JPS55111157A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS55111157A
JPS55111157A JP1820779A JP1820779A JPS55111157A JP S55111157 A JPS55111157 A JP S55111157A JP 1820779 A JP1820779 A JP 1820779A JP 1820779 A JP1820779 A JP 1820779A JP S55111157 A JPS55111157 A JP S55111157A
Authority
JP
Japan
Prior art keywords
layers
type
vertical transistors
layer
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1820779A
Other languages
Japanese (ja)
Inventor
Masaru Okumura
Hiroshi Kamijo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP1820779A priority Critical patent/JPS55111157A/en
Publication of JPS55111157A publication Critical patent/JPS55111157A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce an ineffective base current and effectively increase the current amplification factor of vertical transistors of an I<2>L device, by providing a prescribed layer of high impurity concentration, only under the collector region of the vertical transistors. CONSTITUTION:An n-type embedded layer 32 and an n-type epitaxial layer 33 are provided on a p-type Si substrate 31. Windows are opened, only under portions to be the collector regions of vertical transistors. n<+>-Type embedded layers 34 of higher impurity concentration than the n-type layer 33 are produced by diffusion. An epitaxial layer 35 is produced on the embedded layers 34. At that time, the layers 35, 33 so that layers penetrating emitter-base junctions are provided. An emitter region 36 and a collector region 37 are then produced. Since the high-concentration n<+>-type layers 34 are present only on base-emitter junction portions facing the collector regions 38 of the vertical transistors of an I<2>L device, base currents flow through the layers 34. This results in reducing an ineffective current and increasing the current amplification factor.
JP1820779A 1979-02-19 1979-02-19 Semiconductor integrated circuit device Pending JPS55111157A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1820779A JPS55111157A (en) 1979-02-19 1979-02-19 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1820779A JPS55111157A (en) 1979-02-19 1979-02-19 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS55111157A true JPS55111157A (en) 1980-08-27

Family

ID=11965193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1820779A Pending JPS55111157A (en) 1979-02-19 1979-02-19 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS55111157A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS517885A (en) * 1974-07-09 1976-01-22 Tokyo Shibaura Electric Co
JPS5150585A (en) * 1974-10-30 1976-05-04 Tokyo Shibaura Electric Co
JPS5183479A (en) * 1975-01-20 1976-07-22 Tokyo Shibaura Electric Co

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS517885A (en) * 1974-07-09 1976-01-22 Tokyo Shibaura Electric Co
JPS5150585A (en) * 1974-10-30 1976-05-04 Tokyo Shibaura Electric Co
JPS5183479A (en) * 1975-01-20 1976-07-22 Tokyo Shibaura Electric Co

Similar Documents

Publication Publication Date Title
GB1522958A (en) Fabrication of semiconductor devices
JPS56124273A (en) Semiconductor device
GB1073551A (en) Integrated circuit comprising a diode and method of making the same
GB1169188A (en) Method of Manufacturing Semiconductor Devices
JPS645070A (en) Vertical insulated gate field effect transistor
JPS55165669A (en) Bipolar-mos device
JPS55111157A (en) Semiconductor integrated circuit device
JPS56108255A (en) Semiconductor integrated circuit
JPS567472A (en) Semiconductor device
JPS55107261A (en) Semiconductor integrated circuit device
JPS55158663A (en) Transistor
JPS5538080A (en) Semiconductor device
JPS55111159A (en) Semiconductor integrated circuit
JPS54126478A (en) Transistor
JPS5533007A (en) Semiconductor intergated circuit
JPS5561062A (en) Schottky barrier diode built-in transistor
JPS55102263A (en) Semiconductor integrated circuit
JPS6431452A (en) Semiconductor integrated circuit containing current mirror
JPS55165673A (en) Semiconductor device
JPS5617055A (en) Semiconductor integrated circuit device and manufacture thereof
JPS54142080A (en) Semiconductor device
GB1414066A (en) Junction transistors
JPS5710968A (en) Semiconductor device
JPS55145364A (en) Semiconductor integrated circuit device
JPS5735366A (en) Semiconductor integrated circuit device