JPS55111159A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS55111159A
JPS55111159A JP1890579A JP1890579A JPS55111159A JP S55111159 A JPS55111159 A JP S55111159A JP 1890579 A JP1890579 A JP 1890579A JP 1890579 A JP1890579 A JP 1890579A JP S55111159 A JPS55111159 A JP S55111159A
Authority
JP
Japan
Prior art keywords
type
layer
transistors
layers
type layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1890579A
Other languages
Japanese (ja)
Inventor
Hiroshi Kamijo
Masaru Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP1890579A priority Critical patent/JPS55111159A/en
Publication of JPS55111159A publication Critical patent/JPS55111159A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To raise the current amplification of vertical transistors and the switching speed of horizontal transistors, by connecting the base-emitter junctions of an I<2>L device to its emitter regions of high impurity concentration through prescribed regions of high impurity concentration. CONSTITUTION:An n<+>-type embedded layer 2 is provided on a p-type Si substrate 1. An n-type layer 31 is grown on the layer 2 so that the thickness of the layer 31 is less than the distance between the emitter regions of horizontal pnp-transistors to be provided on the layer 31 and p-type layers to be the base regions of vertical npn- transistors. n<+>-Type layers 11, 12 are provided on the n-type layer 31. Another n- type layer 32 is thereafter grown. The p-type layers 4, 5 are then produced by selective diffusion. In these processes, the impurity of the n<+>-type layers 2, 11, 12 diffuse so that the n<+>-type layers 11 connect the n<+>-type layer 2 and the p-type layer 5 to each other. n<+>-Type layers 6 of high concentration are provided just over the n<+>- type layers 11 and an n<+>-type layer 7 is provided just over the n<+>-type layer 12 so that an I<2>L device is formed. This results in raising the current amplification factor of the vertical transistors and the switching speed of the horizontal transistors.
JP1890579A 1979-02-20 1979-02-20 Semiconductor integrated circuit Pending JPS55111159A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1890579A JPS55111159A (en) 1979-02-20 1979-02-20 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1890579A JPS55111159A (en) 1979-02-20 1979-02-20 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS55111159A true JPS55111159A (en) 1980-08-27

Family

ID=11984603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1890579A Pending JPS55111159A (en) 1979-02-20 1979-02-20 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS55111159A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS517885A (en) * 1974-07-09 1976-01-22 Tokyo Shibaura Electric Co
JPS5132285A (en) * 1974-09-13 1976-03-18 Hitachi Ltd
JPS5182577A (en) * 1974-12-27 1976-07-20 Tokyo Shibaura Electric Co
JPS51107779A (en) * 1975-02-19 1976-09-24 Siemens Ag
JPS51139283A (en) * 1975-05-28 1976-12-01 Hitachi Ltd Semi-conductor device
JPS52135278A (en) * 1976-05-07 1977-11-12 Toshiba Corp Semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS517885A (en) * 1974-07-09 1976-01-22 Tokyo Shibaura Electric Co
JPS5132285A (en) * 1974-09-13 1976-03-18 Hitachi Ltd
JPS5182577A (en) * 1974-12-27 1976-07-20 Tokyo Shibaura Electric Co
JPS51107779A (en) * 1975-02-19 1976-09-24 Siemens Ag
JPS51139283A (en) * 1975-05-28 1976-12-01 Hitachi Ltd Semi-conductor device
JPS52135278A (en) * 1976-05-07 1977-11-12 Toshiba Corp Semiconductor device

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