JPS5526625A - Method of producing resistance film - Google Patents

Method of producing resistance film

Info

Publication number
JPS5526625A
JPS5526625A JP9882678A JP9882678A JPS5526625A JP S5526625 A JPS5526625 A JP S5526625A JP 9882678 A JP9882678 A JP 9882678A JP 9882678 A JP9882678 A JP 9882678A JP S5526625 A JPS5526625 A JP S5526625A
Authority
JP
Japan
Prior art keywords
specific resistance
content
layer
level
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9882678A
Other languages
Japanese (ja)
Inventor
Hisayoshi Yamoto
Norikazu Ouchi
Hisao Hayashi
Takeshi Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP9882678A priority Critical patent/JPS5526625A/en
Priority to CA000333370A priority patent/CA1136773A/en
Priority to US06/065,262 priority patent/US4302763A/en
Priority to GB7928105A priority patent/GB2029096B/en
Priority to FR7920711A priority patent/FR2435127A1/en
Priority to DE19792932976 priority patent/DE2932976A1/en
Publication of JPS5526625A publication Critical patent/JPS5526625A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To remarkable increase the breakdown strength of element by changing the 0 content in an Si layer while maintaining the impurity concentration in the latter at a level near the saturation point so as to control the specific resistance in the composite layer and setting the specific resistance at a level within a predetermined level. CONSTITUTION:A resistance layer 12 of a composite material mainly consisting of Si and containing predetermined amounts of O and P is formed on the emitter layer 11 of a transistor formed by an ordinary process. The specific resistance of this resistance layer is controlled to fall within the region of between 0.1 and 100OMEGAcm. To this end, an Si substrate after a diffusion treatment is heated in a reaction furnace and SiH4,N2O,PH3 are introduced making use of N2 as a carrier. In consequence, poly Si containing P uniformly grows on the substrate and, at the same time, O is uniformly added as a result of oxidation of N2O. The amount of PH3 is selected to be large enough to maintain the P content at a level near the saturation point. The O content and P content are maintained, respectively, at 10 to 50 at% and 0.1 to 3at%. The subatrate is then annealed in N2 atmosphere. The specific resistance can be precisely controlled within the range of between 0.1 and 0.01OMEGAcm by changing the flow rate of N2O while maintaining the other factors constant, although the value of specific resistance varies depending on the annealing temperature, so that the breakdown of the element is fairly avoided.
JP9882678A 1978-08-14 1978-08-14 Method of producing resistance film Pending JPS5526625A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP9882678A JPS5526625A (en) 1978-08-14 1978-08-14 Method of producing resistance film
CA000333370A CA1136773A (en) 1978-08-14 1979-08-08 Semiconductor device
US06/065,262 US4302763A (en) 1978-08-14 1979-08-09 Semiconductor device
GB7928105A GB2029096B (en) 1978-08-14 1979-08-13 Semiconductor devices
FR7920711A FR2435127A1 (en) 1978-08-14 1979-08-14 SEMICONDUCTOR COMPONENT, IN PARTICULAR BIPOLAR HETEROGENEOUS JUNCTION TRANSISTOR
DE19792932976 DE2932976A1 (en) 1978-08-14 1979-08-14 SEMICONDUCTOR COMPONENT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9882678A JPS5526625A (en) 1978-08-14 1978-08-14 Method of producing resistance film

Publications (1)

Publication Number Publication Date
JPS5526625A true JPS5526625A (en) 1980-02-26

Family

ID=14230090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9882678A Pending JPS5526625A (en) 1978-08-14 1978-08-14 Method of producing resistance film

Country Status (1)

Country Link
JP (1) JPS5526625A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049970A (en) * 1987-11-17 1991-09-17 Sharp Kabushiki Kaisha High resistive element
US6608659B1 (en) 1998-09-21 2003-08-19 Matsushita Electric Industrial Co., Ltd. Reflective liquid crystal display apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049970A (en) * 1987-11-17 1991-09-17 Sharp Kabushiki Kaisha High resistive element
US6608659B1 (en) 1998-09-21 2003-08-19 Matsushita Electric Industrial Co., Ltd. Reflective liquid crystal display apparatus

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