S52111373A
Authority
JP
Japan
Prior art keywords
electrooactive
defects
testing
semiconductor substrates
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1940477A
Other languages
Japanese (ja)
Other versions
JPS5320380B2 (en
Inventor
Ruisu Deinzu Jiyon
Robaato Poponiaku Mikaeru
Otsutoo Shiyuenkaa Robaato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS52111373A publication Critical patent/JPS52111373A/en
Publication of JPS5320380B2 publication Critical patent/JPS5320380B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2637—Circuits therefor for testing other individual devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Weting (AREA)
JP1940477A 1976-03-15 1977-02-25 Method of testing electrooactive defects in semiconductor substrates Granted JPS52111373A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US66723276A 1976-03-15 1976-03-15

Publications (2)

Publication Number Publication Date
JPS52111373A true JPS52111373A (en) 1977-09-19
JPS5320380B2 JPS5320380B2 (en) 1978-06-26

Family

ID=24677379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1940477A Granted JPS52111373A (en) 1976-03-15 1977-02-25 Method of testing electrooactive defects in semiconductor substrates

Country Status (6)

Country Link
JP (1) JPS52111373A (en)
CA (1) CA1069221A (en)
DE (1) DE2707372C2 (en)
FR (1) FR2344847A1 (en)
GB (1) GB1514697A (en)
IT (1) IT1118013B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008042133A (en) * 2006-08-10 2008-02-21 Shindengen Electric Mfg Co Ltd Inspection method of semiconductor substrate

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2532760A1 (en) * 1982-09-08 1984-03-09 Comp Generale Electricite METHOD AND DEVICE FOR OBTAINING PHYSICAL CHARACTERISTICS OF A SEMICONDUCTOR MATERIAL
JPS6066920A (en) * 1983-09-22 1985-04-17 北興化工機株式会社 Conveyable silage vessel
DE59006874D1 (en) * 1989-05-31 1994-09-29 Siemens Ag Method for determining the recombination rate of minority carriers at interfaces between semiconductors and other substances.
DE3917702A1 (en) * 1989-05-31 1990-12-06 Siemens Ag METHOD FOR DETERMINING THE DIFFERENTIAL LENGTH OF MINORITY CHARGE CARRIERS IN A SEMICONDUCTOR CRYSTAL BODY BY MEANS OF AN ELECTROLYTIC CELL
DE59010140D1 (en) * 1989-05-31 1996-03-28 Siemens Ag Method for large-area electrical contacting of a semiconductor crystal body with the help of electrolytes
DE4328083A1 (en) * 1993-08-20 1994-03-31 Ignaz Eisele Microscopic measuring of surface topography and potential distribution - laterally displacing field effect structure relative to scanned surface

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3655540A (en) * 1970-06-22 1972-04-11 Bell Telephone Labor Inc Method of making semiconductor device components
US3902979A (en) * 1974-06-24 1975-09-02 Westinghouse Electric Corp Insulator substrate with a thin mono-crystalline semiconductive layer and method of fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008042133A (en) * 2006-08-10 2008-02-21 Shindengen Electric Mfg Co Ltd Inspection method of semiconductor substrate

Also Published As

Publication number Publication date
DE2707372C2 (en) 1985-08-22
FR2344847A1 (en) 1977-10-14
DE2707372A1 (en) 1977-09-22
GB1514697A (en) 1978-06-21
JPS5320380B2 (en) 1978-06-26
CA1069221A (en) 1980-01-01
IT1118013B (en) 1986-02-24
FR2344847B1 (en) 1979-09-28

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